Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thinned crystalline silicon cell and preparation method thereof

A crystalline silicon cell and thinning technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of immature thin crystalline silicon cell preparation technology, decreased cell conversion efficiency, and reduced crystalline silicon cell thickness, etc. Absorption and efficiency loss, improved conversion efficiency, cost-effective effect

Pending Publication Date: 2021-10-29
HANGZHOU DIANZI UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, the preparation technology of thin crystalline silicon cells is not mature
Reducing the thickness of the crystalline silicon cell brings about the loss of optical absorption, resulting in a decrease in the conversion efficiency of the cell

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thinned crystalline silicon cell and preparation method thereof
  • Thinned crystalline silicon cell and preparation method thereof
  • Thinned crystalline silicon cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Embodiment one, such as figure 1 Shown:

[0026] Step 1: Al is sequentially prepared on the back of a p-type single crystal silicon wafer with a thickness of 100 microns 2 o 3 thin film, third SiN x Thin film and second SiO x thin film; the Al 2 o 3 film thickness of 8 nm, the third SiN x The film thickness is 30 nm, the second SiO x The thickness of the film is 200 nm;

[0027] Step 2: Laser drilling is used on the back of the p-type single crystal silicon wafer obtained in step 1, and a p+ local back surface field is formed in the hole, and an aluminum electrode is formed by screen printing; the substrate resistivity of the p-type single crystal silicon wafer is 0.9Ωcm.

[0028] Step 3: Texturing the upper surface of the product obtained in Step 2 to form randomly distributed pyramids with a characteristic size of 1-2um;

[0029] Step 4: On the product obtained in Step 3, use POCl at a temperature of 840°C 3 The diffusion method forms the n+ emitter to obta...

Embodiment 2

[0039] Step 1: Al is sequentially prepared on the back of a p-type single crystal silicon wafer with a thickness of 120 microns 2 o 3 thin film, third SiN x Thin film and second SiO x thin film; the Al 2 o 3 film thickness of 10 nm, the third SiN x The film thickness is 38 nm, the second SiO x The film thickness is 220 nm;

[0040] Step 2: Drill holes on the back of the p-type single crystal silicon wafer obtained in step 1, and form a p+ local back surface field in the holes, and form aluminum electrodes by screen printing;

[0041] Step 3: Texturing the upper surface of the product obtained in Step 2 to form randomly distributed pyramids with a characteristic size of 1-2um;

[0042] Step 4: On the product obtained in Step 3, use POCl at a temperature of 880°C 3 The diffusion method forms the n+ emitter to obtain a p-n junction, wherein the doping concentration of the n+ emitter is 1.2×10 19 / cm 3 ;

[0043] Step 5: SiO is sequentially prepared on the upper surface...

Embodiment 3

[0046] A method for preparing a thinned crystalline silicon battery, the method specifically comprising the following steps:

[0047] Step 1: Al is sequentially prepared on the back of a p-type single crystal silicon wafer with a thickness of 140 microns 2 o 3 thin film, third SiN x Thin film and second SiO x thin film; the Al 2 o 3 film thickness of 15 nm, a third SiN x The film thickness is 45 nm, the second SiO x The film thickness is 250 nm;

[0048] Step 2: Drill holes on the back of the p-type single crystal silicon wafer obtained in step 1, and form a p+ local back surface field in the holes, and form aluminum electrodes by screen printing;

[0049] Step 3: Texturing the upper surface of the product obtained in Step 2 to form randomly distributed pyramids with a characteristic size of 1-2um;

[0050] Step 4: On the product obtained in Step 3, use POCl at a temperature of 900°C 3 The diffusion method forms the n+ emitter to obtain a p-n junction, wherein the dop...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a thinned crystalline silicon cell and a preparation method thereof, and the thinned crystalline silicon cell sequentially comprises a first SiOx film, a first SiNx film, a second SiNx film, a SiO2 passivation film, a p-type monocrystalline silicon wafer, an Al2O3 film, a third SiNx film and a second SiOx film from top to bottom. The upper surface of the p-type monocrystalline silicon wafer is textured, the p-type monocrystalline silicon forms an n + emitter to obtain a p-n junction, laser drilling is performed on the back surface of the p-type monocrystalline silicon wafer, a p + local back surface field is formed in a hole, and a metal contact is arranged; a selective emitter junction is arranged on the upper surface of the p-type monocrystalline silicon wafer, and a metal electrode is arranged on the selective emitter junction; according to the invention, the problems of light absorption and efficiency loss of the cell can be effectively solved under the condition that the thickness of the crystalline silicon cell is reduced.

Description

technical field [0001] The field of the present invention is the field of photovoltaic new energy technology, and specifically relates to a method for preparing thinned crystalline silicon cells. The present invention proposes solutions to light absorption loss and electrical optimization for crystalline silicon cells when the thickness of crystalline silicon is reduced. Program. It is expected that the design adopts a suitable method for cell preparation, and the conversion efficiency of crystalline silicon solar cells is improved under the condition of cost reduction brought about by cell thinning. Background technique [0002] As a sustainable clean new energy source, photovoltaic solar cells are being rapidly applied and popularized. In recent years, crystalline silicon solar cells have been occupying a dominant position in the photovoltaic market due to their unique advantages. Currently, the typical thickness of industrial crystalline silicon cells is 170-180 microns...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236H01L31/0224H01L31/068H01L31/18
CPCH01L31/02363H01L31/022425H01L31/068H01L31/1804Y02E10/547Y02P70/50
Inventor 严文生臧月
Owner HANGZHOU DIANZI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com