High-density ceramic-based composite material and preparation method thereof
A composite material and ceramic-based technology, applied in the field of high-density ceramic-based composite materials and preparation, can solve the problems of insignificant effect, reduce the porosity of C/SiC composite materials, and reduce the porosity, so as to reduce the porosity and improve the porosity. Comprehensive performance and service life, the effect of improving bending strength
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[0015] As described above, the present invention provides a method of preparing a highly density ceramic matrix composite material in the first aspect, the method comprising the steps of:
[0016] (1) The ceramic matrix composite material prepared by the PIP process is provided;
[0017] (2) Dilute polysili alkase using an organic solvent to obtain Si 3 N 4 Precursor solution;
[0018] (3) Adopting the Si 3 N 4 The precursor solution is sequentially impregnated, cured, and lysis step as a dipping liquid, to obtain a high-density ceramic matrix composite material.
[0019] In the present invention, the ceramic matrix composite material may, for example, a carbon fiber reinforced silicon carbide ceramic matrix composite (C / SiC ceramic matrix composite), carbon fiber reinforced silicon carbide-carbide ceramic matrix composite material (C / SiC-Zrc ceramic) Basic composite material); a ceramic matrix composite material prepared by a PIP method (prior disc transformation method) proc...
Embodiment 1
[0037] ① carbon fiber needled preform structure through PIP-SiC based process to obtain C / SiC composites.
[0038] ② After preparing molten silicon infiltration process conducted on the reaction process C / SiC composite material for processing, ultrasonic cleaning and dried after use. After cleaning the semifinished C / SiC composite density of 2.10g / cm 3 .
[0039] ③ using an organic solvent diluted with xylene Si3N4 precursor (polysilazane), prepared at a concentration of 20wt% of Si 3 N 4 Precursor solution.
[0040] ④ semifinished C / SiC composite Si3N4 impregnated precursor solution, the first vacuum impregnation, vacuum pressure gauge displaying ≤-0.095MPa, then the impregnation pressure, the pressure is 2.0MPa; followed by curing, curing temperature is 200 ℃, cure time was 3 hours; and finally in a nitrogen atmosphere for 6 hours 1000 ℃ cleavage.
[0041] Repeat step ④ ⑤ once, the optimized C / SiC composite, a density of 2.14g / cm 3 .
[0042] The resulting semifini...
Embodiment 2
[0044] In Example 1 using substantially the same manner, except that Si was diluted with an organic solvent of xylene 3 N 4 Precursor (polysilazane), prepared at a concentration of 5wt% of Si 3 N 4 Precursor solution.
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