Silicon-based semiconductor laser and manufacturing method thereof
A manufacturing method and semiconductor technology, which are applied in the manufacture of semiconductor lasers, semiconductor devices, and semiconductor/solid-state devices, etc., can solve the problems of inability to collect and confine electrons and holes, small conduction band discontinuities, and weak direct luminous efficiency.
Pending Publication Date: 2022-04-12
KUNSHAN HUATAI ELECTRONICS TECH CO LTD
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Problems solved by technology
[0005] However, in the past 40 years, there has been no major breakthrough in SiGe or Ge / SiGe electrical injection lasers. From the perspective of device physics, the following two obstacles have been encountered: 1. Si, SiGe and Ge are all indirect bandgap semiconductor materials. - The direct luminous efficiency of hole pairs is extremely weak, which is 4 to 5 orders of magnitude lower than that of III-V group semiconductor materials with direct band gaps; 2. Si / SiGe and Ge / SiGe heterojunction conduction bands are different from compound semiconductors , the discontinuity of the conduction band of the heterojunction is very small, and even a second type of superlattice will appear, which cannot effectively collect and confine electrons and holes in the ultra-thin light-emitting region at the same time, so it is difficult to effectively realize the laser in the light-emitting region. population inversion required for lasing
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Embodiment 1
[0069] In order to make the Γ-Γ luminescent recombination transition more likely to occur in the silicon-based semiconductor laser provided by the embodiment of the present invention, it is necessary to reduce the energy of the Γ energy valley of the conduction band as much as possible, so as to make it as close to the L energy valley as possible, or even lower than the L energy valley. In this embodiment, germanium and silicon are selected to form a quantum well system.
[0070] Such as Figure 8a , Figure 8b as shown, Figure 8a , Figure 8b The energy band diagrams of germanium under the conditions of no strain and tensile strain are shown respectively, where the energy band of germanium is shown in Fig. 8(a) when there is no strain, between the Γ energy valley and L energy valley The energy difference is ΔE1=0.178eV; and under tensile strain, the energy difference between the Γ energy valley and the L energy valley of germanium is ΔE2, which can be reduced to zero, so ...
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The invention discloses a silicon-based semiconductor laser and a manufacturing method thereof. The laser comprises a first diode structure, a light-emitting active area and a second diode structure, the light-emitting active area is arranged between the first diode structure and the second diode structure, and when a preset reverse bias voltage is applied to the first diode structure and / or the second diode structure, the light-emitting active area emits light. The first diode structure and / or the second diode structure can inject electrons into the light-emitting active area and generate an electric field trap for the electrons in the light-emitting active area, so that the electrons are limited in the light-emitting active area. According to the silicon-based semiconductor laser provided by the invention, effective collection of electron carriers of electron-hole pairs in a light-emitting medium is realized by adopting reverse injection, and meanwhile, population inversion of conduction band energy valley electrons and valence band top holes capable of emitting light can be effectively realized, so that electric injection lasing of the silicon-based laser is realized.
Description
technical field [0001] The invention relates to a semiconductor laser, in particular to a silicon-based semiconductor laser and a manufacturing method thereof, belonging to the technical field of semiconductors. Background technique [0002] Silicon Photonics is an emerging discipline that utilizes silicon-based semiconductor technology to realize the integration of optoelectronic functions into a single chip. Because it is based on low-cost, low-power consumption, mature silicon-based large-scale integrated circuit technology, high integration, compact structure, and optical interconnection. However, there are still some problems in silicon photonics that limit its application, especially the problem of light source. Because the silicon material itself has an indirect bandgap, silicon-based lasers are recognized as unsolved problems in the world, and no major technological breakthroughs have yet occurred. [0003] The technical route of silicon-based semiconductor lasers ...
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IPC IPC(8): H01S5/042H01S5/026H01L29/861H01L29/872H01L21/329
CPCH01S5/042H01L29/66083H01S5/026H01L29/872H01L29/861H01S5/062H01S5/343
Inventor 张耀辉马四光刘伟
Owner KUNSHAN HUATAI ELECTRONICS TECH CO LTD