Hydrogen for polycrystalline silicon production, impurity removal method and system, and polycrystalline silicon production method and system

A polysilicon and hydrogen technology is applied in the polysilicon production method and system, the impurity removal method and system, and the field of hydrogen for polysilicon production, which can solve the problems of affecting quality and limited cooling water removal efficiency.

Pending Publication Date: 2021-08-31
INNER MONGOLIA XINTE SILICON MATERIAL CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the efficiency of cooling water removal is limited, and only part of the water in hydrogen can be removed
When using solid adsorb...

Method used

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  • Hydrogen for polycrystalline silicon production, impurity removal method and system, and polycrystalline silicon production method and system

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Embodiment 1

[0054] The present embodiment provides a polycrystalline silicon production method of hydrogen impurity, comprising the steps of:

[0055] The polysilicon production of trichlorosilane with hydrogen gas into boiling, so that the internal trap the hydrogen reacts with silicon trichloride, trichlorosilane from escaping in vapor phase under the shower and atomized trichloro hydrogen silicon contact, so the remaining water vapor within the reaction with hydrogen silicon trichloride, in addition to water vapor obtained;

[0056] The water vapor is then condensed in addition to the vaporized hydrogen trichloro therein liquefied silicon, polysilicon production obtained with the hydrogen impurity.

[0057] Hydrogen impurity polysilicon production by using the intermediate product as a desiccant trichlorosilane, trichlorosilane is reacted with hydrogen in the water to form a precipitate, HCl and hydrogen, trichlorosilane and small amounts of HCl gas is introduced vaporized after drying pol...

Embodiment 2

[0070] The present embodiment provides a hydrogen production using polycrystalline silicon produced by the method of Example 1.

Embodiment 3

[0072] The present embodiment provides a method for producing polycrystalline silicon, comprising the steps of:

[0073] To purify polysilicon production method of Example 1 of the embodiment obtained with hydrogen chloride for the synthesis,

[0074] The reaction of silicon powder with hydrogen chloride to trichlorosilane synthesis,

[0075] The trichlorosilane reduced to obtain polycrystalline silicon.

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Abstract

The invention provides hydrogen for polycrystalline silicon production, an impurity removal method and system and a polycrystalline silicon production method and system. The impurity removal method comprises the following steps of introducing hydrogen for polycrystalline silicon production into boiling trichlorosilane to enable part of internal water to react with trichlorosilane; enabling a gas phase escaping from the trichlorosilane to be in contact with sprayed and atomized trichlorosilane so as to enable residual water vapor to react with trichlorosilane to obtain a dewatered gas phase; and condensing the dewatered gas phase to liquefy the vaporized trichlorosilane in the dewatered gas phase so as to obtain the impurity-removed hydrogen for polycrystalline silicon production. According to the invention, on the premise that external impurities are not introduced, the moisture in the hydrogen for polycrystalline silicon production is dried to be less than 1PPm.

Description

Technical field [0001] The present invention relates to a gas purification technology, and more particularly, to a polycrystalline silicon production of hydrogen, cleaning method and system, a method and system for polysilicon production. Background technique [0002] Hydrogen is an important chemical raw materials, is an important fuel, commonly used method for producing hydrogen or hydrogen with a water electrolysis method, Method hydrogen or water gas, regardless of which method is used, prepared to give a hydrogen contains traces of oxygen and water impurities , the presence of impurities seriously affect the quality of hydrogen. [0003] Trichlorosilane feed generation process in the production of polycrystalline silicon, is first synthesized with hydrogen chloride, trichlorosilane synthesized by reaction of hydrogen chloride through silica fume, and the presence of oxygen and moisture can affect the conversion of synthesis trichlorosilane , the operating efficiency of the s...

Claims

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Application Information

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IPC IPC(8): C01B3/52C01B3/50C30B35/00
CPCC01B3/506C01B3/52C01B2203/0415C01B2203/046C01B2203/0495C30B35/007
Inventor 武珠峰吴昌勇宋高杰张治锦刘兴平宋正平潘从伟
Owner INNER MONGOLIA XINTE SILICON MATERIAL CO LTD
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