Black phosphorus thin film reaction device, black phosphorus thin film preparation method

Abstract

The invention discloses a black phosphorus film reaction device and a method for preparing a black phosphorus film. The device includes a vacuum-tight reaction chamber, and a slow-release body is arranged in the reaction chamber, and the slow-release body separates the reaction chamber A first reaction chamber for placing reactants and a second reaction chamber for placing growth substrates, capillary channels are formed in the sustained-release body, and the pressure in the second reaction chamber is controlled to be lower than that of the first reaction chamber during the heated reaction process. pressure in the cavity. In the present invention, a section of slow-release material is set between the reactant and the growth substrate to moderately suppress the transmission of the gaseous source in the first reaction chamber to the second reaction chamber, thereby controlling the pressure at the growth end from being too high, that is, the second The pressure of the reaction chamber is lower than the pressure of the first reaction chamber, which improves the uniformity of source supply over time, effectively suppresses the formation of excessive nucleation points on the substrate, and finally obtains a high-quality single crystal film or alloy film.

Description

technical field [0001] The invention relates to the technical field of two-dimensional materials, in particular to a black phosphorus thin film reaction device and a method for preparing the black phosphorus thin film. Background technique [0002] In recent years, as a direct-bandgap two-dimensional semiconductor material, black phosphorus has received extensive attention in electronic and optoelectronic applications due to its narrow bandgap characteristics and tunable direct bandgap. In addition, using the alloying strategy to substitute arsenic atoms into black phosphorus crystals can form a black arsenic phosphorus alloy, which can realize the band gap adjustment of the black phosphorus material system and further enhance the competition of the black phosphorus material system in the fields of optoelectronic devices and other fields. Advantage. [0003] Although black phosphorus has great application prospects, the current research progress on the epitaxial growth of i...

AI Technical Summary

Problems solved by technology

[0003] Although black phosphorus has great application prospects, the current research progress on the epitaxial growth of its thin films still faces many problems, which hinder the large-scale application of black phosphorus materials in the field of devices.

At present, there are mainly two methods for the preparation of black phosphorus thin films: chemical vapor transport method and laser pulse deposition method. The existing two methods cannot obtain single crystal thin films with high crystal quality.

[0004] For the existing chemical vapor transport method, the reactant and the growth substrate are placed in the same cavity, and under a certain temperature and pressure, nucleation is induced on the substrate by the action of a mineralizer, and then a black phosphorus film is grown. , during the heat treatment process, the pressure of the reactants and the growth substrate is the same, and the existing problems include at least: the pressure required to meet the black phosphorus phase transformation nuclear epitaxy is relatively high, and it is difficult to control the formation of nucleation sites under such a large pressure , it is easy to get a lot of nucleation sites to grow at the same time, so as to finally get polycrystalline films with low crystalline quality, and it is difficult to extend this technology to the growth of high-quality black arsenic-phosphorus alloy films

Images