Optical element comprising anti-reflection protective film and preparation method of optical element
A technology of optical components and diamond-like film, applied in the field of optical components, can solve the problems of high resistance to mechanical damage, high transmittance, etc., and achieve the effect of low cost and simple process
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Embodiment 1
[0050] Embodiment 1: prepare as figure 1 optics shown
[0051] Step 1: Perform polishing pretreatment on the ZnSe substrate 100. The specific operation is: 1. Polish the ZnSe substrate of Φ125×3, requiring surface finish level II, ΔN=0.3; 2. After polishing, coat the ZnSe substrate with Apply protective paint. Wash off the protective paint before coating. The specific steps include: soaking in analytical grade alcohol for 2 hours, and then scrubbing with a mixture of alcohol and ether.
[0052] Step 2: Put in the substrate. The specific operations are: turn on the circulating water, air compressor and main power supply; turn on the diffusion pump to preheat, open the air valve to inflate the vacuum chamber; open the door of the vacuum chamber, clean the vacuum chamber, and focus on cleaning the ion source and Electron gun; add film material, replace the crystal oscillator; put the ZnSe substrate into the jig, and then put it on the planetary disc of the coating machine; chec...
Embodiment 2
[0059] Embodiment 2: preparation such as figure 2 optics shown
[0060] The lower surface of the ZnSe substrate in the optical element made in Example 1 is according to G / L 1 / H / L 2 In the order of / M / A, the anti-reflection coating is plated by ion-assisted electron evaporation method, where G represents the ZnSe substrate, L 1 represents the first ytterbium fluoride layer, H represents the zinc selenide layer, L 2 Represents the second ytterbium fluoride layer, M represents the zinc sulfide layer, A represents air, and the physical thicknesses of the layers from the substrate to the air are: 200nm (first ytterbium fluoride layer), 500nm (zinc selenide layer), 1030nm (second ytterbium fluoride layer), 200nm (zinc sulfide layer). In the process of preparing zinc selenide layer, the deposition rate of ZnSe film material is 0.4nm / s; in the process of preparing zinc sulfide layer, the deposition rate of ZnS film material is 0.4nm / s; layer and a second YbF layer, YbF 3 The d...
Embodiment 3
[0062] The optical element prepared in Example 2 is tested for transmittance in the 8-12 micron wave band, and the results show that the average transmittance in the 8-12 micron wave band is greater than 90%, and the transmittance curve is shown in image 3 shown.
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