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Method for welding brittle target material assembly

A technology of target material and brittleness, which is applied in welding equipment, semiconductor devices, circuits, etc., can solve the problems of difficult infiltration of target material, inability to perform high-temperature and high-pressure welding, and low welding strength, so as to achieve simple operation, low cost, and guaranteed The effect of welding pass rate

Pending Publication Date: 2022-01-14
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the traditional brazing in the existing technology, it is not easy to infiltrate the target material, and compared with other metal targets, the brittle target material cannot be welded at high temperature and high pressure, the welding strength is low, it is fragile, and it is easy to generate dust and impurities. Solving problems such as welding pass rate, the present invention proposes a welding method for brittle target components, using glue welding method, using high temperature resistant and conductive glue for welding, and cleaning the oxygen-free copper backplane with cleaning solution and ultrasonic wave for three times before welding , combined with three times of heating and heat preservation during the welding process, to ensure the strength and pass rate of the welding

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  • Method for welding brittle target material assembly
  • Method for welding brittle target material assembly
  • Method for welding brittle target material assembly

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Embodiment 1

[0063] This embodiment provides a method for welding a brittle target assembly, the method comprising the following steps:

[0064] (1) Use analytically pure stearic acid and ultrasonic waves to clean the oxygen-free copper backplane in turn for 5 minutes, analyze pure aviation kerosene and ultrasonic waves for 10 minutes to clean the second stage, and analyze pure isopropylamine and ultrasonic waves for 10 minutes. segment cleaning;

[0065] (2) Dip the cleaning cloth with analytically pure ethanol to wipe the impurities on the surface of the ceramic target;

[0066] (3) Apply conductive glue on the cleaned oxygen-free copper back plate and one side of the ceramic target after surface cleaning, the conductive glue is configured with phenolic resin and copper powder at a mass ratio of 1:2, and the ceramic target The adhesive-coated surface of the ceramic target is fastened to the adhesive-coated surface of the oxygen-free copper back plate, the pressure block is placed on the...

Embodiment 2

[0068] This embodiment provides a method for welding a brittle target assembly, the method comprising the following steps:

[0069] (1) Use analytically pure stearic acid and ultrasonic waves to clean the oxygen-free copper backplane in turn for 4 minutes, analyze pure aviation kerosene and ultrasonic waves for 10 minutes to clean the second stage, and analyze pure isopropylamine and ultrasonic waves for 8 minutes. segment cleaning;

[0070] (2) Dip the clean cloth with analytically pure ethanol to wipe the impurities on the surface of the silicon alloy target;

[0071] (3) Smear conductive glue on one side of the oxygen-free copper backplane after cleaning and the silicon alloy target after surface cleaning, the conductive glue is configured with phenolic resin and copper powder at a mass ratio of 1:2, and the silicon alloy The glue-coated surface of the target is fastened to the glue-coated surface of the oxygen-free copper back plate, the pressure block is placed on the no...

Embodiment 3

[0073] This embodiment provides a method for welding a brittle target assembly, the method comprising the following steps:

[0074] (1) Use analytically pure stearic acid and ultrasonic waves to clean the oxygen-free copper backplane for 6 minutes, analyze pure aviation kerosene and ultrasonic waves for 8 minutes, and analyze pure isopropylamine and ultrasonic waves for 12 minutes. segment cleaning;

[0075] (2) Dip the cleaning cloth with analytically pure ethanol to wipe the impurities on the surface of the ceramic target;

[0076] (3) Apply conductive glue on the cleaned oxygen-free copper back plate and one side of the ceramic target after surface cleaning, the conductive glue is configured with phenolic resin and copper powder at a mass ratio of 1:2, and the ceramic target The adhesive-coated surface of the ceramic target is fastened to the adhesive-coated surface of the oxygen-free copper back plate, and the pressure block is placed on the non-adhesive surface of the ce...

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Abstract

The invention provides a method for welding a brittle target material assembly. The method comprises the following steps that (1) an oxygen-free copper back plate is cleaned sequentially by the aid of a cleaning solution matched with ultrasonic waves; (2) the surface of the brittle target material is cleaned; (3) the conductive adhesive is smeared on the single side of the cleaned oxygen-free copper back plate and the single side of the brittle target material with the surface cleaned, the adhesive-coated surface of the brittle target material is buckled to the adhesive-coated surface of the oxygen-free copper back plate, a pressing block is placed on the non-adhesive-coated surface of the brittle target material to be pressurized, then three-section temperature rising-heat preservation is carried out, and furnace cooling is carried out. According to the method, the conductive adhesive is adopted for conducting three-section temperature rising-heat preservation and furnace cooling for welding, the welding strength of the brittle target material is improved through simple and energy-saving process steps, the cleaning liquid is matched with the ultrasonic waves to clean the oxygen-free copper back plate before welding, surface oil stains, rust and impurities are fully removed, and the welding qualification rate is increased.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, in particular to a method for welding brittle target components. Background technique [0002] In the semiconductor field, the target component is a commonly used material, and the target component is welded together by the target and the back plate. In recent years, with the rapid development of the integrated circuit industry, the demand for target materials is also increasing. At present, the market is still dominated by metal or alloy targets, and most of the target welding experience is based on them. Common welding methods for target components include brazing and diffusion welding. Due to the material characteristics of brittle targets, brazing is often used for welding, but due to the fragile material characteristics, and the welding surface of the target is prone to dust, it is difficult to infiltrate, resulting in poor welding pass rate, which in turn affects the t...

Claims

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Application Information

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IPC IPC(8): B23K1/00B23K1/20B23K101/40
CPCB23K1/206B23K1/0008B23K2101/40
Inventor 姚力军潘杰边逸军王学泽汤婷
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD