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A kind of high-resistance gan-based hemt device and preparation method thereof

A high-resistance, device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as increasing the dislocation density of GaN-based epitaxial structures, affecting the leakage characteristics and withstand voltage of GaN-based HEMT devices, etc. , to achieve simple and controllable process scheme, improve crystal quality and reduce dislocation density

Active Publication Date: 2022-04-22
JIHUA LAB
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of this application is to provide a high-resistance GaN-based HEMT device and its preparation method, aiming at solving the problem of increasing the dislocation density of the GaN-based epitaxial structure by MOCVD epitaxy in the prior art, Issues Affecting Leakage Characteristics and Withstand Voltage Capability of GaN-based HEMT Devices

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  • A kind of high-resistance gan-based hemt device and preparation method thereof
  • A kind of high-resistance gan-based hemt device and preparation method thereof
  • A kind of high-resistance gan-based hemt device and preparation method thereof

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preparation example Construction

[0061] Specifically, the preparation method of the high resistance GaN-based HEMT device of the present application, comprising the following steps:

[0062] (1) Substrate no-wash and high temperature impurity removal.

[0063]In the present application, a silicon substrate is selected as a substrate for gaN epitaxial structure growth.

[0064] In this application, the substrate does not need to be cleaned before use. Because the HF (HydrofluoricAcid) solution or other acid-base solution used for cleaning will have inconsistent corrosion rates at different locations on the surface of the silicon substrate and the process is uncontrollable. In addition, the impurities contained in the cleaning solution and human causes are very easy to introduce pollution sources, resulting in secondary contamination of the silicon substrate, which will adversely affect the controllable growth of the subsequent high-quality AlN template, so the cleaning steps of the traditional method are abandone...

Embodiment 1

[0131] (1) Substrate no-wash and high-temperature desplusion: At 1065 °C, the reaction chamber pressure is maintained at 70torr, and the silicon substrate is treated at high temperature for about 2 minutes under hydrogen atmosphere.

[0132] (2) Substrate nitriding treatment: at 1065 °C, the reaction chamber pressure is maintained at 70torr, and NH is introduced 3 The flow rate is 0.4 slm, and the processing time is 30 S.

[0133] (3) Pre-paved Al: At 1075 °C, the reaction chamber pressure is maintained at 70torr, TMAl with a flow rate of 50sccm is introduced under a hydrogen atmosphere, and a layer of Al is deposited on the nitrided Si substrate, and the deposition time is 80S.

[0134] (4) Growth AlN buffer layer:

[0135] At 1075 °C, the reaction chamber pressure is maintained at 70torr, and the inlet flow rate is NH of 3slm 3 The first AlN buffer layer with a TMAl growth thickness of about 20 nm with a flow rate of 140sccm forms a three-dimensional AlN island;

[0136] Reduce ...

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Abstract

This application relates to the field of semiconductor devices, and discloses a high-resistance GaN-based HEMT device and a preparation method thereof. The preparation method includes the following steps: nitriding treatment; pre-spreading Al; growing an AlN buffer layer: growing the first AlN buffer layer, The second AlN buffer layer and the third AlN buffer layer; growing the AlGaN buffer layer: growing the first Al in sequence y Ga 1‑y N buffer layer and second Al y Ga 1‑y N buffer layer; growing self-doped carbon high resistance GaN epitaxial layer; growing GaN channel layer; growing Al y Ga 1‑y N barrier layer; GaN cap layer growth. In this application, by optimizing the process, the dislocation density of the AlN buffer layer and the self-doped carbon high-resistance GaN epitaxial layer can be greatly reduced, and the crystal quality can be improved.

Description

Technical field [0001] The present application relates to the field of semiconductor devices, mainly to a high resistance GaN-based HEMT device and a preparation method thereof. Background [0002] With the increasing demand for high-voltage converter devices in the market, silicon devices can no longer meet the requirements due to their own material limitations. GaN (Gallium Nitride, Gallium Nitride) based HEMT (High Electron Mobility Transistor, high electron mobility transistor) devices have a high electron saturation rate and breakdown voltage, which can meet the needs of RF power devices for speed and high withstand voltage, and have been greatly valued by many international semiconductor device manufacturers and have become a new research hotspot. [0003] In the preparation process of GaN-based HEMT devices, one of the key core technologies is the growth of high-quality, high-resistance GaN-based epitaxial structures. Among the many substrates (sapphire, silicon, silicon ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/335H01L29/06H01L29/778
CPCH01L29/66462H01L29/7787H01L29/0684
Inventor 郭嘉杰吴帆王慧勇张南刘自然孔倩茵
Owner JIHUA LAB