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Aluminum silicon carbide high-power LED radiator and preparation method thereof

A LED heat sink, aluminum silicon carbide technology, applied in the direction of manufacturing tools, casting molding equipment, metal processing equipment, etc.

Pending Publication Date: 2021-10-29
珠海亿特立新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide an aluminum silicon carbide high-power LED heat sink and its preparation method in view of the deficiencies in the above-mentioned prior art. The heat dissipation liner of the body has problems such as high cost, difficult demoulding, low thermal conductivity and dimensional stability, long production cycle, and low yield rate during the molding process.

Method used

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  • Aluminum silicon carbide high-power LED radiator and preparation method thereof

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preparation example Construction

[0056] Specifically, the present invention provides a method for preparing an aluminum silicon carbide high-power LED heat dissipation liner, the specific steps are as follows:

[0057] S1. According to the requirements of technical indicators such as thermal conductivity, dimensional stability, and bending strength of the LED heat dissipation lining board and the principles of heat conduction and bending strength of the microstructure of the aluminum-silicon carbide composite material, the particle gradation design is targeted and customized as follows: The mass ratio of 220#, 100# and 15# is 10:7:3; in order to improve the wettability of aluminum alloy, the contents of Mg and Si are adjusted during the refining process of ZL101A to increase them to 0.4%-0.8% respectively.

[0058] S2. Select silicon carbide particles with corresponding particle size distribution according to the gradation theory, and mix silicon carbide powder with ball milling beads with diameters of 15cm, 8...

Embodiment 1

[0070] The invention provides a method for preparing an aluminum silicon carbide high-power LED radiator, the specific steps are as follows:

[0071] S1. According to the requirements of technical indicators such as thermal conductivity, dimensional stability, and bending strength of the LED heat dissipation lining board and the principles of heat conduction and bending strength of the microstructure of the aluminum-silicon carbide composite material, the particle gradation design is targeted and customized as follows: The mass ratio of 220#, 100# and 15# is 10:7:3; in order to improve the wettability of aluminum alloy, the contents of Mg and Si are adjusted to 0.4% and 0.8% respectively during the refining process of ZL101A.

[0072] S2. Select silicon carbide particles with corresponding particle size distribution according to the gradation theory, and mix silicon carbide powder with ball milling beads with diameters of 15cm, 8cm, and 3cm (the mass ratio of the three kinds of...

Embodiment 2

[0083] The invention provides a method for preparing an aluminum silicon carbide high-power LED radiator, the specific steps are as follows:

[0084] S1. According to the requirements of technical indicators such as thermal conductivity, dimensional stability, and bending strength of the LED heat dissipation lining board and the principles of heat conduction and bending strength of the microstructure of the aluminum-silicon carbide composite material, the particle gradation design is targeted and customized as follows: The mass ratio of 220#, 100# and 15# is 10:7:3; in order to improve the wettability of aluminum alloy, the contents of Mg and Si are adjusted to 0.5% and 0.6% respectively during the refining process of ZL101A.

[0085] S2. Select silicon carbide particles with corresponding particle size distribution according to the gradation theory, and mix silicon carbide powder with ball milling beads with diameters of 15cm, 8cm, and 3cm (the mass ratio of the three kinds of...

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Abstract

The invention provides an aluminum silicon carbide high-power LED radiator and a preparation method thereof. The preparation method comprises the following steps: proportioning, ball-milling and mixing, granulating, and pretreating raw materials to obtain granulated powder; forming the granulated powder into a silicon carbide ceramic prefabricated part through a cold isostatic pressing technology; sintering the formed silicon carbide prefabricated part; smelting a ZL101A aluminum alloy to obtain an aluminum alloy melt; putting the silicon carbide ceramic prefabricated part into a steel mold through a vacuum pressure infiltration method, pressing molten aluminum alloy into pores of the silicon carbide ceramic prefabricated part by adopting high-pressure inert gas at a certain temperature in a vacuum environment, and carrying out heat treatment to prepare an aluminum silicon carbide casting; and carrying out surface metallization plating process treatment on an aluminum silicon carbide finished product to form the aluminum silicon carbide high-power LED radiator. The method overcomes the defects of complex process, expensive equipment, long production period and high energy consumption, has the advantages of compact products, excellent performance, simple operation and low cost, and is wide in application range.

Description

technical field [0001] The invention belongs to the technical field of new material preparation and package heat dissipation, and particularly discloses an aluminum silicon carbide high-power LED heat sink and a preparation method thereof. Background technique [0002] Generally speaking, the stability and quality of LED lamps are very important to the heat dissipation of the lamp body itself. The heat dissipation of high-brightness LED lamps on the market often uses natural heat dissipation, and the effect is not ideal. LED lamps made of LED light sources are composed of LEDs, heat dissipation structures, drivers, and lenses. Therefore, heat dissipation is also an important part. If LEDs cannot dissipate heat well, their lifespan will also be affected. Heat is concentrated in a chip with a small size, and the temperature of the chip increases, causing non-uniform distribution of thermal stress, chip luminous efficiency and phosphor laser efficiency decrease; when the temper...

Claims

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Application Information

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IPC IPC(8): B22D23/04B22D27/00B22D27/15B22C9/26
CPCB22D23/04B22D27/15B22D27/003B22C9/26
Inventor 何岚何娟景文甲汪震王鹏冲
Owner 珠海亿特立新材料有限公司
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