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Vertical structure electric injection pyramid micro-cavity laser and preparation method thereof

A vertical structure and pyramid technology, which is applied in the field of a new type III nitride vertical structure electric injection pyramid table microcavity laser and its preparation, can solve the problems of immaturity, damaged material quality, and high implementation requirements, and can reduce light scattering loss, The effect of simplifying design and growth, improving crystal quality

Active Publication Date: 2019-04-30
诺视科技(苏州)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there are still many shortcomings in the microcavity design of lasers. For example, III-Nitrides microdisk microcavity lasers have disadvantages such as complex and immature growth process, dry etching damages material quality, and undercut structure is not conducive to the realization of electrical injection. Crystal lasers have the disadvantages of complex manufacturing process and high-precision processing equipment, metal plasmon lasers have large losses, high requirements for realization, and difficult electrical injection.

Method used

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  • Vertical structure electric injection pyramid micro-cavity laser and preparation method thereof
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  • Vertical structure electric injection pyramid micro-cavity laser and preparation method thereof

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Embodiment 1

[0046] The invention provides a kind of preparation method of vertical structure electrical injection pyramidal microcavity laser, comprises the following steps:

[0047] (1) The n-GaN layer 2 is sequentially epitaxially grown on the sapphire substrate 1 by MOCVD method, with a thickness of about 3 μm; GaN / In 0.1 Ga 0.9 N (8 / 2nm) multiple quantum well 3 with a thickness of about 50nm; p-GaN layer 4 with a thickness of about 200nm, such as figure 1 shown;

[0048] (2) Depositing a Ni / Ag / Pt / Au metal mirror layer 5 on the p-GaN layer 4 by electron beam evaporation, the thickness of which is 0.5 / 200 / 100 / 200nm respectively;

[0049] (3) Cu plating is deposited on the metal reflector layer 5, as the bottom electrode 6, its thickness is about 100 μ m, as figure 2 shown;

[0050] (4) Adopt laser lift-off technique to peel off sapphire substrate 1, obtain the epitaxial wafer after peeling off, as image 3 shown;

[0051] (5) ICP etching the stripped epitaxial wafer to remove the...

Embodiment 2

[0056] The invention provides a kind of preparation method of vertical structure electrical injection pyramidal microcavity laser, comprises the following steps:

[0057] (1) The n-GaN layer 2 is sequentially epitaxially grown on the sapphire substrate 1 by MOCVD method, with a thickness of about 3 μm; GaN / In 0.06 Ga 0.94 N (8 / 2nm) multiple quantum well 3 with a thickness of about 50nm; p-GaN layer 4 with a thickness of about 200nm;

[0058] (2) Depositing a Ni / Ag / Pt / Au metal mirror layer 5 on the p-GaN layer 4 by electron beam evaporation, the thickness of which is 0.5 / 200 / 100 / 200nm respectively;

[0059] (3) Cu plating is deposited on the metal reflector layer 5, as the bottom electrode 6, and its thickness is about 100 μm;

[0060] (4) using laser lift-off technology to lift off the sapphire substrate 1 to obtain the peeled epitaxial wafer;

[0061] (5) ICP etching the stripped epitaxial wafer to remove the 1 μm thick n-GaN layer 2;

[0062] (6) Put the peeled epitaxial...

Embodiment 3

[0066] The invention provides a kind of preparation method of vertical structure electrical injection pyramidal microcavity laser, comprises the following steps:

[0067] (1) The n-GaN layer 2 is sequentially epitaxially grown on the sapphire substrate 1 by MOCVD method, with a thickness of about 3 μm; GaN / In 0.22 Ga 0.78 N (8 / 2nm) multiple quantum well 3 with a thickness of about 50nm; p-GaN layer 4 with a thickness of about 200nm;

[0068] (2) Depositing a Ni / Ag / Pt / Au metal mirror layer 5 on the p-GaN layer 4 by electron beam evaporation, the thickness of which is 0.5 / 200 / 100 / 200nm respectively;

[0069] (3) Cu plating is deposited on the metal reflector layer 5, as the bottom electrode 6, and its thickness is about 100 μm;

[0070] (4) using laser lift-off technology to lift off the sapphire substrate 1 to obtain the peeled epitaxial wafer;

[0071] (5) ICP etching the stripped epitaxial wafer to remove the 1 μm thick n-GaN layer 2;

[0072] (6) Put the stripped epitaxi...

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Abstract

The invention discloses a vertical structure electric injection pyramid micro-cavity laser and a preparation method thereof, which belong to the technical field of semiconductor. A group-III nitride is used as a gain medium, a frustum-shaped pyramid micro-cavity is used as a resonant cavity, a substrate of a vertical structure is used as a bottom electrode, and a top electrode is made on the top of the pyramid. Based on the fact that the group-III elements (In, Ga, Al) in the group-III nitride are adjustable, the laser can cover the bands from infrared (InN) to deep ultraviolet (AlN). The pyramid micro-cavity is obtained by wet etching of nitrogen polar surfaces. The process is simple and can improve the quality of crystals. Lasing is achieved by utilizing the light limiting effect of themetal mirror layer on the side wall and bottom of the pyramid. The epitaxy of the vertical structure is etched by wet etching of nitrogen polar surfaces to obtain a discrete pyramid frustum micro-cavity, the top electrode is made on the top of the pyramid frustum by electron beam exposure, metal evaporation and other processes, and a current is injected under forward bias voltage to realize electric injection and directional light output of the pyramid frustum micro-cavity.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a vertical structure electric injection pyramidal microcavity laser and a preparation method thereof, in particular to a novel III group nitride vertical structure electric injection pyramidal microcavity laser and a preparation method thereof. Background technique [0002] Laser diodes are currently one of the most commonly used lasers, through the spontaneous recombination of electrons and holes on both sides of the PN junction of the diode, thereby generating spontaneous emission fluorescence. The miniaturization of lasers means that lasers have a size or mode volume close to or smaller than the wavelength of emitted light; like the development of electronic products, the upgrade of optoelectronic systems also requires the development of miniaturization and integration of optoelectronic devices and components. Microlasers have special application prospects, including on-c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/042H01S5/10H01S5/20H01S5/34H01S5/343
CPCH01S5/0425H01S5/1042H01S5/20H01S5/34H01S5/34333
Inventor 汪炼成万荣桥林蕴
Owner 诺视科技(苏州)有限公司