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Gas and pressure composite sensor and preparation method thereof

A composite sensor and pressure technology, applied in the direction of instruments, measuring devices, etc., can solve the problems of difficult temperature control, difficult to popularize and apply, increase chip power, etc., to avoid pressure measurement errors, reduce chip occupation area, and avoid measurement errors Effect

Pending Publication Date: 2021-12-10
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

H2SCAN company optimizes the control circuit, improves the temperature control accuracy, and increases the chip power to ensure the chip temperature is constant, so as to ensure the measurement accuracy. This method has high cost and high power consumption of the product, so the actual product price is high, and it is difficult in many fields. Promote application
[0004] At present, some domestic imitation H2SCAN hydrogen sensors have been launched, but there is a big gap between the measurement accuracy and reliability of foreign products, mainly in low temperature environments, due to the large heat dissipation of the chip and the difficulty of temperature control, resulting in low measurement accuracy. Improving the temperature control accuracy through circuit compensation and other methods will bring about a significant increase in cost
[0005] In addition, the domestic high-precision pressure sensing chip compensates the pressure-sensitive chip by packaging a temperature-sensitive resistor in the sensor core, measuring the ambient temperature of the core, and combining the characteristic drift of the pressure-sensitive chip at different temperatures. The solution requires an additional circuit chip for calculation and compensation to obtain low temperature drift performance. At the same time, because the temperature measurement chip and the pressure sensitive chip are integrated through the package, there is a physical gap, and there is a temperature difference in an environment with large temperature changes, which will cause the temperature sensor The measurement results are not the actual temperature results of the pressure-sensitive chip, resulting in differences in the pressure measurement results
At the same time, it needs to occupy a large volume through packaging and integration, and it is difficult to achieve miniaturization

Method used

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  • Gas and pressure composite sensor and preparation method thereof

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preparation example Construction

[0067] The present invention also discloses a method for preparing the above-mentioned gas and pressure composite sensor, comprising the steps of:

[0068] Perform P-type doping on the substrate (such as silicon wafer 1) to form a P-type doped region;

[0069] Deposit a gas sensitive resistor 13, a temperature measuring resistor 12 and a heating resistor 11 on a predetermined area on the front side of the silicon wafer 1, and deposit interconnection lines and pads 16;

[0070] Etching is performed on the back side of the silicon wafer 1 to form a strain chamber 8, and the position of the strain chamber 8 corresponds to a predetermined area on the front side of the silicon wafer 1;

[0071] The back side of the silicon wafer 1 and the bonding wafer 17 are anodically bonded in a vacuum environment to form a vacuum strain chamber 8 to obtain a final gas and pressure composite chip.

[0072] In a specific embodiment, the preparation of the gas sensitive resistor 13, the temperatu...

Embodiment 1

[0077] The preparation method of the air pressure composite sensor (abbreviation, gas and pressure composite sensor) of this embodiment, its preparation process flow chart is as follows figure 1 shown, including the following steps:

[0078] (1) On the surface of N(100) double parabolic silicon wafer 1, oxidize and grow implanted buffer protection layer 2, such as figure 1 As shown in (a), specifically: grow a silicon dioxide film on the surface of a silicon wafer by thermal oxidation, with a thickness of 50-500 Å; of course, dry oxidation, wet oxidation or CVD can also be used to prepare a silicon dioxide film. Silicon oxide film;

[0079] (2) The surface of the buffer protective layer 2 obtained in step (1) is subjected to photolithography and development to prepare the first implantation of the first barrier layer 3, exposing areas such as varistors, interconnection lines and pads 16, and using ion P-type doping is performed on regions such as top-layer varistors, interco...

Embodiment 2

[0092] The preparation method of the gas and pressure composite sensor of this embodiment, its preparation process is as follows Figure 5 shown, including the following steps:

[0093] 1) On the surface of the P(100) double-polished SOI sheet 18, oxidize and grow and inject the buffer protection layer 2, such as Figure 5 As shown in (a), specifically: grow a silicon dioxide film on the surface of the SOI sheet 18 by thermal oxidation, with a thickness of 50A-500A;

[0094] 2) In step 1), the front side of the SOI sheet 18 on which the implanted buffer protection layer 2 has been grown is subjected to ion implantation doping and annealing to form a P-type doped region 4, such as Figure 5 As shown in (b), the doping concentration of the P-type doped region 4 after annealing is 3×10 18 cm -3 ~3×10 20 cm -3 ;P-type substrate doping concentration is lower than 2×10 18 cm -3 ;

[0095] 3) Prepare the piezoresistive etching second barrier layer 20 by uniform photolithograp...

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Abstract

The invention discloses a gas and pressure composite sensor and a preparation method thereof. The sensor comprises a substrate and a bonding wafer, the front face of the substrate is provided with a P-type doped region, a gas sensitive resistor, a temperature measuring resistor and a heating resistor are deposited in a preset region of the front face of the substrate, a strain cavity is prepared in the back face of the substrate, the position of the strain cavity corresponds to a preset area on the front side of the substrate, and a strain film is arranged at the position, right facing the preset area, of the strain cavity; and the back surface of the substrate is bonded with the bonding sheet to form a vacuum strain cavity. The gas and pressure composite sensor has the advantages of high integration level, small size, high measurement precision and the like.

Description

technical field [0001] The invention mainly relates to the technical field of sensor preparation, in particular to a gas and pressure composite sensor and a preparation method thereof. Background technique [0002] With the development of intelligent manufacturing, hydrogen, as an important green new energy, is being used in more and more fields. Especially in recent years, the rapid development of hydrogen energy vehicles has put forward higher requirements for the detection of hydrogen leakage, which needs to be fast and accurate. Low-cost detection of hydrogen leaks. In addition, in transformers, with the continuous use of transformer oil, the hydrogen content in the oil will continue to increase. When it increases to a certain level, fire and explosion hazards may occur, so it is necessary to accurately detect the hydrogen content in the oil in real time. Regardless of hydrogen energy vehicles or transformers, there are high requirements for the accuracy and life of hyd...

Claims

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Application Information

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IPC IPC(8): G01D21/02
CPCG01D21/02
Inventor 谢贵久曾庆平丁玎何峰张浩金忠宋轶佶
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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