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Perovskite thin film manufacturing method, solar cell and laminated cell

A production method and technology of perovskite, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as difficulty in organic components, short circuit of batteries, reaction of inorganic components, etc.

Pending Publication Date: 2022-04-12
LONGI SOLAR TECH (XIAN) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for making a perovskite film, a solar cell and a stacked battery, which solves the problem that the perovskite solution will be deposited on the bottom of the suede structure when the perovskite layer is prepared by the solution method in the prior art, causing the battery The problem of short circuit, and the problem that the organic component is difficult to react with the dense inorganic component in the vacuum evaporation method

Method used

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  • Perovskite thin film manufacturing method, solar cell and laminated cell
  • Perovskite thin film manufacturing method, solar cell and laminated cell
  • Perovskite thin film manufacturing method, solar cell and laminated cell

Examples

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Embodiment 1

[0085] The application of the manufacturing method of the perovskite thin film provided in the embodiment of the present invention in the laminated battery is as follows:

[0086] The first step is to provide a commercial-grade M2 ​​n-type silicon wafer with a thickness of 180um and a resistivity of 5Ω·cm, which is polished with an alkaline solution, textured, and cleaned to form an n-type silicon wafer substrate with a pyramid textured surface.

[0087] In the second step, in a plasma-enhanced chemical vapor deposition (PECVD) device, a 10nm intrinsic amorphous silicon passivation layer is sequentially deposited on the front and back of the n-type silicon wafer substrate to passivate the dangling bonds on the surface of the crystalline silicon.

[0088] In the third step, the n-type amorphous silicon emission level is deposited with a thickness of 10nm by using the mixed gas of phosphine and silane diluted with hydrogen, and the p-type amorphous silicon back layer with a thick...

Embodiment 2

[0099] The application of the manufacturing method of the perovskite thin film provided in the embodiment of the present invention in the laminated battery is as follows:

[0100] The first step is to provide a commercial-grade M2 ​​n-type silicon wafer with a thickness of 180um and a resistivity of 5Ω·cm, which is polished with an alkaline solution, textured, and cleaned to form an n-type silicon wafer substrate with a pyramid textured surface.

[0101] In the second step, in a plasma-enhanced chemical vapor deposition (PECVD) device, a 10nm intrinsic amorphous silicon passivation layer is sequentially deposited on the front and back of the n-type silicon wafer substrate to passivate the dangling bonds on the surface of the crystalline silicon.

[0102] In the third step, the n-type amorphous silicon emission level is deposited with a thickness of 10nm by using the mixed gas of phosphine and silane diluted with hydrogen, and the p-type amorphous silicon back layer with a thick...

Embodiment 3

[0112] The application of the manufacturing method of the perovskite thin film provided in the embodiment of the present invention in the laminated battery is as follows:

[0113] The first step is to provide a commercial-grade M2 ​​n-type silicon wafer with a thickness of 180um and a resistivity of 5Ω·cm, which is polished with an alkaline solution, textured, and cleaned to form an n-type silicon wafer substrate with a pyramid textured surface.

[0114] In the second step, in a plasma-enhanced chemical vapor deposition (PECVD) device, a 10nm intrinsic amorphous silicon passivation layer is sequentially deposited on the front and back of the n-type silicon wafer substrate to passivate the dangling bonds on the surface of the crystalline silicon.

[0115] In the third step, the n-type amorphous silicon emission level is deposited with a thickness of 10nm by using the mixed gas of phosphine and silane diluted with hydrogen, and the p-type amorphous silicon back layer with a thick...

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Abstract

The invention discloses a manufacturing method of a perovskite thin film, a solar cell and a laminated cell, relates to the technical field of photovoltaics, and aims to solve the problem that in the prior art, when a perovskite layer is prepared by a solution method, a perovskite solution is deposited at the valley bottom of a suede structure, so that the cell is short-circuited. And organic components are difficult to react with compact inorganic components in a vacuum evaporation method. The manufacturing method of the perovskite thin film comprises the following steps: providing a substrate, wherein the surface of the substrate is provided with a suede structure; forming a metal halide skeleton layer on the substrate with the suede structure, wherein the metal halide skeleton layer conformally covers the suede structure; and forming a perovskite light absorption layer on the metal halide skeleton layer with the suede structure in a shape following manner. The manufacturing method of the perovskite thin film provided by the invention is used for manufacturing the solar cell.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a method for manufacturing a perovskite thin film, a solar cell and a laminated cell. Background technique [0002] A tandem solar cell is a solar cell formed by connecting a top cell with a wide bandgap and a bottom cell with a narrow bandgap in series. Compared with single-junction solar cells, tandem solar cells utilize the energy of photons more comprehensively, so the efficiency is higher. [0003] At present, in perovskite-silicon-based tandem solar cells, common methods for making perovskite layers include solution method and vacuum evaporation method. The perovskite layer prepared by the solution method on the textured structure is easy to deposit to the bottom of the textured structure, resulting in the spire of the textured structure not being completely covered, it is difficult to form a complete perovskite film, and a short circuit occurs. The vacuum evaporati...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/46H01L51/44H01L51/42
CPCY02E10/549
Inventor 秦媛何博王永磊刘杨
Owner LONGI SOLAR TECH (XIAN) CO LTD
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