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High-energy-storage-density wide-working-temperature component gradient structure thin film and preparation method thereof

A technology with wide operating temperature and high energy storage density, applied in metal material coating process, components of fixed capacitors, vacuum evaporation coating, etc., can solve the problems of low operating temperature and low energy storage density of lead-free films, Achieve the effect of reducing interface polarization, increasing energy storage efficiency and operating temperature, reducing defects and leakage

Pending Publication Date: 2022-04-22
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problems existing in the prior art, the object of the present invention is to provide a high energy storage density wide working temperature gradient structure film and its preparation method, the present invention can overcome the low energy storage density of the lead-free film low problem

Method used

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  • High-energy-storage-density wide-working-temperature component gradient structure thin film and preparation method thereof
  • High-energy-storage-density wide-working-temperature component gradient structure thin film and preparation method thereof
  • High-energy-storage-density wide-working-temperature component gradient structure thin film and preparation method thereof

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preparation example Construction

[0032] The preparation method of the film with high energy storage density and wide working temperature composition gradient structure of the present invention comprises the following steps:

[0033] Step 1. Target preparation: for growing BaHf x Ti 1-x o 3 The ceramic target of the thin film adopts BaCO with a purity level of 4-5N 3 Powder, HfO 2 Powder and TiO 2 powder by BaHf x Ti 1-x o 3 The stoichiometric ratio, where 0.17≤x≤0.32, is prepared by traditional ceramic technology; when preparing ceramic targets, the sintering temperature is lower than the phase formation temperature of each system by 100-200 °C.

[0034] Step 2, put the substrate, vacuum: Nb:SrTiO 3 The substrate is placed on the heating platform, and the vacuum degree in the deposition chamber is less than 1×10 by using a mechanical pump and a molecular pump. -5 mbar.

[0035] Step 3. Ventilate and heat up: Infuse 200 mbar of argon-oxygen mixed gas with a volume ratio of 1 / 1, then raise the tempera...

Embodiment 1

[0041] The preparation method of the film with high energy storage density and wide working temperature composition gradient structure in this embodiment includes the following steps:

[0042] Step 1. Target preparation: for growing BaHf 0.17 Ti 0.83 o 3 / BaHf 0.25 Ti 0.75 o 3 / BaHf 0.32 Ti 0.68 o 3 The ceramic target of the composition gradient structure multilayer film with a cycle number of 1 uses BaCO with a purity level of 5N 3 Powder, HfO 2 Powder and TiO 2 The powder is prepared by traditional ceramic technology according to the ratio; when preparing ceramic targets, the sintering temperature is lower than the phase formation temperature of each system by 100 °C.

[0043] Step 2, put the substrate, vacuum: Nb:SrTiO 3 The substrate is placed on the heating platform, and the vacuum degree in the deposition chamber is less than 1×10 by using a mechanical pump and a molecular pump. -5 mbar.

[0044] Step 3. Ventilate and heat up: Infuse 200 mbar of argon gas an...

Embodiment 2

[0051] The preparation method of the film with high energy storage density and wide working temperature composition gradient structure in this embodiment includes the following steps:

[0052] Step 1. Target preparation: for growing BaHf 0.32 Ti 0.68 o 3 / BaHf 0.25 Ti 0.75 o 3 / BaHf 0.17 Ti 0.83 o 3 The ceramic target of the composition gradient structure film with a cycle number of 1 uses BaCO with a purity level of 5N 3 Powder, HfO 2 Powder and TiO 2 The powder is prepared by traditional ceramic technology according to the ratio; when preparing ceramic targets, the sintering temperature is lower than the phase formation temperature of each system by 100 °C.

[0053] Step 2, put the substrate, vacuum: Nb:SrTiO 3 The substrate is placed on the heating platform, and the vacuum degree in the deposition chamber is less than 1×10 by using a mechanical pump and a molecular pump. -5 mbar.

[0054] Step 3. Ventilation and temperature rise: 200 mbar of argon gas and oxyge...

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Abstract

The invention discloses a high-energy-storage-density wide-working-temperature component gradient structure thin film and a preparation method thereof.The high-energy-storage-density wide-working-temperature component gradient structure thin film comprises an Nb: SrTiO3 substrate and a component gradient structure thin film, and the component gradient structure thin film is arranged on the surface of the Nb: SrTiO3 substrate; the component gradient structure film is a BaHf < x > < 1 > Ti < 1-x > < 1 > O < 3 > / BaHf < x > < 2 > Ti < 1-x > < 2 > O < 3 > / BaHf < x > < 3 > Ti < 1-x > < 3 > O < 3 > film, wherein x is larger than or equal to 0.17 and smaller than or equal to 0.32. During preparation, a BaHf < x > 1Ti < 1-x > 1O3 / BaHf < x > 2Ti < 1-x > 2O3 / BaHf < x > 3Ti < 1-x > 3O3 component gradient structure film is prepared on the surface of an Nb: SrTiO3 substrate by utilizing a ceramic target material of a BaHf < x > Ti < 1-x > O3 film in a magnetron sputtering manner, and then annealing is performed to obtain the component gradient structure film with high energy storage density and wide working temperature. The lead-free film with high energy storage density and wide working temperature has the characteristics of high energy storage density and wide temperature range.

Description

technical field [0001] The invention relates to the field of energy storage thin film materials, in particular to a thin film with high energy storage density and wide working temperature composition gradient structure and a preparation method thereof. Background technique [0002] The continuous consumption of global energy and the aggravation of environmental pollution force people to look for cleaner energy. Therefore, the collection and storage of energy is particularly important. Among many energy storage components, dielectric capacitors are widely used in various power electronic devices because of their advantages such as high power density, fast charging and discharging speed, and long service life. However, their relatively low energy storage density and low operating temperature compared to other energy storage elements such as fuel cells, supercapacitors, and lithium-ion batteries greatly limit their applications in harsh environments. On the one hand, under th...

Claims

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Application Information

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IPC IPC(8): H01G4/08H01G4/10C23C14/08C23C14/35C23C14/58
CPCH01G4/08H01G4/10C23C14/08C23C14/35C23C14/5806Y02E60/13
Inventor 刘明马春蕊陆锐
Owner XI AN JIAOTONG UNIV
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