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High-temperature-resistant adhesive tape for semiconductor packaging and preparation method thereof
Inactive Publication Date: 2021-11-23
芜湖徽氏新材料科技有限公司
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[0006] The purpose of the present invention is to provide a high temperature resistant tape for semiconductor packaging and its preparation method. Through the high temperature resistant acrylic pressure sensitiveadhesive system, it solves the problem that the current semiconductor packaging tape is a siliconesystempressure sensitive tape and a hot melt tape. Non-adhesive, heat and pressure are required in the bonding process, high energy consumption, siliconepressure sensitive tape needs to use expensive fluorine release film, and there is a problem of silicon transfer during the high temperature packaging process
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Embodiment 1
[0035] A high-temperature-resistant adhesive tape for semiconductor packaging, comprising the following raw materials in parts by weight: 90 parts of high-temperature-resistant acrylic pressure-sensitive adhesive, 40 parts of ethyl acetate, 1 part of diethylenetriamine, 1 part of carbon nanotubes, and 15 parts of modified epoxy resin ;
[0036] The high temperature resistant tape is made by the following steps:
[0037] Mix and stir high-temperature resistant acrylic pressure-sensitive adhesive, ethyl acetate, diethylenetriamine, carbon nanotubes, and modified epoxy resin evenly, and then coat it on the 20μm PI original film. The molded film was cured for 45 hours at a temperature of 45° C. to obtain a high temperature-resistant adhesive tape for semiconductor packaging.
[0038] High temperature resistant acrylic pressure sensitive adhesive is made by the following steps:
[0049] A high-temperature-resistant adhesive tape for semiconductor packaging, comprising the following raw materials in parts by weight: 100 parts of high-temperature-resistant acrylic pressure-sensitive adhesive, 50 parts of ethyl acetate, 2 parts of triethylenetetramine, 2 parts of carbon nanotubes, and 18 parts of modified epoxy resin ;
[0050] The high temperature resistant tape is made by the following steps:
[0051] Mix and stir high-temperature resistant acrylic pressure-sensitive adhesive, ethyl acetate, triethylenetetramine, carbon nanotubes, and modified epoxy resin evenly, and then coat it on the original 25 μm PI film. The molded film was cured for 48 hours at a temperature of 50° C. to obtain a high-temperature-resistant adhesive tape for semiconductor packaging.
[0052] High temperature resistant acrylic pressure sensitive adhesive is made by the following steps:
[0063] A high-temperature-resistant adhesive tape for semiconductor packaging, comprising the following raw materials in parts by weight: 110 parts of high-temperature-resistant acrylic pressure-sensitive adhesive, 60 parts of ethyl acetate, 3 parts of diethylenetriamine, 3 parts of carbon nanotubes, and 20 parts of modified epoxy resin ;
[0064] The high temperature resistant tape is made by the following steps:
[0065] Mix and stir high-temperature resistant acrylic pressure-sensitive adhesive, ethyl acetate, diethylenetriamine, carbon nanotubes, and modified epoxy resin evenly, and then coat it on a 30 μm PI original film. The molded film was cured for 50 hours at a temperature of 55° C. to obtain a high temperature-resistant adhesive tape for semiconductor packaging.
[0066] High temperature resistant acrylic pressure sensitive adhesive is made by the following steps:
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Abstract
The invention discloses a high-temperature-resistant adhesive tape for semiconductor packaging and a preparation method thereof. The high-temperature-resistant adhesive tape comprises the following raw materials in parts by weight: 90-110 parts of a high-temperature-resistant acrylic pressure-sensitive adhesive, 40-60 parts of ethyl acetate, 1-3 parts of an epoxy curing agent, 1-3 parts of carbon nanotubes and 15-20 parts of modified epoxy resin. A high-temperature-resistant acrylic pressure-sensitive adhesive system is used, so that the adhesive tape has a quite good high-temperature-resistant effect, the adhesive layer is small in high-temperature-resistant stripping force change, the adhesive tape is easy to remove after the packaging process, and the risk of leakage of an epoxy molding compound is avoided; meanwhile, the high-temperature-resistant adhesive tape is not prone to falling off due to thermo-oxidative aging, anti-static treatment is synchronously carried out in the adhesive layer, and the stripping voltage of the adhesive layer is less than 100 V, so that a semiconductorchip is effectively prevented from being polluted by dust adsorbed by static electricity.
Description
technical field [0001] The invention relates to the technical field of semiconductor preparation, in particular to a high-temperature-resistant adhesive tape for semiconductor packaging and a preparation method thereof. Background technique [0002] QFN is a leadless package with a square or rectangular shape. Because the QFN package does not have chicken-wing leads like traditional SOIC and TSOP packages, the conductive path between the internal pins and the pad is short, and the self-inductance coefficient and the package body It provides excellent electrical performance due to low wiring resistance, and it also provides excellent thermal performance through the exposed lead frame pad, which has a direct heat dissipation channel to dissipate heat inside the package, unlike traditional Compared with the 28-pin PLCC package, the area (5mmx5mm) of the 32-pin QFN package is reduced by 84%, the thickness is reduced by 80%, the weight is reduced by 95%, and the parasitic effect ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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