A kind of silicon carbon-graphite negative electrode material and its preparation method and application
A graphite negative electrode and silicon carbon technology, applied in battery electrodes, structural parts, electrical components, etc., can solve the problems of easy aggregation of silicon particles, capacity attenuation, and inability to use graphite composites
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Embodiment 1
[0094] The present embodiment is a preparation method of a silicon carbon-graphite negative electrode material, comprising the following steps:
[0095] S1: Add 1g carbon fiber (Beijing Deke Island Gold Technology Co., Ltd., VGCF150nm-200nm nano carbon fiber) to 100g potassium chlorate and sulfuric acid mixed solution (the mass fraction of potassium chlorate is 5%, the mass fraction of sulfuric acid is 15%), at 65 The reaction was stirred at °C for 1 h. After the reaction was completed, it was filtered and washed with deionized water for 5 times to obtain carbon oxide fibers.
[0096] The graphite particles (G810738, Shanghai McLean Biochemical Technology Co., Ltd., about 11 μm) were calcined for 1.5 h in an ammonia atmosphere and at a temperature of 800 ° C to obtain nitrogen-doped graphite particles (the nitrogen-doped content measured by an elemental analyzer was 0.8%).
[0097] Nitrogen-doped graphite particles and oxidized carbon fibers were added to water (the mass rati...
Embodiment 2
[0119] This embodiment is a preparation method of a silicon carbon-graphite negative electrode material. The difference from Embodiment 1 is that the deposition time of titanium nitride in this embodiment is 80s.
[0120] The difference between the carbon silicon-graphite negative electrode material prepared in this example and Example 1 is:
[0121] The thickness of the zirconium nitride layer is 15 nm to 20 nm.
Embodiment 3
[0123] This embodiment is a preparation method of a silicon carbon-graphite negative electrode material. The difference from Embodiment 1 is that the deposition time of titanium nitride in this embodiment is 60s.
[0124] The difference between the carbon silicon-graphite negative electrode material prepared in this example and Example 1 is:
[0125] The thickness of the zirconium nitride layer is 10 nm to 15 nm.
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