A kind of lead position doping methylamine lead iodine single crystal thin film and preparation method thereof

A single crystal thin film, methylamine lead iodine technology, applied in-situ doping methylamine lead iodine single crystal thin film and its preparation field, can solve the problem of slow crystallization speed, impurities mixed into the main lattice, inability to separate dopant precursors, etc. problems, to achieve the effects of reduced toxicity, high repeatability, and easy control of the preparation process

Active Publication Date: 2022-05-13
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are many limitations and challenges in heterogeneous doping-related crystal growth techniques. For example, the use of anti-solvent vapor-assisted crystallization requires the selection of solvent-anti-solvent combinations suitable for all precursors. In addition, crystal growth from saturated solutions cooled process, whose temperature may be too low to separate the dopant from its precursor
The crystallization speed of these methods is very slow, very close to the condition of equilibrium, which is not conducive to the mixing of impurities into the host lattice

Method used

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  • A kind of lead position doping methylamine lead iodine single crystal thin film and preparation method thereof
  • A kind of lead position doping methylamine lead iodine single crystal thin film and preparation method thereof
  • A kind of lead position doping methylamine lead iodine single crystal thin film and preparation method thereof

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preparation example Construction

[0028]The preparation method of the lead position doped methylamine lead iodine single crystal thin film of the present invention comprises the following steps:

[0029] Step 1, the purified methylammonium iodide (CH 6 IN), lead iodide (PbI) 2 ) and doping element iodide (SmI 3 , LaI 3 , or PrI 2 ) according to the molecular formula of the obtained single crystal film, using N,N-dimethylformamide (DMF) or γ-butyrolactone (GBL) as solvent, stirring and heating on a hot stage at 60 ° C and 1000 r / min for 12 Hour. After filtering and cleaning with a 0.20 μm polytetrafluoroethylene filter, the obtained solution was placed in an oil bath at 100° C. for heating and growing for 3 hours to obtain a precursor solution containing methylamine lead iodine daughter crystals.

[0030] Step 2: Preheat the substrate (polyimide PI) to 75°C, spread the precursor solution obtained in step 1 evenly on the clean substrate, and then spin it for 15 seconds to obtain a film, wherein the cloth T...

Embodiment 1

[0033] A lead doped methylamine lead iodine single crystal film and a preparation method thereof, wherein the molecular formula of the single crystal film is CH 3 NH 3 Pb 0.994 La 0.004 I 3 , the specific preparation steps are as follows:

[0034] Step 1, the mol ratio after purification is 3:3:2 methylammonium iodide (CH 6 IN), lead iodide (PbI) 2 ) and lanthanum iodide (LaI 3 ) and mixed, using N,N-dimethylformamide (DMF) as a solvent, and stirring at 60° C., 1000 rpm on a hot stage for 12 hours. After filtering and cleaning with a 0.20 μm polytetrafluoroethylene filter, the solution with a concentration of 0.5 mol / L was obtained. The solution was heated and grown in an oil bath at 100° C. for 3 hours to obtain a precursor solution containing methylamine lead iodine daughter crystals.

[0035] Step 2: Preheat the substrate to 75°C, the substrate is preferably polyimide (PI). The precursor solution was evenly spread on a clean substrate and left for 15 seconds, and t...

Embodiment 2

[0040] The lead-doped methylamine lead iodine single crystal film and the preparation method thereof in this embodiment are the same as those in Embodiment 1, except that γ-butyrolactone (GBL) is used as a solvent in step 1 in this embodiment.

[0041] The important parameter conditions involved in this example are shown in Table 1, including doping elements, doping amount, precursor solution concentration and growth time. The saturation polarization is 14.2μC / cm 2 , the remanent polarization is 8.7 μC / cm 2 , the piezoelectric coefficient d measured along the (100) direction 33 is 4.3pm / V, and the hole mobility is 44.72cm 2 V -1 s -1 , the hole mobility is 70.55cm 2 V -1 s -1 ,As shown in table 2.

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Abstract

The invention discloses a lead-site-doped methylamine-lead-iodine single crystal thin film and a preparation method thereof. The single crystal thin film is made of CH 3 NH 3 PB 3 As the parent body, La is doped at the lead site, and the molecular formula is CH 3 NH 3 Pb 1‑x La 2x / 3 I 3 ( x =0.005‑0.19) single crystal thin film, doped with Sm at the lead site, the molecular formula is CH 3 NH 3 Pb 1‑y SM 2y / 3 I 3 ( x =0.005‑0.19) single crystal film, doped with Pr at the lead site, the molecular formula is CH 3 NH 3 Pb 1‑z PR z I 3 ( z =0.005‑0.27) single crystal film. The present invention effectively improves the saturation polarization intensity, remnant polarization intensity, piezoelectric coefficient and mobility of carriers through the doping of La, Sm, and Pr elements, and the substitution of lead greatly improves its photoelectric performance and reduces The toxicity brought by the heavy metal lead is eliminated, the process is simple, the preparation process is easy to control, and the repeatability is high.

Description

technical field [0001] The invention belongs to the technical field of halogen perovskite, and relates to a position-doped methylamine lead iodine single crystal thin film and a preparation method thereof. Background technique [0002] The special resistance configuration of rare earth ions determines its unique spectral behavior, which is also the intrinsic reason for the formation of the physicochemical electromagnetic properties of rare earth elements. La, Pr and Sm have many excellent properties as three doped rare earth elements. In 2019, Shkir et al. successfully fabricated high-quality photodetectors based on Pr:CdS thin films by a facile spray pyrolysis method. Both the quantum efficiency value (EQE) and the photoswitching properties are enhanced, making Pr:CdS a high-quality photodetector (M Shkir, et al. A Noticeable Effect of Pr Dopingon Key Optoelectrical Properties of CdS Thin Films Prepared Using SprayPyrolysis Technique for High-performance Photodetector App...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/54C30B19/00
CPCC30B29/54C30B19/00
Inventor 曾寿信赵泽恩袁国亮
Owner NANJING UNIV OF SCI & TECH
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