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Copper interconnection polishing solution with pressure buffering effect and preparation method of grinding material of copper interconnection polishing solution

A technology of buffering effect and polishing fluid, applied in chemical instruments and methods, polishing compositions containing abrasives, other chemical processes, etc., can solve problems such as adverse effects on the ecological environment and difficulties in post-cleaning, and achieve improved mechanical grinding rate, Effect of reducing mechanical damage and increasing specific surface area

Active Publication Date: 2022-03-01
博力思(天津)电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these inhibitors all play a chemical role: they are easy to adsorb on the metal surface, form a protective film, prevent or slow down the reaction, which increases the difficulty of post-polishing cleaning; in addition, many corrosion inhibitors contain benzene For example, the most commonly used inhibitors are benzotriazole (BTA) and other triazole group chemicals, long-term large-scale use is likely to cause adverse effects on the ecological environment

Method used

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  • Copper interconnection polishing solution with pressure buffering effect and preparation method of grinding material of copper interconnection polishing solution
  • Copper interconnection polishing solution with pressure buffering effect and preparation method of grinding material of copper interconnection polishing solution
  • Copper interconnection polishing solution with pressure buffering effect and preparation method of grinding material of copper interconnection polishing solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] The composition and weight percent of this example polishing liquid are as follows: Porous SiO 2 Hollow microspheres (60-120nm in particle size), 12%; H 2 o 2 (30% solution), 6%; EDTA, 3%; Betaine, 3%.

[0036] The porous SiO 2 The preparation method of the hollow microsphere abrasive is: 100mL of distilled water, 2.2g of cetyltrimethylammonium bromide (CTAB), stirring at 45°C for 30 minutes; then adding 2.8mL of ammonia water and 3mL of orthosilicate Tetraethyl ester, 0.85mL ethyl acetate, and the resulting mixed system was rapidly and continuously stirred at 40°C for 12 hours; the product was centrifuged, then ultrasonically dispersed in hot water and washed repeatedly to remove the added CTAB to obtain nano-porous SiO 2 hollow microspheres. Porous SiO 2 Transmission electron microscope images of hollow microspheres as figure 1 As shown, the particle size is about 120nm.

[0037] figure 2 Porous SiO 2 N of hollow microspheres 2 Adsorption / desorption isoth...

Embodiment 2

[0040] The composition and weight percent of this example polishing liquid are as follows: Porous SiO 2 Hollow microspheres (particle size 60-120nm), SiO 2 Sol (30-60nm particle size), mixed 2:1, 12%; H 2 o 2 (30% solution), 6%; EDTA, 3%; Betaine 3%.

[0041] Corresponding experimental data: Polishing conditions: rotating speed of upper and lower polishing head: 97 / 103rpm; flow rate of polishing liquid: 300mL / min; polishing pressure: 2.5psi; removal rate: 7739A / min, surface roughness Sq: 3.3nm.

Embodiment 3

[0043] The composition and weight percent of this example polishing liquid are as follows: SiO 2 Sol (particle size 60-120nm), SiO 2 Sol (30-60nm particle size), mixed 2:1, 12%; H 2 o 2 (30% solution), 6%; EDTA, 3%; Betaine 3%.

[0044] Corresponding experimental data: Polishing conditions: rotating speed of upper and lower polishing head: 97 / 103rpm; flow rate of polishing liquid: 300mL / min; polishing pressure: 2.5psi; removal rate: 9334A / min, surface roughness Sq: 23.1nm.

[0045] Comparing Examples 1-3, it can be seen that under the same conditions, porous SiO 2 In the presence of hollow microspheres, the surface roughness can be significantly reduced, SiO 2 The introduction of sol can increase the removal rate, and in porous SiO 2 Hollow microspheres and SiO 2 Under the premise of ensuring the removal rate, the polished sample with lower roughness can be obtained under the appropriate proportion of sol.

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Abstract

The invention relates to a copper interconnection polishing solution with a pressure buffering effect and a preparation method of a grinding material of the copper interconnection polishing solution, the polishing solution comprises the grinding material, at least one oxidizing agent, at least one surfactant and at least one complexing agent, the grinding material comprises porous SiO2 hollow microspheres, and the particle size of the porous SiO2 hollow microspheres is 80-180nm. Porous SiO2 hollow microspheres are introduced into the polishing solution, deformation can be generated due to the fact that hollow silicon dioxide is stressed, and therefore pressure on convex and concave positions is different, dish shapes are eliminated, and planarization of the copper surface is achieved.

Description

technical field [0001] The invention relates to a copper interconnection polishing liquid with pressure buffering effect and a preparation method of its abrasive material. Background technique [0002] The main line of development of integrated circuit technology has been reflected in the continuous reduction of design line width. Because Cu has a higher activation energy for grain boundary diffusion, electron migration is less likely to occur, and copper wiring is more widely used in the manufacture of chips. The dual damascene process is currently the only copper patterning process that is mature and has been successfully applied to IC manufacturing; therefore, Cu interconnection CMP has become one of the main contents of CMP technology research in the industry. [0003] Since the CMP of Cu in the dual damascene process needs to remove Cu, the barrier layer material and the dielectric layer, the physical and chemical properties of the three are very different, and the sim...

Claims

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Application Information

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IPC IPC(8): C09G1/02C09K3/14C01B33/16H01L21/321
CPCC09G1/02H01L21/3212C09K3/1409C01B33/163C01P2004/34C01P2004/62C01P2004/64C01P2004/02
Inventor 宋英英王晗笑姜鉴哲付聚三刘圆张琳
Owner 博力思(天津)电子科技有限公司
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