Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

LED epitaxial wafer manufacturing method

A technology of LED epitaxial wafers and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of hindering LED performance, affecting LED energy saving effect, and low quality of LED epitaxial materials, so as to improve the photoelectric performance and prevent defects. The effect of formation and improvement of crystal quality

Active Publication Date: 2022-01-25
XIANGNENG HUALEI OPTOELECTRONICS
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the quality of LED epitaxial materials prepared by the existing LED epitaxial wafer production method is not high, which seriously hinders the improvement of LED performance and affects the energy-saving effect of LED.
[0004] In summary, there is an urgent need to develop a new LED epitaxial wafer manufacturing method to solve the problem of low quality of existing LED epitaxial materials, thereby improving the photoelectric performance of LEDs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • LED epitaxial wafer manufacturing method
  • LED epitaxial wafer manufacturing method
  • LED epitaxial wafer manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] This embodiment adopts the LED epitaxial wafer manufacturing method provided by the present invention, adopts MOCVD to grow GaN-based LED epitaxial wafers, and uses high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) was used as the gallium source, trimethylindium (TMIn) was used as the indium source, and the n-type dopant was silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the reaction pressure is between 70mbar and 600mbar. The specific growth method is as follows (for the epitaxial structure, please refer to figure 1 ):

[0043] A method for manufacturing an LED epitaxial wafer, which sequentially includes: processing a sapphire substrate 1, growing a low-temperature GaN buffer layer 2, growing a non-doped GaN layer 3, growing a Si-doped n-type GaN layer ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an LED epitaxial wafer manufacturing method, and the method sequentially comprises the steps: processing a substrate, growing a low-temperature GaN buffer layer, growing a non-doped GaN layer, growing a Si-doped n-type GaN layer, growing a multi-quantum well layer, growing an AlGaN electron blocking layer, growing a Mg-doped P-type GaN layer, and carrying out the cooling, wherein the growth of the multi-quantum well layer sequentially comprises: Al pre-paving treatment, AlN layer growth, InGaN well layer growth, GaN barrier layer growth and H2 treatment. According to the invention, the novel LED epitaxial wafer manufacturing method is adopted to improve the quality of the epitaxial material, so that the photoelectric property of the LED is improved.

Description

technical field [0001] The invention belongs to the technical field of LEDs, and in particular relates to a method for manufacturing LED epitaxial wafers. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic device that converts electrical energy into light energy. When the LED has current flowing, the electrons and holes in the LED recombine in its multiple quantum wells to emit monochromatic light. As a new type of high-efficiency, environmentally friendly and green solid-state lighting source, LED has the advantages of low voltage, low energy consumption, small size, light weight, long life, high reliability and rich colors. [0003] The quality of the LED epitaxial material prepared by the existing LED epitaxial wafer manufacturing method is not high, which seriously hinders the improvement of the performance of the LED and affects the energy-saving effect of the LED. [0004] To sum up, there is an urgent need ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/14H01L33/32
CPCH01L33/0075H01L33/06H01L33/145H01L33/32Y02P70/50
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com