Method and device for preparing high-purity cobalt through hydrogen reduction

Abstract

The invention relates to a method and device for preparing high-purity cobalt through hydrogen reduction. The device comprises an iodination reactor, a gas purifier, a reactor, a regenerator and a condenser, the iodination reactor is heated through a resistor, the reaction temperature is guaranteed by external resistance heating of the reactor, and a cobalt rod in the reduction reactor is subjected to induction heating to promote the reaction; and residual cobalt iodide, hydrogen iodide and hydrogen in the reactor are firstly subjected to cobalt metal deposition through the regenerator, then are separated through the condenser and then are purified through the gas purifier, and the purified hydrogen and hydrogen iodide are conveyed into the reduction reactor and the iodination reactor respectively under conveying of a dry vacuum pump. The method is free of reaction exposure, good in process leakproofness and friendly to environment and operation, and the method for preparing the high-purity cobalt by reducing the gas-phase cobalt iodide through the hydrogen is simple in reaction, short in production period and high in product purity.

Description

technical field [0001] The invention relates to the field of semiconductor material preparation, in particular to a method and device for preparing high-purity cobalt by hydrogen reduction. Background technique [0002] The invention relates to the preparation of high-purity cobalt used as a wiring material for ultra-large-scale integrated circuits with a process below 5nm. With the development of semiconductor process technology and the successive development of 7nm, 5nm and 3nm processes, the number of silicon-based chip transistors represented by the consumer electronics field has reached tens of billions. The main problem is that the wiring material Cu has a low diffusion coefficient Large, it has a serious impact on the stability of the transistor, and it is no longer applicable, and Co is currently the most likely candidate material to replace Cu as a new generation of integrated circuit wiring materials. The survey found that the current preparation methods for prepa...

AI Technical Summary

Problems solved by technology

With the development of semiconductor process technology and the successive development of 7nm, 5nm and 3nm processes, the number of transistors on silicon-based chips represented by the consumer electronics field has reached tens of billions. Large, seriously affecting the stability of transistors, it is no longer applicable, and Co is the most likely candidate material to replace Cu as a new generation of integrated circuit wiring materials

The survey found that the current preparation methods for preparing high-purity cobalt mainly include solution electrolysis, ion exchange, extraction, etc., and the appropriate combination of the three processes can produce 5N-grade high-purity cobalt. For higher-purity cobalt (greater than 5N) There is still difficulty

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