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Composition for forming resist underlayer film capable of wet etching, containing heterocyclic compound having dicyanostyryl group

A technology of dicyanostyrene and resist lower layer, which is applied in the direction of organic chemistry, photographic process of pattern surface, photosensitive material used in optomechanical equipment, etc. (Epoxy) resin and other problems, to achieve the effect of good resistance

Pending Publication Date: 2022-01-28
NISSAN CHEM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] However, there is no disclosure of poly(epoxide) resins having epoxy functionality above 10, nor is there any disclosure of epoxy compounds comprising heterocyclic compounds

Method used

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  • Composition for forming resist underlayer film capable of wet etching, containing heterocyclic compound having dicyanostyryl group
  • Composition for forming resist underlayer film capable of wet etching, containing heterocyclic compound having dicyanostyryl group
  • Composition for forming resist underlayer film capable of wet etching, containing heterocyclic compound having dicyanostyryl group

Examples

Experimental program
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Effect test

Embodiment

[0213] Next, the content of the present invention will be described concretely with reference to examples, but the present invention is not limited thereto.

[0214] The apparatus etc. used for the measurement of the weight average molecular weight of the polymer obtained in the following synthesis example are shown.

[0215] Device: HLC-8320GPC manufactured by Tosoh Corporation

[0216] GPC column: Shodex〔registered trademark〕Asahipak〔registered trademark〕(Showa Denko Co., Ltd.)

[0217] Column temperature: 40°C

[0218] Flow: 0.35mL / min

[0219] Eluent: Tetrahydrofuran (THF)

[0220] Standard sample: Polystyrene (Tosoh Corporation)

[0221]

[0222] Triazine type epoxy compound (product name: TEPIC, manufactured by Nissan Chemical Co., Ltd., epoxy functionality: 10.03eq. / kg) 10.00g, 4-hydroxybenzaldehyde 12.25g, tetrabutyl bromide 0.85 g and 53.90 g of propylene glycol monomethyl ether were added to the reaction flask, and heated to reflux for 23 hours under a nitrog...

Embodiment 2

[0240] To 7.56 g of a solution (solid content: 23.9% by weight) of the reaction product corresponding to the above-mentioned formula (A-2), 0.27 g of tetramethoxymethyl glycoluril as a crosslinking agent and 0.27 g of tetramethoxymethyl glycoluril as a crosslinking catalyst were added pyridine - 0.02 g of p-toluenesulfonate, 13.78 g of propylene glycol monomethyl ether, and 8.37 g of propylene glycol monomethyl ether acetate were used to prepare a solution of a composition for forming a resist underlayer film.

Embodiment 3

[0242] 3,3',5,5'-Tetrakis(methoxymethyl) was added as a crosslinking agent to 6.96 g of a solution (solid content: 23.9% by weight) corresponding to the reaction product of the above formula (A-2). base)-4,4'-dihydroxybiphenyl (product name: TMOM-BP, manufactured by Honshu Chemical Industry Co., Ltd.) 0.42 g, pyridine as a crosslinking catalyst - 0.02 g of p-toluenesulfonate, 14.23 g of propylene glycol monomethyl ether, and 8.37 g of propylene glycol monomethyl ether acetate were used to prepare a solution of a composition for forming a resist underlayer film.

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Abstract

A resist underlayer film is provided which, while exhibiting excellent resistance to a resist developer which is a resist solvent or an alkaline aqueous solution, exhibits removability, and preferably solubility, only in wet etching chemicals. This composition for forming a resist underlayer film contains a solvent, a heterocyclic compound having a dicyanostyryl group, a cyclic compound including an amide group, for example, and the reaction product of a heterocyclic compound precursor having an epoxy group and an active proton compound, for example.

Description

technical field [0001] The present invention relates to a composition for forming a resist underlayer film, a resist underlayer film obtained from the composition for forming a resist underlayer film, and a patterned product using the composition for forming a resist underlayer film. A method for manufacturing a substrate, a method for manufacturing a semiconductor device, a heterocyclic compound having a dicyanostyrene group, and a method for manufacturing the same. Background technique [0002] In semiconductor manufacturing, a photolithography process for forming a resist pattern of a desired shape by providing a resist underlayer film between a substrate and a resist film formed thereon is well known. After forming the resist pattern, removal of the resist underlayer film and processing of the substrate are performed, and dry etching is mainly used as this step. Furthermore, dry etching is also used in the process of removing unnecessary resist patterns and underlying r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11C07D251/34G03F7/42H01L21/027
CPCG03F7/11C07D251/34G03F7/422H01L21/027G03F7/42H01L21/0274
Inventor 远藤贵文远藤勇树
Owner NISSAN CHEM CORP
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