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Non-evaporable quaternary Ti-Zr-V-Cu vacuum getter film and preparation method thereof

A ti-zr-v-cu, vacuum suction technology, applied in the fields of chemistry and metallurgy, can solve the problems of local power deposition, increase of resistive wall impedance of vacuum pipeline, and aggravated wake field effect, etc.

Active Publication Date: 2021-11-26
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Diffraction-limited storage ring vacuum chambers are coated with NEG thin films. NEG thin films cause the resistance wall impedance of the vacuum pipe to increase, which in turn intensifies the wake field effect, resulting in many problems such as local power deposition, emissivity increase, energy dissipation increase, and beam threshold.
This means that the beam collective effect may become an important factor limiting the beam intensity and machine performance of the diffraction-limited storage ring

Method used

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  • Non-evaporable quaternary Ti-Zr-V-Cu vacuum getter film and preparation method thereof
  • Non-evaporable quaternary Ti-Zr-V-Cu vacuum getter film and preparation method thereof
  • Non-evaporable quaternary Ti-Zr-V-Cu vacuum getter film and preparation method thereof

Examples

Experimental program
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preparation example Construction

[0062] A method for preparing a non-evaporable quaternary Ti-Zr-V-Cu vacuum getter film, comprising the steps of:

[0063] A dense layer thin film of Ti, Zr, V and Cu is deposited on the base material by magnetron sputtering.

[0064] In some embodiments, the method for preparing the non-evaporable quaternary Ti-Zr-V-Cu vacuum getter thin film further includes the following method: before depositing by magnetron sputtering, plasma cleaning is performed on the base material.

[0065] In some embodiments, the target material used in the magnetron sputtering method is Ti-Zr-V-Cu alloy, the purity of the target material is ≥99.5%; the sputtering gas is Kr, and the pulsed DC sputtering method is adopted Law.

[0066] In some embodiments, the magnetron sputtering method includes the following process: current 0.1-0.5A, working pressure 5-15Pa, deposition time 10-20h, magnetic field current intensity 100-200A.

[0067] In some embodiments, the matrix material is oxygen-free copper ...

Embodiment 1

[0070] This example provides a method for preparing a non-evaporable quaternary Ti-Zr-V-Cu vacuum getter film.

[0071] The preparation method of non-evaporable quaternary Ti-Zr-V-Cu vacuum getter film, comprises the steps:

[0072] On the oxygen-free copper OFC base material, the dense layer film of Ti, Zr, V and Cu is deposited and formed by magnetron sputtering. The target material used in the magnetron sputtering method is Ti-Zr-V-Cu alloy, the purity of the target material is ≥99.5%; the sputtering gas is Kr, and the pulse direct current sputtering method is adopted. The magnetron sputtering method includes the following process: current 0.1A, working pressure 15Pa, deposition time 10h, magnetic field current intensity 200A.

Embodiment 2

[0074] This example provides a method for preparing a non-evaporable quaternary Ti-Zr-V-Cu vacuum getter film.

[0075] The preparation method of non-evaporable quaternary Ti-Zr-V-Cu vacuum getter film, comprises the steps:

[0076] On the oxygen-free copper OFC base material, the dense layer film of Ti, Zr, V and Cu is deposited and formed by magnetron sputtering. The target material used in the magnetron sputtering method is Ti-Zr-V-Cu alloy, the purity of the target material is ≥99.5%; the sputtering gas is Kr, and the pulse direct current sputtering method is adopted. The magnetron sputtering method includes the following process: current 0.5A, working pressure 5Pa, deposition time 20h, magnetic field current intensity 100A.

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Abstract

The invention discloses a non-evaporable quaternary Ti-Zr-V-Cu vacuum getter film and a preparation method of the non-evaporable quaternary Ti-Zr-V-Cu vacuum getter film. The non-evaporable quaternary Ti-Zr-V-Cu vacuum getter film comprises the following components, by atomic percent, 20-35% of titanium, 2-35% of zirconium, 20-35% of vanadium, 2.0-8.0% of copper, and the balance impurities. The preparation method of the non-evaporable quaternary Ti-Zr-V-Cu vacuum getter film comprises the following step of conducting depositing on a base material by adopting a magnetron sputtering method to form a compact layer film of four elements of Ti, Zr, V and Cu. According to the non-evaporable quaternary Ti-Zr-V-Cu vacuum getter film, due to the addition of the element Cu, the film has low resistivity, the activation temperature of the film is lower than 180 DEG C, the vacuum impedance is low, and the application requirement of a synchrotron radiation light source can be met.

Description

technical field [0001] The invention relates to the technical fields of chemistry and metallurgy, in particular to a non-evaporable quaternary Ti-Zr-V-Cu vacuum getter film and a preparation method thereof. Background technique [0002] The synchrotron radiation source based on the electron storage ring has experienced three generations of development and has become the most widely used high-performance X-ray source in the field of basic scientific research in the 20th century. With the scientific community's demand for X-rays with lower emittance, higher brightness, and higher coherence, as well as breakthroughs in the design theory and methods of diffraction-limited synchrotron radiation devices, the compact multi-bend iron elimination dispersion (Multi-bend Achromat, MBA) structure design scheme is gradually mature, and the design and construction of storage ring light source with ultra-low beam emittance, high brightness and high spatial coherence has become a developmen...

Claims

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Application Information

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IPC IPC(8): C22C30/02C23C14/16C23C14/35B01J20/02B01J20/28B01D53/02B01J20/30
CPCC22C30/02C23C14/165C23C14/35C23C14/3485B01J20/0211B01J20/0214B01J20/0237B01J20/28033B01D53/02
Inventor 王思慧朱邦乐尉伟王勇
Owner UNIV OF SCI & TECH OF CHINA
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