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High-temperature current sensor based on low-temperature co-fired ceramic technology and application and method thereof

A technology of low-temperature co-fired ceramics and current sensors, which is applied in the direction of only measuring current, measuring current/voltage, instruments, etc., can solve the problem of low measurement accuracy, and achieve high connection reliability, small accuracy, and low parasitic inductance Effect

Active Publication Date: 2021-09-03
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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AI Technical Summary

Problems solved by technology

In the existing current measurement technology, the semiconductor current mirror and the printed circuit board (PCB) Rogowski coil have the problem of low measurement accuracy in high temperature environment

Method used

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  • High-temperature current sensor based on low-temperature co-fired ceramic technology and application and method thereof
  • High-temperature current sensor based on low-temperature co-fired ceramic technology and application and method thereof
  • High-temperature current sensor based on low-temperature co-fired ceramic technology and application and method thereof

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Embodiment Construction

[0044] The high-temperature current sensor based on low-temperature co-fired ceramic (LTCC) technology of the present invention can be manufactured by punching green ceramic strips, printing conduction strips, and laminating, and then embedding ferrite magnetic rings in it and sintering Handle implementation.

[0045] figure 1 The current measurement principle of the high-temperature current sensor based on the low-temperature co-fired ceramic (LTCC) technology proposed by the present invention—the schematic diagram of electromagnetic induction. The primary side current in the figure i 1 is the current to be measured, the secondary side induced current i 2 That is the output of the current sensor. R 2 is the equivalent resistance of the secondary side, L 1 with L 2 are the inductance of the primary side and the secondary side respectively, and M is the mutual inductance between the primary side and the secondary side. In the secondary circuit, by Kirchhoff's voltage...

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Abstract

The high-temperature current sensor based on the low-temperature co-fired ceramic technology is composed of a plurality of low-temperature co-fired ceramic tape layers, and the high-temperature current sensor is formed by printing conduction bands on the surfaces of the ceramic tape layers and stacking the conduction bands according to a certain sequence. The low-temperature co-fired ceramic tape layer comprises a top cover, a top power connection layer, a top signal connection layer, a ferrite magnetic ring coating layer, a ferrite magnetic ring external vertical connection layer, a ferrite magnetic ring, a ferrite magnetic ring central vertical connection layer, a bottom signal connection layer, a bottom signal collection layer and a bottom substrate layer. The invention provides a high-temperature current sensor based on a low-temperature co-fired ceramic (LTCC) technology and a ferrite magnet ring coil method, current measurement of a power module in a high-temperature environment can be realized, and the high-temperature current sensor has the advantages of accurate measurement, low cost, high usability, easiness in integration and popularization and the like.

Description

technical field [0001] The invention relates to a high-temperature current sensor electronic device, in particular to a high-temperature current sensor based on low-temperature co-fired ceramic technology, and belongs to the field of electronic component design. Background technique [0002] With the development of industries such as electric vehicles, smart grids and aerospace, the application market of power electronic modules has become increasingly broad, and the good development prospects mean that higher requirements are put forward for the application performance of power modules. Because traditional power modules require complex heat dissipation control and cooling systems, the power density and overall efficiency are greatly reduced, and the system cost is significantly increased. Currently, power chips based on next-generation semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are developing rapidly. The excellent performance advantage...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R19/00
CPCG01R19/0092Y02T10/40
Inventor 孙鹏张浩然彭娇阳赵志斌崔翔
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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