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Photosensitive polymer as well as preparation method and application thereof

A polymer, photosensitive technology, applied in the direction of photosensitive materials used in optomechanical equipment, can solve the problems of poor wettability, poor compatibility, narrow application range, etc., and achieve the effect of good wettability and good compatibility

Active Publication Date: 2021-12-07
珠海雅天科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current photoresist formula cannot be applied to 193nm immersion lithography to meet the resolution of the semiconductor process below 45nm
Moreover, the wettability of the photosensitive polymer in the current photoresist is poor, and the wettability cannot be adjusted according to the needs, so that the compatibility of the photoresist with the coating material in the application is poor, and the scope of application is narrow

Method used

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  • Photosensitive polymer as well as preparation method and application thereof
  • Photosensitive polymer as well as preparation method and application thereof
  • Photosensitive polymer as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0085] A photosensitive polymer prepared from monomers shown in the following formula:

[0086]

[0087] The preparation process of the photosensitive polymer is as follows: 30g of monomer M1, 15g of monomer M2 and 15g of monomer M3 were dissolved in 70mL of acetonitrile and transferred to the reaction flask, the temperature of the mixed liquid system was raised to 90°C, and 0.20g of supernatant was added Dibenzoyl peroxide (BPO) was oxidized, mixed evenly, the temperature of the reaction system was increased to 100°C, the reaction was continued for 8 hours, 5mL of ethanol was added to terminate the reaction, and the mixed solution after the reaction was terminated was precipitated in ethanol, and the obtained solid was in Heat and dry in an oven at 100° C. for 8 hours to obtain 152.1 g of white powdery photosensitive polymer Q.

[0088] Adopt gel permeation chromatography (Gel permeation chromatography, GPC) to measure the number average molecular weight of photosensitive ...

Embodiment 2

[0103] A kind of ArFi photoresist, comprises the photosensitive polymer Q1 of 25g embodiment 1 preparations, 0.2g photosensitive acid generator P2, 0.05g acid diffusion stopper P3 and 0.01g surfactant P4, wherein, P2 contains components as 0.02g P2a, 0.05g P2b, 0.03g P2c and 0.1g P2d, P3 contains components of 0.01g P3a, 0.05g P3b, 0.04g P3c.

[0104] The structural formulas of P2a-P2d are as follows:

[0105]

[0106] The structural formulas of P3a-P3c are as follows:

[0107]

[0108] The structural formula of P4 is as follows:

[0109]

[0110] Prepare ArFi photoresist, the specific operation steps are as follows:

[0111] Take 25g of the photosensitive polymer Q1 prepared in Example 1, adjust its contact angle from 87° to 24° by acid treatment, and dissolve it in ethyl lactate (ethyl lactate, EL) until the polymer concentration is about 5% mass concentration Then add 0.2g of photosensitive acid generator P2, 0.05g of acid diffusion terminator P3 and 0.01g of su...

Embodiment 3

[0123] An ArFi photoresist, including 25g of photosensitive polymer Q4 prepared in Example 1, 0.15g of photosensitive acid generator P2', 0.05g of acid diffusion terminator P3' and 0.01g of surfactant P4'. Among them, P2 contains 0.02g P2a', 0.05g P2b', 0.03g P2c', and P3 contains 0.01g P3a', 0.01g P3b', 0.03g P3c'.

[0124] The structural formula of P2a'-P2c' is as follows:

[0125]

[0126] The structural formula of P3a'-P3c' is as follows:

[0127]

[0128] The structural formula of P4' is as follows:

[0129]

[0130] The preparation method of ArFi photoresist, concrete operation steps are as follows:

[0131] Take 25g of the photosensitive polymer Q4 prepared in Example 1, adjust its contact angle from 114° to 36° by acid treatment, and dissolve it in ethyl lactate (ethyl lactate, EL) until the polymer concentration is about 5% mass concentration Then add 0.15g of photosensitive acid generator P2', 0.05g of acid diffusion terminator P3' and 0.01g of surfactant...

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Abstract

The invention belongs to the field of high polymer materials, and discloses a photosensitive polymer as well as a preparation method and application thereof. The photosensitive polymer comprises the following structural units: (1A) at least one structural unit capable of generating an acidic group through acid hydrolysis; (1B): at least one monomer structural unit capable of achieving pairing with olefin, vinyl ether or (meth)acrylate by acting force; and (1C): a structural unit having at least one cyclic group. According to the invention, the structure of the photosensitive polymer is optimized, so that the photosensitive polymer has good wettability, and the photoresist prepared from the photosensitive polymer has good compatibility with a coating material, can be applied to 193nm immersion lithography, and meets the resolution ratio of a semiconductor manufacturing process 45nm or less.

Description

technical field [0001] The invention belongs to the field of polymer materials, and in particular relates to a photosensitive polymer and its preparation method and application. Background technique [0002] Integrated circuit (integrated circuit, IC) is one of the most critical technologies in the information age. In the manufacture of integrated circuits, photopilthography is one of the key technologies. The improvement of chip functions is inseparable from the development of lithography materials and processes. [0003] Photolithography is a process of transferring a preset pattern on a mask to a substrate by photochemical reaction. In the photolithography process, photoresist (photo-resist) is the most critical material. The incident light passes through the mask, so that the pattern on the mask is projected onto the photoresist coated on the substrate, stimulates the photochemical reaction, and is baked and developed to form a photoresist pattern, and then the photore...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08F220/18C08F220/28C08F230/08G03F7/004
CPCC08F220/281C08F220/1807G03F7/004C08F230/085C08F220/1811C08F220/1812
Inventor 邓云祥钟春燕
Owner 珠海雅天科技有限公司
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