Method for multi-arc ion plating of titanium film on surface of AlN ceramic matrix

A multi-arc ion plating and ceramic substrate technology, applied in the field of surface coating, can solve the problems of uneven adhesion and low nickel plating layer, and achieve the effects of good protection, enhanced bonding effect, and good electrical properties

Pending Publication Date: 2022-01-28
东莞市烽元科技有限公司 +1
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

The Chinese patent with the application number 201910422615.6 discloses a method of nickel plating on the surface of AlN ceramics. This technology adopts the method of electroplating nickel to plate a nickel layer with a thickness of 2-2.5 μm on the surface of AlN ceramics, which overcomes the nickel plating caused by the existing process. The layer is uneven and the adhesion is not high, which affects the defects of the ceramic sealing effect. Compared with the existing technology, the nickel layer has no defects, and the reliability of the product is better
At present, the technology of depositing metal titanium film on the surface of AlN ceramic substrate by multi-arc ion plating method has never been reported. and wear resistance

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  • Method for multi-arc ion plating of titanium film on surface of AlN ceramic matrix

Examples

Experimental program
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Effect test

Embodiment 1

[0022] A method for multi-arc ion plating titanium film on the surface of an AlN ceramic substrate, comprising the following steps:

[0023] (1) Sample treatment: ultrasonically clean the AlN ceramic substrate in acetone for 10 minutes, then ultrasonically clean it twice with ethanol, take it out and dry it;

[0024] (2) Equipment preparation: a multi-arc ion coating machine is used, two Al and Ti simple substance targets with a purity of 99.99% are selected, and the working gas is Ar gas with a purity of 99.99%.

[0025] (3) Put the sample processed in step (1) into the furnace, and pump the air pressure in the vacuum chamber to 1.6×10 -4 Pa, filled with argon sputtering gas, ion bombardment for 10min, argon gas flow rate 25ccm, sputtering pressure 2.0Pa, anode filament input power 1000W, turn on auxiliary heating, and raise the temperature to 400°C.

[0026] (4) Deposition of Al transition layer: Turn on the power supply of the multi-arc ion plating Al target, adjust the sp...

Embodiment 2

[0034] A method for multi-arc ion plating titanium film on the surface of an AlN ceramic substrate, comprising the following steps:

[0035] (1) Sample treatment: ultrasonically clean the AlN ceramic substrate in acetone for 10 minutes, then ultrasonically clean it twice with ethanol, take it out and dry it;

[0036] (2) Equipment preparation: a multi-arc ion coating machine is used, two Al and Ti simple substance targets with a purity of 99.99% are selected, and the working gas is Ar gas with a purity of 99.99%.

[0037] (3) Put the sample processed in step (1) into the furnace, and pump the air pressure in the vacuum chamber to 1.6×10 -4 Pa, filled with argon sputtering gas, ion bombardment for 10min, argon gas flow rate 10sccm, sputtering pressure 1.0Pa, anode filament input power 200W, turn on auxiliary heating, and raise the temperature to 400°C.

[0038] (4) Deposition of Al transition layer: Turn on the power supply of the multi-arc ion plating Al target, adjust the sput...

Embodiment 3

[0046] A method for multi-arc ion plating titanium film on the surface of an AlN ceramic substrate, comprising the following steps:

[0047] (1) Sample treatment: ultrasonically clean the AlN ceramic substrate in acetone for 10 minutes, then ultrasonically clean it twice with ethanol, take it out and dry it;

[0048] (2) Equipment preparation: use a multi-arc ion coating machine, select three Al and Ti simple substance targets with a purity of 99.99%, and use Ar gas with a purity of 99.99% as the working gas.

[0049] (3) The sample treated in step (1) is put into the furnace, and the air pressure in the vacuum chamber is pumped to 1.5×10 -3 Pa, filled with argon sputtering gas, ion bombardment for 10min, argon gas flow rate 15sccm, sputtering pressure 1.7Pa, anode input filament power 700W, turn on auxiliary heating, and raise the temperature to 400°C.

[0050] (4) Deposit the Al transition layer: turn on the power supply of the multi-arc ion plating Al target, adjust the sp...

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Abstract

The invention relates to a method for depositing a titanium film on the surface of AlN ceramic by multi-arc ion plating, which is characterized in that a titanium film layer is deposited on AlN by adjusting process conditions such as pressure intensity, temperature, time and power of working gas. A metal film layer with good film-substrate binding force, conductivity and wear resistance is prepared by using the method, the film layer is uniform and compact in structure, high in binding strength with a substrate and high in hardness, and meanwhile, the film layer has good electrical properties and can provide important reference basis for AlN surface modification.

Description

technical field [0001] The invention belongs to the technical field of surface coatings, in particular to a method for multi-arc ion titanium coating on the surface of an AlN ceramic substrate. Background technique [0002] AlN is a ceramic material with high hardness, high chemical stability, high temperature resistance, corrosion resistance, wear resistance, good insulation, etc., and is widely used in industry. In order to make AlN ceramics more widely used, it must be metallized to form a compound or alloy with strong bonding ability on the surface of the ceramics, so that there is a strong adhesion between the metal material and the ceramics. When using AlN to directly prepare ceramic-metal composites, how to avoid the interface reaction between AlN and the base metal at high temperature is to add Ni, Ti and other elements to AlN, which can help to solve the above problems. The metallized film on the surface of ceramics not only has good mechanical properties such as h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/32C23C14/18C23C14/58C23C14/02
CPCC23C14/325C23C14/185C23C14/025C23C14/5893C23C14/5846
Inventor 何霞文李杨张尚洲叶倩文毕永洁王政伟李永康邵明昊郭恒蛟
Owner 东莞市烽元科技有限公司
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