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High-reliability aluminum nitride copper-coated ceramic substrate and preparation method thereof

A technology of aluminum nitride copper clad and aluminum nitride ceramics, which is applied in the field of copper clad laminates, can solve the problems of substrate peeling strength and thermal conductivity decline, low yield rate, poor wettability, etc., to achieve improved interface wettability, high peeling The effect of strength and high reliability

Active Publication Date: 2022-05-13
南通威斯派尔半导体技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the poor wettability of the interface between AlN and metal Cu, when the existing DBC method is used to prepare aluminum nitride copper-clad substrates, a large number of bubbles will be generated, which exist at the interface between copper and aluminum nitride, resulting in poor peel strength and thermal conductivity of the substrate. The performance is greatly reduced and the yield rate is low

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] A method for preparing a high-reliability aluminum nitride copper-clad ceramic substrate, comprising the following steps:

[0028] (1) Take aluminum nitride powder, put it in 6mol / L phosphoric acid solution, ultrasonically disperse it for 1h, take it out, filter and wash it with deionized water, dry it in vacuum at 70°C for 2h, take 30wt% aluminum nitride powder, 64wt% Mix silicon nitride powder and 6wt% sintering aid evenly, use absolute ethanol as ball milling medium, ball mill for 10 hours, rotary evaporate for 20 minutes, heat-preserve and dry at 110°C for 5 hours, and sieve to obtain ceramic powder; take the ceramic powder and place it in a mold Medium-dry press molding, air pressure sintering under nitrogen environment, the pressure is 5MPa, the sintering temperature is 17000°C, the holding time is 1h, and the heating rate is 10°C / min; the aluminum nitride ceramic substrate is obtained;

[0029] The sintering aid includes silicon magnesium nitride powder, yttrium ...

Embodiment 2

[0034] A method for preparing a high-reliability aluminum nitride copper-clad ceramic substrate, comprising the following steps:

[0035] (1) Take aluminum nitride powder, put it in 6mol / L phosphoric acid solution, ultrasonically disperse for 1.2h, take it out, filter and wash with deionized water, dry it in vacuum at 75°C for 1.5h, take 30wt% aluminum nitride powder after drying, Mix 64wt% silicon nitride powder and 6wt% sintering aid evenly, use absolute ethanol as the ball milling medium, mill for 12 hours, rotary evaporate for 25 minutes, heat-preserve and dry at 115°C for 4.5 hours, and sieve to obtain ceramic powder; take the ceramic powder, Put it in a mold for dry pressing, and carry out air pressure sintering under a nitrogen atmosphere, with a pressure of 5 MPa, a sintering temperature of 1725°C, a holding time of 0.8h, and a heating rate of 10°C / min; to obtain an aluminum nitride ceramic substrate;

[0036]The sintering aid includes silicon magnesium nitride powder,...

Embodiment 3

[0041] A method for preparing a high-reliability aluminum nitride copper-clad ceramic substrate, comprising the following steps:

[0042] (1) Take aluminum nitride powder, place it in 6mol / L phosphoric acid solution, ultrasonically disperse it for 1.5h, take it out, filter and wash it with deionized water, dry it in vacuum at 80°C for 1h, take 30wt% aluminum nitride powder, 64wt% aluminum nitride powder after drying % silicon nitride powder and 6wt% sintering aid were mixed evenly, using absolute ethanol as the ball milling medium, ball milling for 10-15 hours, rotary evaporation for 30 minutes, heat preservation and drying at 120°C for 4 hours, and sieving to obtain ceramic powder; take the ceramic powder, Put it in a mold for dry pressing, and carry out air pressure sintering under a nitrogen atmosphere, the pressure is 5MPa, the sintering temperature is 1750°C, the holding time is 0.5h, and the heating rate is 10°C / min; the aluminum nitride ceramic substrate is obtained;

...

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Abstract

According to the high-reliability aluminum nitride copper-coated ceramic substrate and the preparation method thereof, in order to achieve advantage complementation of all single-phase materials, aluminum nitride powder, silicon nitride powder and a sintering aid are used as main materials, the composite aluminum nitride ceramic substrate is prepared through sintering, the requirements for high strength, high heat conduction, low loss and the like are met, the comprehensive performance is excellent, and the application prospect is wide. And the practicability is good. The process is reasonable in design, the scheme is easy to operate, the interface wettability between A1N and metal Cu can be effectively improved due to the existence of the ceramic slurry layer and the solder layer, aluminum nitride and the copper sheet are tightly combined, the copper-clad substrate has the advantages of being high in peel strength and reliability, the method can be suitable for preparing semiconductor coolers and power semiconductor modules, and the application range is wide. Particularly, the LED lamp has high practicability for large-scale and super-large-scale integrated circuits and high-power LEDs.

Description

technical field [0001] The invention relates to the technical field of copper-clad laminates, in particular to a high-reliability aluminum nitride copper-clad ceramic substrate and a preparation method thereof. Background technique [0002] Aluminum nitride (AlN) ceramics have excellent thermal conductivity, and their thermal conductivity can reach 150W / m·K~200W / m·K, which is about Al 2 o 3 10 times that of silicon, and the thermal expansion coefficient is close to that of silicon, which is a substitute for Al 2 o 3 One of the ideal substrate materials for ceramics. However, due to the poor wettability of the interface between AlN and metal Cu, when the existing DBC method is used to prepare aluminum nitride copper-clad substrates, a large number of bubbles will be generated, which exist at the interface between copper and aluminum nitride, resulting in poor peel strength and thermal conductivity of the substrate. The performance is greatly reduced, and the yield rate is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/584C04B35/622C04B35/64C04B37/02
CPCC04B35/584C04B35/622C04B35/64C04B37/023C04B2235/658C04B2235/656C04B2235/6567C04B2235/3225C04B2235/3852C04B2235/3865C04B2235/445C04B2235/96C04B2235/9607C04B2237/125C04B2237/127C04B2237/126C04B2237/368C04B2237/407C04B2237/083C04B2237/55
Inventor 俞晓东刘晓辉杨恺
Owner 南通威斯派尔半导体技术有限公司