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Silicon or sulfur-containing film-forming resin and photoresist composition

A technology of film-forming resin and photoresist, which is applied in the field of film-forming resin and photoresist composition, can solve the problems of high brittleness of film-forming resin, poor resolution of photoresist, and poor adhesion of substrate materials, etc., and achieve good The effect of toughness, high resolution and good adhesion

Active Publication Date: 2022-02-01
江苏集萃光敏电子材料研究所有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the technical problems of high brittleness of film-forming resin commonly used in 248nm photoresist in the prior art and poor adhesion to substrate materials and the technical problem of poor resolution of the photoresist obtained by using the film-forming resin, a method is provided. Film-forming resin and photoresist composition containing silicon or sulfur

Method used

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  • Silicon or sulfur-containing film-forming resin and photoresist composition
  • Silicon or sulfur-containing film-forming resin and photoresist composition
  • Silicon or sulfur-containing film-forming resin and photoresist composition

Examples

Experimental program
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Effect test

Embodiment 1

[0038] This embodiment is a sulfur-containing film-forming resin, and the comonomers of the film-forming resin in this embodiment are compound (I) and compound (II), and the polymerization reaction equation is as follows:

[0039]

[0040] The polymerization reaction process was as follows: 8.76g of compound (I), 11.24g of compound (II), 0.40g of free radical initiator azodiisocyanate (AIBN) and 200mL of solvent methyl isobutyl ketone were added into a 500mL three-necked flask. Under nitrogen protection, the reaction temperature was controlled at 75-80° C., and the reaction was stirred for 10 h. After the reaction was completed and the reaction liquid was cooled to 25°C, the product was extracted with methanol, and repeated three times, and the product was dried in an oven for 20 hours to obtain compound (I)-compound (II) binary copolymer film-forming resin, which was designated as film-forming resin 1 .

[0041] GPC (gel permeation chromatography) was used to test the pro...

Embodiment 2

[0044] This embodiment is a sulfur-containing film-forming resin. The raw materials, polymerization reaction equation and polymerization reaction process used are the same as in Example 1, except that the amount of raw materials is 4.84g compound (I), 15.16g compound (II), 0.35g g AIBN, the film-forming resin obtained by polymerization is recorded as film-forming resin 2.

[0045] GPC (gel permeation chromatography) was used to test the product, and the weight average molecular weight of the obtained film-forming resin 2 was 7400 g / mol, and the molecular weight distribution was 2.48.

Embodiment 3

[0047] This embodiment is a sulfur-containing film-forming resin. The raw materials, polymerization reaction equation and polymerization reaction process used are the same as in Example 1, except that the amount of raw materials is 6.37g of compound (I), 13.63g of compound (II), 0.45 gAIBN, the film-forming resin obtained by polymerization is recorded as film-forming resin 3.

[0048] The product was tested by GPC (Gel Permeation Chromatography), and the weight average molecular weight of the obtained film-forming resin 3 was 4300 g / mol, and the molecular weight distribution was 2.11.

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Abstract

The invention relates to silicon or sulfur-containing film-forming resin and a photoresist composition. Comonomers of the film-forming resin comprise an acrylate derivative and a butenoic acid ester derivative; the butenoic acid ester derivative is a silicon-containing butenoic acid ester derivative or a sulfur-containing butenoic acid ester derivative; the silicon-containing crotonate derivative has a structure as shown in a formula (1), and the sulfur-containing crotonate derivative has a structure as shown in a formula (2), wherein R11 is a cyclic group with 3-10 ring-forming atoms and at least contains one sulfur atom as the ring-forming atom. The film-forming resin has relatively good toughness and relatively good adhesive force to the substrate, and the photoresist obtained by adopting the film-forming resin has relatively high resolution.

Description

technical field [0001] The invention relates to the technical field of polymer materials, in particular to a silicon or sulfur-containing film-forming resin and a photoresist composition. Background technique [0002] Photolithography refers to forming a resist film made of photoresist on the top of the substrate, irradiating a photomask with a preset pattern with ultraviolet light, electron beam or X-ray, etc., and developing a photolithographic pattern. After exposure and development, the photoresist whose solubility increases belongs to positive photoresist, otherwise it belongs to negative photoresist. [0003] With the continuous development of lithography technology, the circuit pattern produced by it has changed from simple to complex, the lines have been rough to fine, and the exposure light source has gradually shortened: represented by ultraviolet radiation represented by i-line (365nm) and g-line (436nm), To KrF excimer laser (248nm), then to ArF excimer laser (1...

Claims

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Application Information

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IPC IPC(8): C08F220/18C08F220/38C08F230/08G03F7/004G03F7/075
CPCC08F220/1811G03F7/004G03F7/0758C08F220/38C08F230/085
Inventor 聂俊朱晓群李三保张宇蔚孙芳
Owner 江苏集萃光敏电子材料研究所有限公司
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