MOCVD (Metal Organic Chemical Vapor Deposition) equipment for ZnO film growth

Abstract

The invention discloses MOCVD (Metal Organic Chemical Vapor Deposition) equipment for ZnO film growth, which comprises a reaction chamber, a gas transportation system, a control system, a reaction processing system and a vibration reduction balance system, the reaction processing system comprises a spray gun device, a rotating assembly, a placing platform and a lifting mechanism, and the reaction chamber is provided with a temperature color-changing adhesive tape. The vibration reduction balance system comprises a vibration reduction assembly and a balance assembly. According to the invention, the temperature color-changing adhesive tape is arranged for directly feeding back the temperature change to an operator, so that the temperature condition of the MOCVD equipment can be conveniently and quickly known, and the temperature can be timely adjusted; the lifting mechanism is arranged to quickly adjust the height of the platform I, so that the MOCVD equipment can be used for placing and processing substrate materials with different thicknesses according to requirements, ZnO films with different thickness requirements can be produced, and the applicability is improved; and the vibration reduction balance system is arranged to provide a vibration reduction function and a horizontal correction function, so that the spraying balance and uniformity are improved, and the product quality is improved.

Description

technical field [0001] The invention relates to the technical field of the manufacture of ZnO thin films, in particular to a MOCVD equipment used for the growth of ZnO thin films. Background technique [0002] Zinc oxide (ZnO) material is another important wide-bandgap semiconductor material that is hotly researched in the world after gallium nitride (GaN). Its band gap and lattice constant are very close to GaN, with the same crystal form and similar optoelectronic properties. ZnO also has higher melting point and exciton binding energy, higher exciton gain, low epitaxial growth temperature, low cost, easy etching and convenient subsequent processing, etc. GaN has greater development potential. There are many methods for the growth of ZnO thin film materials, including evaporation, magnetron sputtering, ion beam sputtering, pulsed laser deposition (PLD), metal organic compound vapor deposition (MOCVD), molecular beam epitaxy (MBE) and so on. Sputtering is the most commonl...

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Problems solved by technology

But the MOCVD equipment of existing ZnO thin film growth runs into following difficult problem when growing ZnO thin film: 1. When the MOCVD equipment of existing ZnO thin film growth is used, a large amount of heat can be produced in it, and people need pass through The temperature of the device can only be known by physical touch, and the temperature cannot be immediately fed back to people through visual means. If the temperature is too high or too low, the internal components will be damaged, accidents are prone to occur, and there are certain safety hazards, and the temperature is unstable. Affect the production quality of ZnO thin film growth; 2. The existing equipment has no vibration-reducing balance function. When the equipment is used, it will generate vibration or external vibration will be transmitted to the equipment. Bottom) The uniformity of growth on the substrate affects the quality of ZnO film growth; 3. The gas mixing chamber of the existing MOCVD equipment usually uses a filter to filter, but the filtering effect of the filter is poor, and the gas mixing chamber may be mixed with dust Other impurities flow into the reaction chamber, which affects the reaction quality; 4. The platforms of existing MOCVD equipment are mostly fixed, and cannot be quickly adjusted according to the thickness requirements of the product. The applicability is low, and there is only one driving source. When the driving source fails , the platform cannot rotate normally, affecting subsequent production efficiency

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