Unlock instant, AI-driven research and patent intelligence for your innovation.

High-density multi-mode neural microelectrode array and preparation and integration method thereof

A microelectrode array, high-density technology, applied in microelectronic microstructure devices, televisions, circuits, etc., can solve problems such as poor compatibility, and achieve the effects of improving multi-functional integration, realizing multi-functional integration, and reducing coupling loss.

Pending Publication Date: 2021-09-24
杭州电子科技大学温州研究院有限公司 +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This is mainly due to the poor compatibility between the preparation process of most high-density Michigan microelectrodes and the preparation process of optical waveguides or microfluidic channels.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-density multi-mode neural microelectrode array and preparation and integration method thereof
  • High-density multi-mode neural microelectrode array and preparation and integration method thereof
  • High-density multi-mode neural microelectrode array and preparation and integration method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] like figure 2 As shown, the specific preparation steps of a high-density multimodal neural microelectrode array are as follows:

[0041] (1) First, if figure 2 A PECVD system was used to deposit 1-micron-thick silicon oxide on SOI substrates, and photolithography and reactive ion etching (RIE) techniques were used to pattern the silicon oxide into 2-micron linewidths and Lines with 2 micron line spacing. Using the patterned silicon oxide as a hard mask, anisotropic deep silicon etching technology is used to form a plurality of rectangular channels with a width and a spacing of 2 microns arranged side by side on the top silicon of the SOI silicon wafer.

[0042] (2) Next, if figure 2 As shown in the parts b and b' of the middle, the process parameters of deep silicon etching are adjusted, and the rectangular channel is etched into a tubular channel with a diameter of 2-3 microns by using the isotropic deep silicon etching technology (the cross section is excellent...

Embodiment 2

[0054] The specific preparation steps of a high-density multimodal neural microelectrode array are as follows:

[0055] (1) First, a PECVD system was used to deposit 1 μm thick silicon nitride on the SOI substrate, and photolithography and reactive ion etching (RIE) techniques were used to pattern the silicon oxide into 2 μm line widths and spacings multiple lines. Using the patterned silicon nitride as a hard mask, a rectangular channel with a width of 2 microns is formed on the top silicon of the SOI silicon wafer by anisotropic deep silicon etching technology.

[0056] (2) Next, the process parameters of the deep silicon etching are adjusted, and the rectangular channel is etched into a tubular channel with a diameter of 2-3 microns by using the isotropic deep silicon etching technology.

[0057] (3) Then, use a plasma enhanced chemical vapor deposition system (PECVD) to deposit a layer of silicon nitride with a thickness of 200 nanometers on the silicon wafer as an insula...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Lengthaaaaaaaaaa
Widthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a high-density multi-mode neural microelectrode array and a preparation and integration method thereof. At present, most of high-density Michigan microelectrodes (with more than 100 channels) are not integrated with optical stimulation channels and microfluid channels, and the density of electrode points of the Michigan microelectrodes integrated with the optical stimulation channels or the microfluid channels is often low. According to the invention, a high-density multifunctional integrated mechanism based on 'null line spacing' wiring in a microfluid channel is adopted, and high-temporal-spatial-resolution recording and stimulation of a neural circuit by a microelectrode are realized. And on the other hand, in order to improve the stability of long-term implantation of the neural microelectrode in vivo, a new mechanism for reducing colloid coating by combining microfluid administration and postoperative position adjustment is adopted, and a theoretical basis is provided for realizing long-term high signal-to-noise ratio recording of the microelectrode on the light-induced neural signal.

Description

technical field [0001] The invention belongs to the technical field of MEMS biosensors, and in particular relates to a method for preparing and integrating a high-density multimodal neural microelectrode array for neural signal detection. The preparation and integration of neural microelectrode arrays are realized. Background technique [0002] Brain functions, such as perception, motor control, learning, and memory, arise from the collective activation of neurons distributed across multiple brain regions. Today, although significant progress has been made in understanding the response properties of individual nerve cells, the mechanisms of interaction between complex neural circuits are still poorly understood. A fundamental obstacle to understanding these interactions is the difficulty of simultaneously measuring the activity of the vastly distributed neurons in the brains of behaving animals. Electrophysiological recording has been the gold standard for monitoring the b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B81B7/02B81B7/00B81C1/00
CPCB81B7/02B81B7/0009B81C1/00166B81C1/00246B81B2201/02
Inventor 王明浩樊晔郭帮帮程瑜华王高峰
Owner 杭州电子科技大学温州研究院有限公司