Composite quantum dot, preparation method thereof and quantum dot light-emitting diode

A quantum dot luminescence and quantum dot technology, which is applied in the direction of luminescent materials, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve the problems of photoelectric performance inactivation, short service life, quenching, etc., and achieve good water resistance, The effect of improving photoelectric stability performance

Pending Publication Date: 2022-04-05
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] An object of the present invention is to overcome the above-mentioned deficiencies in the prior art, and provide composite quantum dots and its preparation method to solve the technical problems that the existing quantum dots are easily affected by factors such as water and oxygen, resulting in inactivation or quenching of photoelectric properties.
[0005] Another object of the present invention is to provide quantum dot light-emitting diodes to solve the problem of poor luminous stability and short service life of quantum dot light-emitting diodes due to the quantum dots contained in the existing quantum dot light-emitting diodes being invaded by water and oxygen in the air technical issues

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  • Composite quantum dot, preparation method thereof and quantum dot light-emitting diode
  • Composite quantum dot, preparation method thereof and quantum dot light-emitting diode
  • Composite quantum dot, preparation method thereof and quantum dot light-emitting diode

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preparation example Construction

[0040] Correspondingly, the embodiment of the present invention provides the preparation method of the above composite quantum dots. The technological process of the preparation method of composite quantum dots is as figure 1 As shown, it includes the following steps:

[0041] S01: dissolving the quantum dots and preparing a quantum dot dispersion;

[0042] S02: adding the sulfur halide compound into the quantum dot dispersion liquid and performing mixing treatment.

[0043] Wherein, in the step S01, the prepared quantum dot dispersion liquid should be such that the quantum dots are fully and uniformly dispersed to form a dispersion system in which the quantum dots are uniformly dispersed. Therefore, in an embodiment, the solution for dissolving quantum dots may be a common solvent for preparing quantum dots or a solvent for preparing quantum dot inks. In a specific embodiment, the solvent is selected from at least one of n-octane, n-dodecane, decane and n-hexane.

[0044]...

Embodiment 11

[0071] This embodiment provides a composite quantum dot and its preparation method. The composite quantum dots include green core-shell type CdSe / ZnSe quantum dots, which are combined and coated with disulfide dichloride (S 2 Cl 2 ).

[0072] Composite quantum dot preparation steps include:

[0073] S11: Dissolve the green core-shell type CdSe / ZnSe quantum dots in n-octane solvent to prepare a CdSe / ZnSe quantum dot dispersion; wherein, control the concentration of CdSe / ZnSe quantum dots in the CdSe / ZnSe quantum dot dispersion to 20 mg / mL;

[0074] S12: Bubble the CdSe / ZnSe quantum dot dispersion prepared in step S11 with argon in an argon atmosphere, and stir at 20-30 degrees Celsius at a speed of 3000 rpm for 30 minutes until the quantum dots are completely dissolved;

[0075] S13: Add disulfur dichloride S to the CdSe / ZnSe quantum dot dispersion after the bubbling treatment in step S11 at a ratio of 2.0 mg / mL 2 Cl 2, continue to stir for 30 minutes, and dry it.

Embodiment 12

[0077] This embodiment provides a composite quantum dot and its preparation method. The composite quantum dots include green core-shell type CdSe / ZnSe quantum dots, which are combined and coated with disulfide dibromide (S 2 Br 2 ).

[0078] Composite quantum dot preparation steps include:

[0079] S11: Dissolve the green core-shell type CdSe / ZnSe quantum dots in n-octane solvent to prepare a CdSe / ZnSe quantum dot dispersion; wherein, the concentration of CdSe / ZnSe quantum dots in the CdSe / ZnSe quantum dot dispersion is controlled to 20mg / mL;

[0080] S12: Bubble the CdSe / ZnSe quantum dot dispersion prepared in step S11 with argon in an argon atmosphere, and stir at 20-30 degrees Celsius at a speed of 3000 rpm for 30 minutes until the quantum dots are completely dissolved;

[0081] S13: Add S to the CdSe / ZnSe quantum dot dispersion after the bubbling treatment in step S11 at a ratio of 2.0 mg / mL 2 Br 2 , continue to stir for 30 minutes, and dry it.

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Abstract

The invention discloses a composite quantum dot and a preparation method thereof, a quantum dot light-emitting film and a quantum dot light-emitting diode. The composite quantum dot comprises a quantum dot, the surface of the quantum dot is combined with a coating layer, and the material of the coating layer comprises a halogenated sulfur compound. The quantum dot light-emitting film and the quantum dot light-emitting diode contain the composite quantum dot. According to the composite quantum dot disclosed by the invention, water and oxygen can be consumed by fully utilizing the reaction between the halogenated sulfur compound and water and oxygen so as to realize a protection effect on the quantum dot and prevent the oxygen and the water from being contacted with the quantum dot, so that the quantum dot is protected from adverse effects caused by the oxygen and the water; meanwhile, sulfur generated by reaction between the halogenated sulfur compound and water as well as oxygen can be attached to the surfaces of the quantum dots so as to inhibit the quantum dots from being oxidized. The quantum dot light-emitting film and the quantum dot light-emitting diode have good light-emitting stability, light-emitting efficiency and service life, and the photoelectric property of the quantum dot light-emitting film and the quantum dot light-emitting diode is improved.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology, and in particular relates to composite quantum dots, a preparation method thereof and quantum dot light-emitting diodes. Background technique [0002] Quantum dots are semiconductor nanoparticles. Due to the quantum size effect, excitons are restricted in three dimensions, so quantum dots are also called "zero-dimensional materials". This feature makes quantum dots different from bulk materials and general materials. Molecules have become the focus of researchers in various fields. Quantum dots have continuous wide excitation spectrum and narrow symmetrical emission spectrum, so quantum dots of different sizes and colors can be excited by a single wavelength light source, and have narrow emission spectrum, wide color gamut, good stability, and low production cost. Advantages, which cannot be achieved by traditional fluorescent dyes. At the same time, compared with traditional fluorescen...

Claims

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Application Information

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IPC IPC(8): C09K11/88C09K11/02H01L51/50H01L51/56
Inventor 吴劲衡吴龙佳何斯纳
Owner TCL CORPORATION
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