Method for welding brittle target material assembly
A technology of target material and brittleness, which is applied in welding equipment, semiconductor devices, circuits, etc., can solve the problems of difficult infiltration of target material, inability to perform high-temperature and high-pressure welding, and low welding strength, so as to achieve simple operation, low cost, and guaranteed The effect of welding pass rate
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Embodiment 1
[0063] This embodiment provides a method for welding a brittle target assembly, the method comprising the following steps:
[0064] (1) Use analytically pure stearic acid and ultrasonic waves to clean the oxygen-free copper backplane in turn for 5 minutes, analyze pure aviation kerosene and ultrasonic waves for 10 minutes to clean the second stage, and analyze pure isopropylamine and ultrasonic waves for 10 minutes. segment cleaning;
[0065] (2) Dip the cleaning cloth with analytically pure ethanol to wipe the impurities on the surface of the ceramic target;
[0066] (3) Apply conductive glue on the cleaned oxygen-free copper back plate and one side of the ceramic target after surface cleaning, the conductive glue is configured with phenolic resin and copper powder at a mass ratio of 1:2, and the ceramic target The adhesive-coated surface of the ceramic target is fastened to the adhesive-coated surface of the oxygen-free copper back plate, the pressure block is placed on the...
Embodiment 2
[0068] This embodiment provides a method for welding a brittle target assembly, the method comprising the following steps:
[0069] (1) Use analytically pure stearic acid and ultrasonic waves to clean the oxygen-free copper backplane in turn for 4 minutes, analyze pure aviation kerosene and ultrasonic waves for 10 minutes to clean the second stage, and analyze pure isopropylamine and ultrasonic waves for 8 minutes. segment cleaning;
[0070] (2) Dip the clean cloth with analytically pure ethanol to wipe the impurities on the surface of the silicon alloy target;
[0071] (3) Smear conductive glue on one side of the oxygen-free copper backplane after cleaning and the silicon alloy target after surface cleaning, the conductive glue is configured with phenolic resin and copper powder at a mass ratio of 1:2, and the silicon alloy The glue-coated surface of the target is fastened to the glue-coated surface of the oxygen-free copper back plate, the pressure block is placed on the no...
Embodiment 3
[0073] This embodiment provides a method for welding a brittle target assembly, the method comprising the following steps:
[0074] (1) Use analytically pure stearic acid and ultrasonic waves to clean the oxygen-free copper backplane for 6 minutes, analyze pure aviation kerosene and ultrasonic waves for 8 minutes, and analyze pure isopropylamine and ultrasonic waves for 12 minutes. segment cleaning;
[0075] (2) Dip the cleaning cloth with analytically pure ethanol to wipe the impurities on the surface of the ceramic target;
[0076] (3) Apply conductive glue on the cleaned oxygen-free copper back plate and one side of the ceramic target after surface cleaning, the conductive glue is configured with phenolic resin and copper powder at a mass ratio of 1:2, and the ceramic target The adhesive-coated surface of the ceramic target is fastened to the adhesive-coated surface of the oxygen-free copper back plate, and the pressure block is placed on the non-adhesive surface of the ce...
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