Low-cost wet processing method for semiconductor photoelectric cathode of third-generation image intensifier

Abstract

The invention relates to the technical field of gallium arsenide photoelectric cathode preparation methods, in particular to a low-cost wet processing method for a third-generation image intensifier semiconductor photoelectric cathode, which can solve the problems of substrate residue and incomplete corrosion by adjusting the proportion of chemical reagents and the temperature of a corrosion solution in the corrosion process and controlling the corrosion rate and the corrosion uniformity. Meanwhile, the corrosion rate is controlled in a segmented mode, the wet processing efficiency of the gallium arsenide epitaxial wafer is properly improved, the production rate is increased, and the problems that the substrate of the gallium arsenide epitaxial wafer is corroded uncleanly, residues exist, and the surface is rough are solved. A low-cost wet processing method for a semiconductor photoelectric cathode of a third-generation image intensifier comprises the steps that S1, the height h1 of a cathode assembly substrate before corrosion is measured through a micrometer, and the corrosion ending time of the substrate is quantitatively judged through the height change difference; and S2, an ultrasonic cleaning machine is adopted, the frequency is 40 KHz, and isopropanol and deionized water are used for conducting oil removal and cleaning on the gallium arsenide cathode assembly with K9 glass as window glass.

Description

technical field [0001] The invention relates to the field of preparation methods of gallium arsenide photocathode, in particular to a low-cost third-generation image intensifier semiconductor photocathode wet processing method. Background technique [0002] The core component of the low-light night vision device is the image intensifier, referred to as the image tube. At present, the best practical one is the third-generation image tube. One of its most important features is the use of the second-generation semiconductor gallium arsenide as the emission of the photocathode. GaAs has the characteristics of high sensitivity, wide light response range and high electron mobility, and is especially suitable for making GaAs photocathode electron sources. GaAs photocathode electron sources mainly include photon absorption, electron transition, and electron diffusion. , electron escape and other processes, the gallium arsenide photocathode absorbs light of a certain wavelength, such...

AI Technical Summary

Problems solved by technology

[0004] During the processing of gallium arsenide epitaxial wafers, there are problems of unclean substrate corrosion and residues, resulting in unclean and rough surfaces on the negative side

[0005] The surface of the GaAs photocathode barrier layer has inconsistent corrosion depth and poor barrier effect, which affects the corrosion effect of the subsequent emission layer. There is white fog on the surface of the emission layer, which reduces the surface quality and cathode activation sensitivity.

[0006] There are through holes and more particles in the surface cleaning process of gallium arsenide photocathode, which affects the cathode imaging quality

Images