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Solar cell and preparation method thereof

A solar cell and electrode technology, applied in the field of solar cells, can solve the problems of extra, complicated operation, difficult production cost, etc., and achieve the effect of improving the pulling force and the bonding force

Pending Publication Date: 2022-03-15
LONGI SOLAR TECH (TAIZHOU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The seed layer formation process is performed independently in separate devices, such as by sputtering or light-induced plating, but the sputtering of the seed layer requires additional sputtering equipment in the existing production line, and the sputtering of the desired pattern Mask steps are also used, the operation is complicated, it is difficult to reduce production costs, and the sputtering seed layer is usually not conductive enough to carry the large current density generated by silicon-based solar cells, and needs to be coated with other metals such as nickel and copper to enhance Conductivity

Method used

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  • Solar cell and preparation method thereof
  • Solar cell and preparation method thereof
  • Solar cell and preparation method thereof

Examples

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preparation example Construction

[0132] In this application, the first method for preparing a solar cell includes the following steps:

[0133] Step 1: providing a silicon substrate 1 .

[0134] Step 2: Form a doped layer 8 on one side surface (front side or front surface) of the silicon substrate.

[0135] Step 3: setting a tunneling layer 2 on one side surface (back surface or rear surface) of the silicon substrate 1 .

[0136] Step 4: depositing a first doped polysilicon layer 3 on the side of the tunneling layer 2 away from the silicon substrate 1 .

[0137] Step 5: depositing a first dielectric layer 4 on the side of the first doped polysilicon layer 3 away from the tunneling layer 2 .

[0138] Step 6: Printing a first printed electrode paste on the side of the first dielectric layer 4 away from the first doped polysilicon layer 3 to form a first printed sintered layer, and the first printed electrode paste burns through the The first dielectric layer 4 is connected to the first doped polysilicon laye...

Embodiment 1

[0313] The solar cell in this embodiment is the first solar cell, comprising the following steps:

[0314] Step 1: providing a silicon substrate.

[0315] It is obtained by cleaning the silicon wafer, alkali texturing and edge etching. After texturing, a pyramid texture is formed on the front surface (front surface) of the silicon wafer to obtain a p-type crystalline silicon layer.

[0316] Step 2: Form a doped layer

[0317] Boron diffusion on the front side of the silicon substrate forms a doped layer;

[0318] The boron diffusion may be: using a boron source to diffuse the silicon substrate under high temperature conditions, and form a doped layer on the front side through the boron diffusion.

[0319] The boron source for the boron diffusion may include boron tribromide, the diffusion temperature of the boron diffusion ranges from 950-1000°C, and the diffusion time ranges from 1.5-2.5 hours.

[0320] Step 3: forming a tunneling layer.

[0321] In step 2, boron diffusion ...

Embodiment 2

[0354] The solar cell in this embodiment is the second type of solar cell, comprising the following steps:

[0355] Step 1: Provide a silicon substrate (refer to Example 1 for the specific process)

[0356] Step 2: Form the second dielectric layer

[0357] Oxidizing the front side of the silicon substrate to form a silicon oxide layer on the front side of the silicon substrate, that is, the silicon oxide layer is the second dielectric layer.

[0358] Step 3: Forming a tunneling layer (for the specific process, please refer to Example 1)

[0359] Step 4: Forming the first doped polysilicon layer (refer to Example 1 for the specific process)

[0360] Step 5: Form the first dielectric layer

[0361] On the surface of the first doped polysilicon layer, a laser is used to ablate the first doped polysilicon layer and the tunneling layer at intervals to expose the silicon base, thereby forming a plurality of interval first regions.

[0362] Deposit a first dielectric layer on the...

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Abstract

The invention discloses a solar cell, which comprises a silicon substrate, a tunneling layer, a first doped polycrystalline silicon layer, a first dielectric layer and a first electrode, a tunneling layer, a first doped polycrystalline silicon layer and a first dielectric layer are sequentially stacked on the surface of one side of the silicon substrate; the first electrode comprises a first main gate electrode and a first fine gate electrode, and the first fine gate electrode and the first main gate electrode intersect and are electrically connected; the first main gate electrode burns through the first dielectric layer and extends into the first doped polycrystalline silicon layer; crystalline first metal nanoparticles are arranged at the junction of the first doped polycrystalline silicon layer and the first main gate electrode; a plurality of first openings penetrating through the first dielectric layer are formed in the first dielectric layer; the first fine gate electrode is electroplated on the first doped polycrystalline silicon layer exposed out of the first opening. The invention also provides a preparation method of the solar cell. According to the solar cell, the usage amount of the first main gate electrode slurry is reduced, and the bonding strength of the first main gate electrode and the first fine gate electrode is enhanced.

Description

technical field [0001] The present application relates to the technical field of solar cells, in particular to a solar cell and a preparation method thereof. Background technique [0002] Crystalline silicon solar cells are currently the solar cells with the highest market share due to their high energy conversion efficiency. How to improve the conversion efficiency of crystalline silicon solar cells and components while reducing their production costs is the biggest problem facing the industry. At present, in large-scale silicon solar cell manufacturing, screen printing is usually used to realize the metallization process of silicon solar cells, but the accuracy of screen printing is limited, the shape of the printed electrode is fluctuating, and the electrodes are widened after printing and sintering. As a result, the formed grid has a low aspect ratio, thereby reducing the effective light-receiving area of ​​the light-receiving surface of the silicon solar cell, and in a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/068H01L31/0224H01L31/0236H01L31/0288H01L31/18
CPCH01L31/068H01L31/182H01L31/022433H01L31/02363H01L31/0288Y02E10/546Y02P70/50
Inventor 李华童洪波张洪超刘继宇
Owner LONGI SOLAR TECH (TAIZHOU) CO LTD
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