Oxide semiconductor device and production method thereof

Abstract

The invention relates to an oxide semiconductor device which includes an insulating substrate; a source electrode and a drain electrode are oppositely arranged on the insulating substrate; a nanosheet stack part is included and is arranged on the substrate to form a plurality of conducting channels; the nanosheet stack part comprises a plurality of metal oxide semiconductor nanosheets which are vertically stacked to form the nanosheet stack part, and the two ends of the metal oxide semiconductor nanosheets are embedded into the source electrode and the drain electrode respectively; and a surrounding type grid electrode is included and surrounds the periphery of the plurality of metal oxide semiconductor nanosheets in the nanometer stack part. The design of the novel structure gate-all-around OS-TFT (GAA OS-TFT) can significantly improve the sub-threshold characteristic, the current switch ratio and the short channel effect of the device; the working current of the device can be obviously improved by utilizing the design of combining the multiple layers of nanosheets and the supporting structure; the preparation process of the device is compatible with a mainstream CMOS process and is simple; and through the structure design of the surrounding type grid device, the channel carrier mobility can be remarkably improved, the electrical performance of the device is increased, and the reliability and the stability of the device can also be improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an oxide semiconductor device and a preparation method thereof. Background technique [0002] Oxide thin-film transistor (English: oxide thin-film transistor (TFT)) is a special type of field effect transistor. This technology deposits the semiconductor active layer and dielectric layer in the form of a thin film on the substrate. [0003] The main difference between oxide thin film transistors and amorphous silicon thin film transistors is that the material of the electron channel is oxide instead of amorphous silicon. A commonly used substrate is silicon dioxide. Thin film transistors are mainly used in liquid crystal displays (LCDs) and organic light emitting semiconductors (OLEDs). In conventional transistors, the semiconductor material is the substrate, such as a wafer. [0004] Thin film transistor (thin film transistor, TFT) is the core device of flat panel display, whethe...

AI Technical Summary

Problems solved by technology

However, due to the large number of deep-level defect states in the OS film and the limitation of its conductive mechanism, the carrier mobility and on-state current of OS-TFT are small, and the improvement of device performance is limited.

For planar devices of OS, size reduction can improve device performance, but it will produce serious short channel effect, even if the device channel is thinned to the nanometer scale to reduce the natural length of the device, the short channel effect is still obvious

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