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Method for conducting p-type doping on TMDCs based on PTFE and semiconductor

A PTFE, p-type technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of volatile doping and low efficiency

Active Publication Date: 2021-09-28
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Aiming at the problem of low efficiency and volatile doping of two-dimensional transition metal chalcogenides after the p-type doping of two-dimensional transition metal chalcogenides by fluorine-containing small molecules in the prior art, the purpose of the present invention is to provide a PTFE-based doping Method and semiconductor for p-type doping of TMDCs

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  • Method for conducting p-type doping on TMDCs based on PTFE and semiconductor
  • Method for conducting p-type doping on TMDCs based on PTFE and semiconductor
  • Method for conducting p-type doping on TMDCs based on PTFE and semiconductor

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Embodiment 1

[0046] A method for p-type doping of TMDCs (two-dimensional transition metal dichalcogenides) based on PTFE (polytetrafluoroethylene), such as figure 1 As shown, step S1 and step S2 are included.

[0047] Step S1, obtaining TMDCs materials.

[0048] Among them, the representative structure of TMDCs material is MXn. Wherein, M is a metal, and the metal includes Mo, W, Pt, Hf, In, Re, Nb, Ta, Ga, Sn, Mn, Co, Zr and alloy compounds thereof. X includes O, S, Se, Te and their alloys [alloys here refer to compounds composed of chalcogen elements, such as MoSxSey, WSxTey, MoxWyS2, etc., such compounds are called alloy in English (Zhou, J., Lin, J ., Huang, X.et al.A library of atomically thin metalchalcogenides.Nature 556,355-359(2018), alloy is the meaning of alloy.] and Janus compound (Janus compound refers to replacing the chalcogen atoms in one layer with Another chalcogen atom belongs to TMDCs material structurally). Where n is a natural number greater than or equal to 1. In ...

Embodiment 2

[0066] The difference between it and Embodiment 1 is that the ultra-flat PTFE substrate configured in this embodiment is a PTFE sheet with a surface roughness of 5-7.5nm or a PTFE film with a surface roughness of 3.5-6.5nm, corresponding to:

[0067] 1. When the ultra-flat PTFE substrate is a PTFE sheet with a surface roughness of 5-7.5nm, it can be obtained by softening and reshaping the commercial PTFE sheet by hot pressing. The specific steps include:

[0068] First clamp and fix the commercial PTFE sheet between two ultra-flat carriers, the ultra-flat carrier is the same as Example 1, the difference lies in its SiO 2 Layer thickness is 200-300nm, surface roughness is 0.5-0.8nm;

[0069] Then, under the conditions of softening temperature of 280-320°C and softening time of 20-40min, the commercial PTFE sheet is softened and reshaped by hot pressing to obtain a PTFE sheet with a surface roughness of 5-7.5nm.

[0070] 2. When the ultra-flat PTFE substrate is a PTFE film with...

Embodiment 3

[0075] It differs from Embodiment 1 or 2 in that: before constructing the vertical heterogeneous interface between PTFE and TMDCs, it is also necessary to place the ultra-flat PTFE substrate in plasma for plasma treatment, thereby regulating the fluorine-containing surface layer of the ultra-flat PTFE substrate. quantity.

[0076] Specifically, in this embodiment, the plasma is set to be hydrogen or nitrogen, the flow rate is 1-2000 sccm, the plasma power is 1-5000 W, and the reaction time is 1-120 min.

[0077] For example, the PTFE sheet or PTFE film obtained in the above-mentioned embodiment one is placed in a hydrogen or nitrogen atmosphere with a gas flow rate of 1 sccm for plasma treatment, the plasma power is 10W, and the treatment time is 5min to regulate the PTFE sheet or PTFE film The fluorine content of the surface layer. Those skilled in the art can understand that the above-mentioned flow rate, power and reaction time will vary according to the different requirem...

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Abstract

The invention discloses a method for conducting p-type doping on TMDCs based on PTFE and a semiconductor, and belongs to the technical field of advanced semiconductor devices. The method comprises the steps that: a TMDCs material is transferred to a fluorine-containing ultra-flat PTFE substrate, so that a vertical heterogeneous interface of TMDs and PTFE is constructed, the interface can exert efficient hole doping regulation and control on the TMDCs; and by measuring the spectrum structure and the fluorescence lifetime of the transferred TMDCs, the change of the energy band structure of the TMDCs is represented, so that p-type doping of the TMDCs can be determined, and a p-type doped TMDCs semiconductor is obtained, so that the application of the TMDCs in photoelectric or electronic devices is expanded. According to the method, n-type to p-type doping conversion of the two-dimensional TMDCs at room temperature is achieved, the adjusting effect is long-term and stable, the method is suitable for large-scale production requirements, the method is easy and convenient to operate, controllable doping precision of a monatomic layer is achieved, and hole doping of the two-dimensional TMDCs is achieved through the strong electronegativity effect of the fluorine-containing compound.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a method for p-doping TMDCs based on PTFE and a semiconductor. Background technique [0002] Two-dimensional transition metal dichalcogenides (TMDCs) have demonstrated great potential as next-generation compound semiconductors beyond the competition of Moore's law. They are rich in combinations, and have different crystal phases and crystal structures, thicknesses, and different stacking methods. The most important thing is that they have continuously adjustable band gaps from metal phases to semiconductor phases. However, 2D transition metal chalcogenides tend to have typical n-type semiconducting properties due to thermodynamic defects in their crystal structures (such as sulfur defects, etc.). [0003] Unlike silicon-based materials with mature n-type and p-type doping, the preparation process of p-doped two-dimensional transition metal chalcogenides has not be...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/385H01L21/02H01L29/24
CPCH01L21/385H01L29/24H01L21/02568
Inventor 孙正宗刘瀚祺巴坤
Owner FUDAN UNIV