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Sb2Se3 film and preparation method and application thereof

A sb2se3, thin film technology, applied in the field of solar cells, can solve the problems of low photoelectric conversion efficiency of solar cells, and achieve the effect of reducing defect types and defect concentrations

Pending Publication Date: 2021-12-28
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, vapor transport deposition (VTD) pristinely deposited Sb 2 Se 3 The film exhibits a selenium-poor presence with a high concentration of V Se ,Sb Se isodepth level defects, which lead to existing Sb 2 Se 3 The photoelectric conversion efficiency of solar cells with thin films as photonic layers is low

Method used

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  • Sb2Se3 film and preparation method and application thereof
  • Sb2Se3 film and preparation method and application thereof
  • Sb2Se3 film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] a Sb 2 Se 3 The preparation method of thin film, comprises the following steps:

[0047] 1. Add Sb 2 Se 3 The powder was placed in a tube furnace with two temperature zones, and the initial Sb was prepared on the substrate by the vapor transport deposition method. 2 Se 3 film;

[0048] 2. Then the initial Sb 2 Se 3 The film was placed in a dual-temperature zone tube furnace with selenium powder placed in advance, and high-purity Ar gas was introduced into the dual-temperature zone tube furnace to stabilize the pressure in the furnace to 5×10 4 Pa, heat treatment at 420°C for 20 minutes in the dual temperature zone tube furnace to promote the initial Sb 2 Se 3 Film recrystallization and re-growth to produce high-quality Sb with closely packed micron-sized grains, benign grain boundaries, and high carrier mobility direction-preferential orientation growth 2 Se 3 film.

[0049] The Sb that comparative example 1 and embodiment 1 make respectively 2 Se 3 Film p...

Embodiment 2

[0051] a Sb 2 Se 3 The preparation method of thin film, comprises the following steps:

[0052] 1. Add Sb 2 Se 3 The powder was placed in a tube furnace with two temperature zones, and the initial Sb was prepared on the substrate by the vapor transport deposition method. 2 Se 3 film;

[0053] 2. Then the initial Sb 2 Se 3 The film is placed in a dual-temperature zone tube furnace with selenium powder placed in advance, and high-purity helium is introduced into the dual-temperature zone tube furnace to stabilize the pressure in the furnace to 6×10 4 Pa, heat treatment at 480°C for 25 minutes in the dual temperature zone tube furnace to promote the initial Sb 2 Se 3 Film recrystallization and re-growth to produce high-quality Sb with closely packed micron-sized grains, benign grain boundaries, and high carrier mobility direction-preferential orientation growth 2 Se 3 film.

Embodiment 3

[0055] a Sb 2 Se 3 The preparation method of thin film, comprises the following steps:

[0056] 1. Add Sb 2 Se 3 The powder was placed in a tube furnace with two temperature zones, and the initial Sb was prepared on the substrate by the vapor transport deposition method. 2 Se 3 film;

[0057] 2. Then the initial Sb 2 Se 3 The film is placed in a dual-temperature zone tube furnace with selenium powder placed in advance, and high-purity helium is introduced into the dual-temperature zone tube furnace to stabilize the pressure in the furnace to 4×10 4 Pa, heat treatment at 400°C for 15 minutes in the dual temperature zone tube furnace to promote the initial Sb 2 Se 3 Film recrystallization and re-growth to produce high-quality Sb with closely packed micron-sized grains, benign grain boundaries, and high carrier mobility direction-preferential orientation 2 Se 3 film.

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Abstract

The invention discloses a Sb2Se3 thin film and a preparation method and an application thereof. The preparation method comprises the steps that Sb2Se3 powder serves as a raw material, and an initial Sb2Se3 thin film is prepared through a vapor transport deposition method; and the initial Sb2Se3 thin film is placed in a closed cavity where selenium powder is placed in advance, heating treatment is conducted on the closed cavity at the temperature of 400-500 DEG C under the inert atmosphere, recrystallization growth is conducted on the initial Sb2Se3 thin film, and the Sb2Se3 thin film is prepared. The initial Sb2Se3 thin film is subjected to selenylation heat treatment to promote recrystallization and regrowth of the thin film, so that the components of the obtained thin film approach the standard stoichiometric ratio (Sb: Se = 2: 3), the deep energy level defect type and defect concentration are effectively reduced, improvement of the quality of the Sb2Se3 thin film is benefited, the Sb2Se3 thin film is used for preparing an absorption layer of a solar cell, the photoelectric conversion efficiency PCE of the solar cell can be improved from 2.06% to 7.24%, and the open-circuit voltage Voc can be improved from 329 mV to 513 mV.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a Sb 2 Se 3 Thin film and its preparation method and application. Background technique [0002] Energy is an important material basis for the survival and development of human society, and the basic guarantee for the normal operation of modern city functions. In the diversified energy structure, solar energy is regarded as an important renewable clean energy. As one of the main ways of its application, solar cells can directly convert solar energy into electrical energy based on the photovoltaic effect of semiconductor p-n junctions. There are many types of solar cells reported so far, among which thin-film solar cells have become a research hotspot due to their advantages such as less material consumption, low production energy consumption, high power output, and product flexibility. Representative thin-film solar cells such as copper indium gallium selenide (CIGS), cadm...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/58H01L31/032H01L31/0445
CPCC23C14/0623C23C14/5806H01L31/032H01L31/0445Y02E10/50
Inventor 陈烁陈名东梁广兴
Owner SHENZHEN UNIV
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