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Graphene transistor lead ion sensor and preparation method thereof

An ion sensor and transistor technology, applied in the field of biosensors, can solve the problems of limited application, time-consuming, complicated and expensive, etc., and achieve the effect of high sensitivity

Pending Publication Date: 2022-03-15
HUBEI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although these methods have high accuracy and precision, they require specific laboratories, complex and expensive equipment, time-consuming pre-processing and operation by professional technicians, which greatly limits their applications, especially for on-site detection, instant Detection and rapid detection

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  • Graphene transistor lead ion sensor and preparation method thereof
  • Graphene transistor lead ion sensor and preparation method thereof
  • Graphene transistor lead ion sensor and preparation method thereof

Examples

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preparation example Construction

[0035] The present invention also provides the preparation method of the graphene transistor ion sensor described in the above technical scheme, comprising the following steps:

[0036] (1) Prepare gate, source and drain on the surface of the substrate, so that there is a channel between the source and drain;

[0037] (2) Graphene is tiled on the channel between the source and the drain to obtain a graphene transistor;

[0038] (3) carbon dots are fixed on the grid surface of the graphene transistor obtained in the step (2), to obtain the graphene transistor ion sensor.

[0039] In the present invention, gate, source and drain are prepared on the substrate surface, so that a channel exists between the source and drain. In the present invention, the preparation of the gate electrode, the source electrode and the drain electrode preferably includes: sequentially vapor-depositing a chromium layer and a gold layer on the surface of the substrate by thermal evaporation coating.

...

Embodiment 1

[0052] Thermal evaporation coating:

[0053] Cut the electronic-grade glass into 12×12mm size, ultrasonically clean it with acetone, isopropanol, ethanol, and water for 20 minutes, dry it in an oven, and paste the glass piece on a mask plate of a specific shape with high-temperature glue. Weigh an appropriate amount of chromium and gold and put them into a tungsten boat to prepare vacuum thermal evaporation coating.

[0054] When evaporating, first evaporate chromium: the thickness is 8nm.

[0055] Evaporation gold layer again: the thickness is 80nm.

[0056] The obtained electrode shape, structure and size are as follows image 3 shown. image 3 Among them, G is the gate, that is, the gate, S is the source, that is, the source, D is the drain, that is, the drain, and the 0.25mm wide channel between the source and the drain is the graphene channel after graphene is transferred.

[0057] Wet transfer of monolayer graphene:

[0058] 250 mg of methyl methacrylate (PMMA) with...

Embodiment 2

[0065] Thermal evaporation coating:

[0066] Cut the electronic-grade glass into 12×12mm size, ultrasonically clean it with acetone, isopropanol, ethanol, and water for 20 minutes, dry it in an oven, and paste the glass piece on a mask plate of a specific shape with high-temperature glue. Weigh an appropriate amount of chromium and gold and put them into a tungsten boat to prepare vacuum thermal evaporation coating.

[0067] When evaporating, chrome is evaporated first: the thickness is 6nm.

[0068] Evaporation gold layer again: the thickness is 50nm.

[0069] The shape, structure and size of the obtained electrode are the same as in Example 1.

[0070] Wet transfer of monolayer graphene:

[0071] 250 mg of methyl methacrylate (PMMA) with a molecular weight of 99600 g / mol was dissolved in 5 mL of anisole, and stirred on a magnetic stirrer to obtain a clear and transparent PMMA / anisole solution with a concentration of 50 mg / mL.

[0072] Cut the single-layer copper-based gr...

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Abstract

The invention provides a graphene transistor lead ion sensor. The graphene transistor lead ion sensor comprises a substrate, a grid electrode, a source electrode and a drain electrode, a graphene channel is arranged between the source electrode and the drain electrode; glutathione molecules are modified on the surface of the grid electrode. The probe glutathione is fixed on the surface of a grid electrode of the graphene transistor, and the glutathione can be complexed with lead ions in a solution, so that the double-electrode-layer interface characteristic between the transistor and the sample solution is changed, current in a graphene channel is converted, and trace lead ions in the solution can be detected by detecting the change of the current in the channel; according to the graphene transistor ion sensor provided by the invention, the drain electrode voltage is fixed, the grid electrode voltage is changed, the lowest detection limit of lead ions can reach 10 <-18 > M, the current of the sensor is instantly changed due to different lead ion concentrations, and the graphene transistor ion sensor has very high sensitivity.

Description

technical field [0001] The invention relates to the technical field of biosensors, in particular to a graphene transistor ion sensor and its preparation method and application. Background technique [0002] With the development of nanotechnology, many chemical and biological sensors or electronic devices based on nanomaterials with excellent performance have been extensively studied. Graphene is considered to be a promising method in chemical and biological sensors due to its unique physical properties. s material. [0003] Ion sensors are sensors that use ion-selective electrodes to convert the amount of ions sensed into usable output signals. Ion sensors have many important applications, such as environmental monitoring, food safety inspection, etc. The interaction between ions and graphene is important for all types of chemical or biological sensors based on graphene transistors as they operate in aqueous solutions. Various ion sensors based on graphene transistors have...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/414
CPCG01N27/4146
Inventor 李金华肖碧晨王贤保
Owner HUBEI UNIV
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