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A kind of high quality ilmenite structure zinc metatitanate single crystal thin film and its preparation method and application

A technology of zinc metatitanate and single crystal thin film, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem of rarely considering the lattice mismatch between the film and the substrate, and has not yet seen zinc metatitanate Single crystal thin film materials, lack of semiconductor optoelectronic properties and other problems, to achieve the effect of less defects, complete lattice arrangement, and complete lattice structure

Active Publication Date: 2022-07-19
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] (1) Most of the zinc metatitanate materials currently prepared are powder, nanostructure and polycrystalline film. The crystal phase of the material is often mixed-phase polycrystalline and single-phase polycrystalline structure, and there are problems such as poor crystal quality and many defects.
So far, there has been no report on zinc metatitanate single crystal thin film materials
[0006] (2) The research on zinc metatitanate mostly improves the photocatalytic performance and dielectric performance of the material, but lacks the research on its semiconductor photoelectric properties
The currently reported substrate materials for growing zinc metatitanate films are SiO 2 / Si and ITO substrates, little consideration is given to the lattice mismatch between the film and the substrate

Method used

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  • A kind of high quality ilmenite structure zinc metatitanate single crystal thin film and its preparation method and application
  • A kind of high quality ilmenite structure zinc metatitanate single crystal thin film and its preparation method and application
  • A kind of high quality ilmenite structure zinc metatitanate single crystal thin film and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] with LiNbO 3 (006) is the substrate, 99.99% of the ceramic target is used as the target material, and the zinc metatitanate thin film is prepared by the PLD technology.

[0063] Proceed as follows:

[0064] (1) The clean LiNbO 3 (006) The substrate and the zinc metatitanate target are respectively placed at the positions of the substrate and the target in the reaction chamber, and the reaction chamber is closed. Turn on the molecular pump and pump the reaction chamber to a high vacuum, the vacuum degree is 8.5×10 -5 Pa, the substrate base is heated to 700°C;

[0065] (2) Open the high-purity oxygen bottle, feed oxygen into the reaction chamber, control the oxygen flow rate to 20sccm with a gas flow meter, adjust the valve of the reaction chamber, stabilize the pressure of the reaction chamber at 5Pa, and keep it for 30 minutes;

[0066] (3) Turn on the laser, adjust the laser to the energy stable mode, the single pulse energy is 200mJ, the burst length is 20ns, and ...

Embodiment 2

[0074] Preparation of ZnTiO by PLD Technology 3 The single crystal thin film, the used target and substrate and the preparation process are the same as those in Example 1, the difference is that the substrate temperature is 650°C. ZnTiO prepared in this example 3 The film has a single epitaxial orientation of the (003) crystal plane, but compared with Example 1, ZnTiO 3 The diffraction peak intensity of the (003) crystal plane decreased, and the full width at half maximum also increased, indicating that the quality of the thin film single crystal prepared at the substrate temperature decreased.

Embodiment 3

[0076] Preparation of ZnTiO by PLD Technology 3 The single crystal thin film, the used target material and substrate, and the preparation process are the same as those in Example 1, except that the substrate temperature is 750°C. ZnTiO prepared in this example 3 The film has a single epitaxial orientation of the (003) crystal plane. Compared with Example 1, the changes of the diffraction peak intensity and peak width of the (003) crystal plane of the film all indicate that the crystal quality of the film decreases.

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Abstract

The invention relates to a high-quality ilmenite structure zinc metatitanate single crystal thin film and a preparation method and application thereof. The chemical composition of the thin film is zinc metatitanate and a hexagonal ilmenite structure single crystal material. Using zinc metatitanate target as raw material, it is prepared in the substrate by pulsed laser deposition. The zinc metatitanate single crystal thin film of the invention has complete lattice arrangement, few defects, no twin crystal structure, and the relative average transmittance in the visible light region can reach more than 95%, and has wide application prospects in the field of transparent optoelectronic devices.

Description

technical field [0001] The invention relates to a high-quality ilmenite structure zinc metatitanate single crystal thin film and a preparation method thereof, belonging to the technical field of semiconductor optoelectronic materials. Background technique [0002] In recent years, with the continuous development of semiconductor technology, wide band gap oxide semiconductor materials have become one of the research hotspots. Ternary oxide zinc metatitanate (ZnTiO 3 ) is a widely used functional material, which has the advantages of both zinc oxide and titanium oxide, and has excellent optoelectronic properties, so it is a potential oxide semiconductor material. Zinc metatitanate has two structures of cubic and hexagonal ilmenite. The band gap width of zinc metatitanate at room temperature is about 3.2-3.7 eV, which is a wide bandgap semiconductor material. ZnTiO 3 Due to its excellent optoelectronic properties and high specific surface area, it has potential applications ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/32C30B23/02
CPCC30B29/32C30B23/025C30B23/002
Inventor 栾彩娜马瑾张彪
Owner SHANDONG UNIV
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