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Polishing pad, method for manufacturing the same, and method for manufacturing semiconductor device using the same

A technology for polishing pads and semiconductors, applied in the field of polishing pads, can solve problems such as complex processes and particle precipitation

Pending Publication Date: 2022-05-06
SK恩普士有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the case of using a cerium oxide-based polishing agent, there is a problem that a sedimentation phenomenon occurs due to aggregation between particles, and in order to prevent this phenomenon, it is necessary to use a slurry sedimentation prevention device capable of preventing sedimentation instead of the existing equipment
[0007] However, this method has a high probability of occurrence of defects due to the difference in basic properties between the slurries such as agglomeration caused by the difference in pH between the silica-based slurry and the ceria-based polishing agent, and due to the need to Different polishing heads are used for the polishing process on the platen, so the process becomes complicated and two devices are required

Method used

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  • Polishing pad, method for manufacturing the same, and method for manufacturing semiconductor device using the same
  • Polishing pad, method for manufacturing the same, and method for manufacturing semiconductor device using the same
  • Polishing pad, method for manufacturing the same, and method for manufacturing semiconductor device using the same

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0191] The preparation method of the polishing pad may include the step of processing at least one surface of the polishing layer. The processing step may be a step of forming a groove.

[0192] In another embodiment, the step of processing at least one surface of the polishing layer may include at least one of the following steps: a first step of forming a groove on at least one surface of the polishing layer; a second step The second step is to perform line turning on at least one surface of the polishing layer; and the third step is to roughen at least one surface of the polishing layer.

[0193] In the first step, the groove may include at least one of the following grooves: a concentric groove formed at a predetermined interval from the center of the polishing layer; The center is continuously connected to the radial groove of the edge of the polishing layer.

[0194] In the second step, the line turning process may be performed in such a manner that the polishing layer...

Embodiment 1

[0206] Manufacturing of Polishing Pads

[0207] In the casting equipment provided with the mixture injection line of urethane-based prepolymer, curing agent and solid blowing agent, the prepolymer box was filled with urethane-based prepolymer containing 9% by weight of unreacted NCO. polymer, and the curing agent tank was filled with bis(4-amino-3-chlorophenyl)methane (bis(4-amino-3-chlorophenyl)methane, product of Ishihara). In addition, 3 parts by weight of a solid foaming agent was mixed in advance with respect to 100 parts by weight of the urethane-based prepolymer, and then poured into the prepolymer tank.

[0208] The urethane-based prepolymer and curing agent were added to the stirring head at a certain speed through each injection line while stirring. At this time, the molar equivalent of the NCO group of the urethane-based prepolymer and the reactive group of the curing agent were adjusted to 1:1, and the total addition amount was maintained at a rate of 10 kg / min. ...

experiment example 1

[0217] Physical Properties of Polishing Pads and Polishing Rate Measurements

[0218] (1) Hardness

[0219] 1) The Shore D (Shore D) hardness of the polishing pads prepared according to the examples and comparative examples was measured, and after cutting the polishing pads with a size of 2cm×2cm (thickness: 2mm) at a temperature of 25°C and a temperature of 50±5 % humidity environment for 16 hours. Then, 5 points were measured using a hardness meter (D-type hardness meter) of an HPE III Shore Hardness Tester (Digital Shore Hardness Tester HPE III), and the hardness of the polishing pad was measured under the condition that the measurement time was 30 seconds.

[0220] (2) modulus of elasticity

[0221] To the polishing pad prepared according to said embodiment and comparative example respectively, use universal testing machine (UTM, (AG-XPlus (SHIMADZU)) and extensometer to test with the speed of clamping distance 60mm, 500mm / min, obtain the The slope in the 20 to 70% regi...

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PUM

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Abstract

Provided are: a polishing pad which is capable of maintaining polishing performance, such as polishing speed and polishing profile, required in a polishing process, and which is capable of minimizing defects occurring in a wafer in the polishing process, and which is capable of polishing films of different materials to have the same level of flatness even when the films are polished at the same time; when the polishing pad is applied in the CMP process, the polishing pad can be distinguished according to the physical property value of the polishing pad without directly performing a polishing test, so that the optimal polishing selection rate and the performance of the polishing process are controlled.

Description

technical field [0001] The invention relates to a polishing pad used in a chemical mechanical planarization (Chemical Mechanical Planarization, CMP) process, a preparation method of the polishing pad and a manufacturing method of a semiconductor device using the polishing pad. Background technique [0002] In the semiconductor manufacturing process, a chemical mechanical planarization (CMP) process is as follows: A slurry is supplied in a state where a wafer is attached to a head and brought into contact with the surface of a polishing pad formed on a platen , subjecting the wafer surface to chemical treatment, and at the same time mechanically planarizing the concave and convex portions of the wafer surface by making the platen and the head move relative to each other. [0003] Usually, when performing the CMP (Chemical Mechanical Polishing) process for forming the device isolation film of a semiconductor device, in order to increase the polishing selectivity of the oxide f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/20B24B37/24H01L21/306B29C44/02B29C44/34B29C44/38B29C69/00B29C69/02B29K433/04B29L7/00
CPCB24B37/20B24B37/24H01L21/30625B29C44/02B29C44/3457B29C44/3446B29C44/38B29C44/3415B29C69/02B29C69/001B29L2007/00B29K2433/04B24B37/205B24B37/22B24B37/015B24B37/26
Inventor 许惠暎徐章源安宰仁尹钟旭
Owner SK恩普士有限公司