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Trans-solar cell preparation method based on seed crystal induced growth perovskite thin film

A solar cell and perovskite technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as transformation and poor crystallization quality of formamidinyl perovskite, reduce grain boundaries, and improve photoelectricity Conversion efficiency, the effect of suppressing the hysteresis phenomenon of positive and negative scanning

Pending Publication Date: 2022-06-21
ZHEJIANG UNIV
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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem of poor crystal quality of formamidinyl perovskite in the above-mentioned technical problems, and the problem that the α photovoltaic phase transition is prone to occur in the room temperature environment, thereby proposing a method based on seed crystal induced growth Preparation method of reverse solar cell with perovskite thin film

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  • Trans-solar cell preparation method based on seed crystal induced growth perovskite thin film
  • Trans-solar cell preparation method based on seed crystal induced growth perovskite thin film
  • Trans-solar cell preparation method based on seed crystal induced growth perovskite thin film

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preparation example Construction

[0031] The present invention first specifically describes a method for preparing a trans-solar cell based on a seed crystal-induced growth perovskite film, and the steps are as follows:

[0032] S1, the CsPbBr 3 Nanocrystals were dispersed in dimethyl sulfoxide solvent to obtain self-dispersing seed crystal solution, and lead iodide PbI 2 and formamidine iodide FAI dissolved in dimethylformamide DMF solution to obtain FAPbI without methylammonium component 3 Precursor solution, the FAPbI 3 The precursor solution is mixed with the self-dispersing seed crystal solution to form a seed crystal-containing perovskite precursor solution, which is left to stand for aging.

[0033] It should be noted that the CsPbBr of the present invention 3 Nanocrystals can be inorganic CsPb and PbBr 2 As a raw material, it is synthesized by a solution method or an anti-solvent capture method. The following provides a solution method to prepare CsPbBr 3 The method of nanocrystals is as follows:...

Embodiment 1

[0048] This embodiment provides a method for preparing a trans-solar cell based on seed crystal-induced growth of perovskite thin films, which utilizes self-dispersing seed crystal solutions to induce growth of methylammonium (MA)-free perovskite thin films, and is applied to trans-( p-i-n) structure perovskite solar cell, the preparation method specifically includes the following process steps:

[0049] 1) ITO substrate preparation:

[0050] The specifications used are light transmittance≥84%, square resistance≤15Ω, 15mm×15mm Sn-doped In 2 O 3 (ITO) conductive glass was used as the device substrate material, and the ITO substrate was subjected to ultraviolet ozone treatment for use.

[0051] 2) Preparation of hole transport layer:

[0052] Using polymer PTAA material as the hole transport layer material, spin coating on the ITO substrate after UV ozone treatment to form the hole transport layer.

[0053] 3) Preparation of light absorbing layer:

[0054] CsPbBr 3 Nanocry...

Embodiment 2

[0078] This embodiment provides a method for preparing a trans-solar cell based on seed crystal-induced growth of perovskite thin films, which utilizes self-dispersing seed crystal solutions to induce growth of methylammonium (MA)-free perovskite thin films, and is applied to trans-( p-i-n) structure perovskite solar cell, the preparation method specifically includes the following process steps:

[0079] 1) ITO substrate preparation:

[0080] The specifications used are light transmittance≥84%, square resistance≤15Ω, 15mm×15mm Sn-doped In 2 O 3 (ITO) conductive glass was used as the device substrate material, and the ITO substrate was subjected to ultraviolet ozone treatment for use.

[0081] 2) Preparation of hole transport layer:

[0082] Using the small molecular organic 2PACZ material as the hole transport layer material, the small molecular organic 2PACZ was dissolved in ethanol to form a solution with a concentration of 0.35 mmol / L, and the solution was spin-coated on...

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Abstract

The invention discloses a trans-solar cell preparation method based on seed crystal induced growth of a perovskite thin film. The chemical general formula of the seed crystal solution is CsPbBr3 / DMSO, the seed crystal solution contains self-dispersed CsPbBr3 small crystal lattices or seed crystals, and the seed crystal solution can be added into a perovskite precursor solution to prepare a perovskite thin film through seed crystal induced growth. According to the invention, a bottom-to-top crystal growth process of perovskite can be realized, and large-size through crystals are realized; the condition that an alpha photovoltaic phase of formamidino perovskite is easily converted into a delta phase in a room temperature environment is effectively inhibited, and a long-term stable perovskite thin film can be obtained. The invention also discloses a preparation method for preparing a trans (p-i-n) structured perovskite solar cell by using the seed crystal solution, the preparation method is compatible with a low-temperature annealing process in other functional layers, and the trans perovskite solar cell can be prepared at low temperature (less than or equal to 100 DEG C) in the whole process.

Description

technical field [0001] The invention belongs to the field of perovskite solar cells, and relates to inducing growth of a perovskite thin film through a seed crystal, and applying the same to the preparation of a trans-structured perovskite solar cell. Background technique [0002] As a new type of solar cell technology, perovskite solar cells have excellent optoelectronic properties, solution processability, and high defect state tolerance, fully demonstrating the advantages of low cell processing costs and large-scale production. However, in the development process of perovskite cells, the perovskite films prepared have been faced with poor quality, the hysteresis effect caused by the migration of methylammonium ions in the perovskite containing methylammonium (MA) component under the working bias and the device instability issues. Therefore, how to obtain formamidinium-based perovskite thin films with high crystallinity, low defects, no methylammonium, and controllable pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42C09K11/66C30B7/14C30B28/04C30B29/54C30B33/02B82Y20/00B82Y40/00
CPCC30B29/54C30B33/02C30B7/14C30B28/04C09K11/665B82Y20/00B82Y40/00H10K30/15Y02E10/549
Inventor 王鹏久杨旸
Owner ZHEJIANG UNIV
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