Photonic crystal microcavity silicon-based laser and preparation method thereof

Abstract

The invention provides a photonic crystal microcavity silicon-based laser and a preparation method thereof. The laser comprises a silicon-based substrate; a III-V group submicron wire and a chirp one-dimensional photonic crystal, wherein the III-V group submicron wire is superposed on the silicon-based substrate, and the chirp one-dimensional photonic crystal is prepared in the III-V group submicron wire to form a photonic crystal microcavity. The preparation method comprises the following steps: depositing a silicon dioxide dielectric layer on a silicon-based substrate, and etching the silicon dioxide dielectric layer and a part of the silicon-based substrate to form at least one communication groove; epitaxially growing III-V group submicron wires in at least one communication groove, polishing the III-V group submicron wires, reserving one III-V group submicron wire, etching the III-V group submicron wires, and preparing the chirp one-dimensional photonic crystal to form the photonic crystal microcavity. The photonic crystal microcavity is introduced, the small-noise low-threshold single-mode electric injection lasing characteristic of the laser can be achieved, and miniaturization of the silicon-based laser is promoted.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a photonic crystal microcavity silicon-based laser and a preparation method thereof. Background technique [0002] The evolution of time is accompanied by the development of technology. Driven by microelectronics integration technology, informatization, networking and intelligence have become the development trend of today's era. However, with the gradual reduction of the feature size of integrated circuits, many new problems have emerged in terms of physical and chemical properties of materials, working principles of components, and reliability of manufacturing processes. Consumption, speed, delay, etc. cannot develop according to people's expectations. Relatively speaking, the optical signal has the advantages of low power consumption, fast speed, small delay, and good anti-interference. At the same time, in order to give full play to the advantages of the silicon-bas...

AI Technical Summary

Problems solved by technology

However, direct heteroepitaxial III-V semiconductor materials on silicon will cause misfit dislocations due to the difference in lattice constant and thermal expansion coefficient between the two, and there will also be antiphase domains caused by the difference in polarity between the two.

At present, the most mature solution is bonding, but this method has its own limitations in terms of yield, size, and compatibility with traditional CMOS processes.

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