Method for welding platinum target material and back plate

Abstract

The invention provides a method for welding a platinum target material and a back plate. The method comprises the brief steps that the welding face of the platinum target material and the welding face of the back plate are pretreated; the welding face of the platinum target material is subjected to chemical copper plating treatment; the welding faces of the platinum target and the back plate are heated to a constant temperature; molten brazing filler metal is poured into the welding face of the platinum target material and the welding face of the back plate, and is quickly and uniformly spread to the whole welding face by a scraper; the molten brazing filler metal is added while an ultrasonic vibration meter is started to be applied to the welding face of the platinum target material and the welding face of the back plate; the welding surfaces of the platinum target material and the back plate are subjected to butting, pressurization is conducted, treatment is conducted according to a heating and cooling process, and finish machining is conducted to obtain the platinum target material with the back plate; and after welding, C-Scan ultrasonic scanning detection is conducted, the welding rate is 99% or above, and it is indicated that the welding strength of the technical method can meet the working requirement of the platinum target.

Description

technical field [0001] The invention belongs to the field of target material manufacturing, and in particular relates to a platinum target material welding method. Background technique [0002] A capacitor with a ferroelectric film structure as a high-density semiconductor memory, the upper electrode and the lower electrode of the capacitor are usually composed of a platinum film formed by sputtering, etc., and the raw material for such a platinum film is a high-purity platinum target. . The high-purity platinum target needs to be bound to the back plate before it can be used. The back plate mainly plays the role of fixing and strengthening. The platinum target will be bombarded by high-energy particles during the sputtering process. The welding quality of the platinum target and the back plate is very high. To a certain extent, it affects the efficiency of later sputtering and the performance of the deposited platinum film. In order to achieve high sputtering efficiency an...

AI Technical Summary

Problems solved by technology

Diffusion welding and electron beam welding both achieve material welding through high temperature. It is difficult to weld materials with large differences in properties. The microstructure, uniformity of structure and grain size will all have adverse changes, and it will also cause problems such as platinum metal oxidation. And the use environment Harsh, high equipment cost

[0004] At present, in the manufacture of platinum targets, the focus is mainly on target molding. For example, Chinese patent document 1 invents a nickel-platinum alloy sputtering target and its preparation method, and US patent document 2 both focuses on the preparation process of the target. , the welding technology of the target and the back plate is not involved; patent document 3 invents a nickel-platinum alloy target with a copper alloy back plate and its preparation method, which is to grind the surface of the nickel-platinum target and the back plate in advance After that, put them together in the package, vacuumize and seal them, and heat isostatic pressing above 575-800°C to make the target and the backplane form a joint body. This kind of welding by hot isostatic pressing, high temperature is not good for the target structure , It is also prone to deformation, and needs to be machined again later, with high cost and long period

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