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Plasmon enhanced tellurium-cadmium-mercury microcavity infrared detector and preparation method thereof

A plasmon enhancement, infrared detector technology, applied in electrical components, semiconductor devices, final product manufacturing and other directions, to achieve the effect of improving infrared light absorption, reducing dark current, and increasing operating temperature

Pending Publication Date: 2021-12-10
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Purpose of the invention: Aiming at the above existing technologies, a plasmon-enhanced mercury cadmium telluride microcavity infrared detector is proposed to solve the problem that traditional high-performance mercury cadmium telluride detectors need to work under harsh conditions such as liquid nitrogen refrigeration, and A preparation method of plasmon-enhanced mercury cadmium telluride microcavity infrared detector is proposed

Method used

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  • Plasmon enhanced tellurium-cadmium-mercury microcavity infrared detector and preparation method thereof
  • Plasmon enhanced tellurium-cadmium-mercury microcavity infrared detector and preparation method thereof
  • Plasmon enhanced tellurium-cadmium-mercury microcavity infrared detector and preparation method thereof

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Embodiment 1

[0025] Such as figure 2 As shown, a plasmon-enhanced mercury cadmium telluride microcavity infrared detector includes silicon substrate 6, epoxy resin glue 5, gold reflective layer 4, cadmium telluride passivation layer 3, HgCdTe thin film 2, micro-nano structure 8 and electrode 9. Wherein, the thickness h of the micro-nano structure 8 1 is 60 nm, the thickness h of the metal reflective layer 2 is 120 nm, both of which are greater than the skin depth of gold by 10 nm; the thickness h of HgCdTe thin film 2 3 = 530 nm, refractive index n 3 = 3.43, the thickness h of the cadmium telluride passivation layer 3 4 = 300 nm, refractive index n 4 = 2.68; at this time, for the incident light with a detection wavelength of about 3.5 μm, n 3 h 3 +n 4 h 4 = 2621.9 ≈ 3λ / 4; the micro-nano structure 8 is a golden cross antenna array, such as image 3 As shown, the arm length of the golden cross antenna is 600 nm, the arm width is 120 nm, and the array period is 1.8 μm. The un...

Embodiment 2

[0037] Such as Figure 5 As shown, a plasmon-enhanced mercury cadmium telluride microcavity infrared detector, its structure includes silicon substrate, epoxy resin glue, gold reflective layer, 300 nm thick zinc sulfide passivation layer, 1100 nm thick HgCdTe films, micro-nano structures and electrodes. Among them, such as Figure 6 As shown, the micro-nano structure is a gold square periodic array. The gold square periodic array uses four squares with side lengths of 500 nm, 550 nm, 600 nm, and 650 nm as multiplexing structural units, and the multiplexing structural period is 3.6 μm. The unit detection area is 108 μm×129.6 μm, and the electrode size is 34 μm×34 μm. The structure and the infrared absorption spectrum of the 1100 nm thick HgCdTe thin film are as follows Figure 7 shown. The structure has a maximum photoresponsivity at a wavelength of 3.9 μm, and its dark current is reduced by more than 4 times compared with flat-film thin-film detectors with the same absorpt...

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Abstract

The invention discloses a plasmon enhanced tellurium-cadmium-mercury microcavity infrared detector and a preparation method thereof. The detector sequentially comprises a substrate, an insulating glue, a metal reflecting layer, a passivation layer, a tellurium-cadmium-mercury thin film, a micro-nano structure and an electrode from bottom to top, wherein the thickness of the tellurium-cadmium-mercury thin film is in a submicron level so as to reduce dark current during working, and the micro-nano structure, the tellurium-cadmium-mercury thin film, the passivation layer and the metal reflecting layer form a plasmon microcavity so as to greatly improve the infrared light absorption capacity of tellurium-cadmium-mercury. According to the invention, the structure has the characteristics of high absorption and low noise, can improve the working temperature of the tellurium-cadmium-mercury detector, and solves the problem that a traditional high-performance tellurium-cadmium-mercury infrared detector needs to work under harsh conditions such as liquid nitrogen refrigeration; and compared with the preparation of the tellurium-cadmium-mercury thin film on the epitaxial thick substrate, the preparation method provided by the invention realizes the preparation of the ultrathin sandwich structure of the micro-nano structure-tellurium-cadmium-mercury thin film-metal reflecting layer.

Description

technical field [0001] The invention relates to a mercury cadmium telluride infrared detector and a preparation method thereof. Background technique [0002] HgCdTe semiconductor material has the characteristics of high charge mobility, high quantum efficiency, fast response speed, adjustable band gap, etc., and has an irreplaceable position in the field of infrared detection. According to the Lambert-Beer law, the light absorption of a material is proportional to its thickness. However, as the thickness increases, the dark current increases significantly. Therefore, in order to obtain a high detection rate, the traditional HgCdTe detector needs to work under harsh conditions such as liquid nitrogen refrigeration, which has the advantages of high power consumption, large volume, high cost, and the use of The lifespan is limited by refrigeration equipment and other limitations, which is not conducive to the integration of super-large arrays at the focal plane, which greatly ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/101H01L31/18H01L31/0236B82Y15/00B82Y40/00B82Y30/00
CPCH01L31/02161H01L31/101H01L31/18H01L31/1868H01L31/02363B82Y15/00B82Y40/00B82Y30/00Y02P70/50
Inventor 朱利肖佳慧李晨昱吴建峰吕俊鹏崔一平
Owner SOUTHEAST UNIV
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