Mirror bit SONOS flash memory unit
A flash memory cell and mirror technology, applied in electrical components, electrical solid-state devices, circuits, etc., can solve problems such as difficulties, and achieve the effects of reducing process costs, saving lithography processes, and improving chip integration.
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[0040] like figure 1 shown is a schematic structural diagram of a mirror-bit SONOS flash memory cell according to an embodiment of the present invention; the mirror-bit SONOS flash memory cell according to the embodiment of the present invention includes a selection transistor and a storage transistor, and the selection transistor is an enhancement-mode MOS transistor and has a first threshold voltage, The storage transistor is a depletion-mode SONOS storage transistor and has a second threshold voltage in a state where no charge is stored.
[0041] The selection transistor and the storage transistor share a heavily doped source region and a drain region of the first conductivity type formed on the semiconductor substrate 101, and a surface of the semiconductor substrate 101 between the source region and the drain region is formed with a first conductivity type. A lightly doped channel doping layer 103 of conductivity type. In the embodiment of the present invention, the sour...
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