Pre-lithiated silica composite material, preparation method and application
A composite material, pre-lithiated silicon technology, applied in battery electrodes, circuits, electrical components, etc., can solve the problem of low efficiency of silicon oxide for the first time, and solve the problems of difficult growth control, good fast charging performance, and reduced volume expansion Effect
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Embodiment 1
[0062] Silicon oxide coating: commercially available silicon oxide is pulverized by a jet mill until the D50 is 4.3um and the D100 is 13.5um, and then acetylene gas is used for gas-phase coating. The coating temperature is controlled at 700°C and the coating time is 4h. Amorphous SiO@C with coated carbon content of 3.6% and D50 of 4.6um was prepared.
[0063] Preparation of precursors: Take LiH powder with a D50 of 5.8um and amorphous SiO@C powder according to the Li / Si material ratio of 0.45, and uniformly mix them under nitrogen protection to prepare a pre-lithiated precursor.
[0064] Pre-lithiation reaction: put the uniformly mixed pre-lithiation precursor in a microwave sintering furnace, set the sintering frequency of the microwave oven to 2400MHz and power to 3.8KW under a nitrogen atmosphere, and heat it to 600°C at a rate of 20°C / min before sintering After 60 minutes, cool down to room temperature with the furnace, take out and sieve to obtain the high first-efficienc...
Embodiment 2
[0068] Silicon oxide coating: commercially available silicon oxide is pulverized by a jet mill until D50 is 3.1um and D100 is 11.7um, then gas-phase coating is performed with acetylene gas, the coating temperature is controlled at 850°C, and the coating time is 6h. Preparation Amorphous SiO@C with a coated carbon content of 7.8% and a D50 of 3.5um was obtained.
[0069] Preparation of precursors: LiH powder with a D50 of 3.2um and amorphous SiO@C powder are mixed uniformly under the protection of nitrogen to prepare a pre-lithiated precursor according to the Li / Si material ratio of 0.60.
[0070] Pre-lithiation reaction: put the uniformly mixed pre-lithiation precursor in a microwave sintering furnace, set the sintering frequency of the microwave oven to 2400MHz and power to 1.0KW under a nitrogen atmosphere, and heat to 450°C at a rate of 10°C / min before sintering After 90 minutes, cool down to room temperature with the furnace, take out and sieve to obtain high first-efficie...
Embodiment 3
[0072] Silicon oxide coating: commercially available silicon oxide is pulverized by a jet mill until D50 is 5.8um and D100 is 14.6um, and then gas-phase coating is carried out with acetylene gas. The coating temperature is controlled at 650°C and the coating time is 10h. Amorphous SiO@C with a coated carbon content of 4.3% and a D50 of 6.4um was obtained.
[0073] Preparation of precursor: Take LiH powder with a D50 of 8.0um and amorphous SiO@C powder according to the Li / Si material ratio of 0.53, and uniformly mix them under nitrogen protection to prepare a pre-lithiated precursor.
[0074] Pre-lithiation reaction: put the uniformly mixed pre-lithiation precursor in a microwave sintering furnace, set the microwave oven sintering frequency to 2450MHz and power to 6.0KW under a nitrogen atmosphere, and heat to 600°C at a rate of 30°C / min before sintering After 45 minutes, cool down to room temperature with the furnace, take out and sieve to obtain high first-efficiency pre-lith...
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