A method for high-clean and non-destructive transfer of graphene nanoribbons

Abstract

The present invention proposes a method for high-clean and non-destructive transfer of graphene nanoribbons, by growing an Au(111) layer with a certain thickness on the Mica substrate to obtain the Au(111) / Mica growth substrate; using a CVD growth process on the Au(111) surface N=7GNR with a full monolayer was grown to obtain a N=7GNR / Au(111) / Mica sample, and a thin blade was used to coat the Au(111) layer of the N=7GNR / Au(111) / Mica sample grown with graphene nanoribbons Scratch lightly on the periphery of the surface to destroy the integrity of the amorphous carbon film on the surface, and then use a soft brush to stick a certain concentration of potassium iodide iodine solution with weak etching ability and brush it several times to make the amorphous carbon film on the surface fall off, and at the same time The N=7GNR / Au(111) layer is exposed to facilitate the subsequent separation of the Mica substrate from the Au(111) coating. During the transfer process, no new impurities and new defects are introduced, and the rapid transfer of graphene nanoribbons is achieved by purposefully removing the amorphous carbon layer.

Description

technical field [0001] The invention relates to the field of transfer of graphene nanobelts, in particular to a method for highly clean and non-destructive transfer of graphene nanobelts. Background technique [0002] Semiconductor devices are important basic electronic components for the manufacture of integrated circuits and chips. With the rapid development of high integration and microscale of electronic components, this will inevitably pose greater challenges to the nanoscale of electronic components. At present, the most advanced semiconductor photolithography process has reached 7nm and 5nm, and even 1nm process technology can be achieved in the laboratory. Although the gate length of the silicon material traditionally used to prepare semiconductor components is ≥5nm, it has quite ideal advantages, but when the gate length of the silicon material is less than 5nm, the more obvious "tunnel effect" will appear with the shortening of the gate length , preventing the sou...

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Problems solved by technology

This will make the transfer of graphene nanoribbons more complicated, and it will be more difficult to obtain ultra-clean high-quality graphene nanoribbons

Ultra-clean and non-destructive transfer of graphene nano-transfer process cannot be overcome. Before that, graphene nano-belts were difficult to apply to nano-electronic components, and it was impossible to break Moore's law that broke the physical limit of silicon materials and achieve ultra-integration of <5nm process. dream

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