Preparation method of catalyst dual-assisted two-dimensional transition metal chalcogenide film

A technology of transition metal chalcogenides and compounds, applied in chemical instruments and methods, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as uneven film crystal quality, uncontrollable film thickness, and uneven source partial pressure , to avoid uneven crystal quality, shorten sublimation time, and good repeatability

Active Publication Date: 2022-06-03
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Although significant progress has been made in the preparation of TMDs materials by CVD, there are still many problems, such as uncontrollable film thickness, poor repeatability, uneven source partial pressure resulting in uneven film crystal quality, etc.
It is still challenging to synthesize large-area, continuous, high-quality, and layer-controllable TMDs thin films by CVD

Method used

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  • Preparation method of catalyst dual-assisted two-dimensional transition metal chalcogenide film
  • Preparation method of catalyst dual-assisted two-dimensional transition metal chalcogenide film
  • Preparation method of catalyst dual-assisted two-dimensional transition metal chalcogenide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Preparation of monolayer MoS 2 film, see figure 2 , the specific implementation steps are as follows:

[0043] Step a. Weigh 200mg of sulfur powder in a common crucible and place it in the center of the A temperature zone of the double-temperature zone tube furnace;

[0044] Step b. 5 mg of solid NaCl was dissolved in 1 mL of deionized water, 10 mg of MoO 3 The powder is poured into this NaCl solution, and after drying the moisture, it is placed in a quartz boat with one end open and one end closed (such as figure 1 shown), and the side wall of the closed end is 2cm apart;

[0045] Step c. On cleaning the SiO 2 SiO / Si substrate2 The surface was spin-coated with 100 μL of 0.3 mmol / L NaCl solution, and dried with a nitrogen gun;

[0046] Step d. Place the substrate on the SiO 2 The closed end of the quartz boat whose one end is open and one end is closed is buckled face down to form a semi-closed structure, and the quartz boat is placed in the center of the B tempe...

Embodiment 2

[0051] Preparation of three-layer MoS 2 The difference between the thin film and Example 1 is that in step c, the concentration of the NaCl solution is 0.5 mmol / L.

Embodiment 3

[0053] Preparation of five-layer MoS 2 The difference between the thin film and Example 1 is that in step c, the concentration of the NaCl solution is 0.8 mmol / L.

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Abstract

The invention discloses a preparation method of catalyst dual-assisted two-dimensional transition metal chalcogenide films (TMDs). According to the method, in the process of preparing the TMDs thin film through a chemical vapor deposition method, a quartz boat with one open end and one closed end is adopted for containing a metal source, the growth face of a substrate is buckled to the closed end of the quartz boat downwards, a semi-closed structure is formed, a carrier gas carries the source to form vortexes below the substrate, the source partial pressure of the growth face of the substrate is larger and more uniform, and the TMDs thin film is obtained. The problems of film discontinuity and non-uniform crystal quality are avoided; meanwhile, a halide catalyst dual-assistance method is adopted, and catalysts are added into a metal source and a substrate growth surface at the same time, so that the source partial pressure is further improved, and the growth time is shortened; and controllable growth of TMDs films with different layer numbers is realized by changing the concentration of the catalyst solution spin-coated on the surface of the substrate. The method for preparing the TMDs film has the advantages of controllable film thickness, complete crystal form and high repeatability.

Description

technical field [0001] The invention belongs to the technical field of preparing two-dimensional materials, in particular to a preparation method of a two-dimensional transition metal chalcogenide (TMDs) thin film. Background technique [0002] Two-dimensional transition metal chalcogenides MX 2 (M=Mo, W, X=S, Se, Te) is another new material after graphene. Its unique energy band structure effectively makes up for the shortcomings of graphene’s zero band gap and is expected to be widely used in micro Nano-optical devices, biosensors, electrochemical catalysis and other fields, while the single-layer TMDs film has the characteristics of valence band splitting and large valley polarizability, and has been widely studied in spintronics and valleytronics, and is considered to be a One of the key materials of the post-Moore era. The wide application of 2D layered transition metal dichalcogenides (TMDCs) materials urgently requires the development of reliable preparation methods...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/00C30B29/46C30B29/64C30B29/68
CPCC30B25/00C30B29/46C30B29/64C30B29/68Y02P70/50
Inventor 唐宁樊腾刘星辰张仕雄王奋陶孙真昊姜稼阳李国平
Owner PEKING UNIV
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