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Quantum dot light- emitting diode and preparation method and application thereof

A quantum dot light-emitting and diode technology, which is applied in the direction of diodes, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of difficult design of key structural charge generation layers, high preparation process requirements, and high turn-on voltage. Industrial application, excellent photoelectric performance, and life-enhancing effect

Pending Publication Date: 2022-01-14
WUYI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the design of the charge generation layer of the key structure of this method is difficult at present, and the requirements for the preparation process are very high, so it has great limitations.
In addition, the quantum dot light-emitting diode with this structure also faces the problem of too high turn-on voltage and low brightness.

Method used

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  • Quantum dot light- emitting diode and preparation method and application thereof
  • Quantum dot light- emitting diode and preparation method and application thereof
  • Quantum dot light- emitting diode and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0084] A quantum dot light-emitting diode, comprising a first anode, a first hole injection layer, a first hole transport layer, a first quantum dot light-emitting layer, a first electron transport layer, a cathode, a second electron transport layer, The second quantum dot light-emitting layer, the second hole transport layer, the second hole injection layer and the second anode.

[0085] Wherein: the material of the first anode is indium tin oxide, and the thickness is 120nm;

[0086] The material of the first hole injection layer is poly-3,4-ethylenedioxythiophene and polystyrene sulfonate, and the thickness is 40nm;

[0087] The material of the first hole transport layer is poly-9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine (TFB), and the thickness is 30nm;

[0088] The material of the first quantum dot light-emitting layer is red light quantum dots with CdZnSe / CdZnS / ZnS core-shell structure, and the thickness is 20nm;

[0089] The material of the first electron t...

Embodiment 2

[0128] The structure and preparation method of the quantum dot light-emitting diode of embodiment 2 and embodiment 1 are basically the same, the difference is: the material of the first quantum dot light-emitting layer of embodiment 2 is the blue light quantum dot of CdZnSe / ZnSeS / ZnS core-shell structure , with a thickness of 20nm; the thickness of the cathode is 5nm, and finally a back-to-back series quantum dot light-emitting diode with two-color emission of blue light and red light is prepared.

Embodiment 3

[0130] The structure and preparation method of the quantum dot light-emitting diode of embodiment 3 and embodiment 1 are basically the same, the difference is: the first quantum dot luminescent material of embodiment 3 is the green light quantum dot of CdZnSeS / ZnS core-shell structure, and film thickness is 20nm; the thickness of the cathode is 5nm, and finally a back-to-back series quantum dot light-emitting diode with two-color emission of green light and red light is prepared.

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Abstract

The invention specifically discloses a quantum dot light-emitting diode and a preparation method and application thereof. The quantum dot light-emitting diode comprises a first anode, a first light-emitting unit, a cathode, a second light-emitting unit and a second anode which are stacked in sequence; the first light-emitting unit and the second light-emitting unit are mirror phase structures of each other and share a cathode; and the preparation method comprises the following steps: sequentially stacking the first anode, the first light-emitting unit, the cathode, the second light-emitting unit and the second anode by adopting a deposition method, according to the quantum dot light-emitting diode, the two light-emitting units are connected in series in a back-to-back mode, the two light-emitting units share one cathode, the utilization rate of electrons and holes is greatly improved, the photoelectric property is improved, the quantum dot light-emitting diode has 2.2 V ultralow turn-on voltage, the brightness can reach 86550cd m <-2 > at 8V, CIE chromaticity coordinates are not obviously changed under driving of different voltages, and a stable electroluminescent spectrum is shown.

Description

technical field [0001] The invention belongs to the technical field of light emitting diodes, and in particular relates to a quantum dot light emitting diode and its preparation method and application. Background technique [0002] Quantum dot light-emitting diodes (QLED, Quantum Dot Light-Emitting Diodes) have received more and more attention in recent years due to their characteristics such as adjustable emission color, narrow half-peak width, low solution processing cost, high efficiency and good stability. Attention, is considered to be one of the best candidate devices for next-generation display and lighting. At present, research on the optimization design of materials and device structures is focused on monochromatic luminescence, and polychromatic luminescence is mainly achieved through three methods, but there are problems such as unstable emission spectrum, high turn-on voltage and low brightness, short working life, and complex structure of series devices. A seri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52H01L27/32H01L51/56
CPCH10K59/86H10K50/115H10K50/81H10K50/82H10K71/00
Inventor 刘伯臣陈钊郭月吴文海
Owner WUYI UNIV