Magnesium-based half Heusler alloy material and preparation method thereof

An alloy material, magnesium-based semi-technology, applied in the field of magnesium-based semi-Heusler alloy materials and their preparation, can solve the problems related to performance and data of undisclosed magnesium-based semi-Heusler alloy materials, and achieve abundant reserves and production Low cost and light weight effect

Active Publication Date: 2022-07-01
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] CN106170875A discloses a material for thermoelectric energy conversion, wherein the thermoelectric material of the module leg is a P-type semi-Heusler compound, including YNiSb, YNiBi, LaNiSb and LaNiBi, and exemplarily mentions the use of alkaline earth metal magnesium to replace Part of the yttrium or lanthanum component, but the relevant properties and data of the corresponding magnesium-based half-Heusler alloy materials have not been disclosed in the actual application process

Method used

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  • Magnesium-based half Heusler alloy material and preparation method thereof
  • Magnesium-based half Heusler alloy material and preparation method thereof
  • Magnesium-based half Heusler alloy material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The raw materials are stoichiometrically compared to Mg 0.5 Ti 0.5 After NiSb was calculated and weighed, it was fully mixed and placed in a tantalum tube protected by argon gas and sealed. The material was obtained by reacting at a high temperature of 1000 °C for 24 hours, and then the material was pulverized by mechanical ball milling to obtain material powder, and then the spark plasma sintering method was used at 920 °C. The final sample was obtained by sintering at 60 MPa for 10 min.

[0035] The phase analysis of the samples prepared in this example was carried out by using the Netherlands PANalytical (Aries DY866) X-ray polycrystalline diffractometer (XRD). figure 1 shown, and confirmed to be a half-Heusler alloy structure, namely a cubic structure (F4_3m), with a space group number of 216.

[0036] The thermoelectric coefficient S=97μV / K of the material at room temperature was measured by Linses LSR-3 equipment, indicating that the carrier type of the material...

Embodiment 2

[0039] The raw materials are stoichiometrically compared to Mg 0.4 Ti 0.6 After NiSb is calculated and weighed, it is fully mixed and placed in a tantalum tube protected by argon gas and sealed. The material is obtained by reacting at a high temperature of 1000 ° C for 24 hours, and then the material is pulverized by the mechanical ball milling method to obtain the material powder, and then the spark plasma sintering method is used at 900 ° C. The final sample was obtained by sintering at 60 MPa for 10 min.

[0040] Phase analysis of the samples prepared in this example was carried out by XRD, such as figure 1 shown and confirmed to be a half-Heusler alloy structure, namely a cubic structure (F43m), with space group number 216.

[0041] The thermoelectric coefficient S=-65μV / K of the material at room temperature was measured by Linses LSR-3 equipment, indicating that the carrier type of the material is hole (N-type), and the electrical conductivity σ=10.3×10 4 The relations...

Embodiment 3

[0044] The raw materials are stoichiometrically compared to Mg 0.6 Ti 0.4 After NiSb is calculated and weighed, it is fully mixed and placed in a tantalum tube protected by argon gas and sealed. The material is obtained by reacting at a high temperature of 1000 ° C for 24 hours, and then the material is pulverized by the mechanical ball milling method to obtain the material powder, and then the spark plasma sintering method is used at 900 ° C. The final sample was obtained by sintering at 60MPa for 5min.

[0045] Phase analysis of the samples prepared in this example was carried out by XRD, such as figure 1 shown, and confirmed to be a half-Heusler alloy structure, namely a cubic structure (F4_3m), with a space group number of 216.

[0046] The thermoelectric potential coefficient S=21μV / K of the material at room temperature was measured by Linses LSR-3 equipment, indicating that the carrier type of the material is hole (P-type), and the conductivity σ=30×10 4 The relations...

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Abstract

The invention relates to synthesis and preparation of new materials, and discloses a magnesium-based half Heusler alloy material and a preparation method thereof. The raw material composition is Mg (1-x) MxNiSb, M is Ti or Zr or Hf, and x represents atomic percent, 0 lt; xlt; 1. Magnesium, titanium, nickel and antimony are used as raw materials to react in an inert atmosphere, and then the magnesium-based half Heusler alloy is prepared through ball milling and sintering. According to the alloy material, N-type and P-type materials can be obtained at the same time only by adjusting the relative content of magnesium and M elements, which is beneficial to the application of the material in the thermoelectric field. The thermoelectric performance of the material can be regulated and controlled by regulating and controlling the material components, and under the condition that a certain component Mg0. 4Ti0. 6NiSb is not doped to regulate the carrier concentration, the highest thermoelectric figure of merit 0.367 is obtained at 874K.

Description

technical field [0001] The invention relates to a class of magnesium-based half-Heusler alloy materials and a preparation method thereof. Background technique [0002] Half-Heusler alloy materials are a large class of intermetallic compounds with a composition of XYZ and a crystallographic space group of 216, in which X, Y, and Z are all metal elements, and each element occupies a set of face-centered cubic sublattice. The sum of the outermost electrons of each element satisfies the 18-electron rule and is a class of semiconductor materials with narrow band gaps. [0003] Half-Heusler alloy materials exhibit excellent mechanical properties, good high-temperature thermal stability, and good thermoelectric transport properties, and have been extensively studied in the field of thermoelectric power generation. [0004] The thermoelectric effect can realize the direct mutual conversion of electrical energy and thermal energy through the movement of carriers (electrons or holes...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C12/00B22F1/142B22F3/14B22F9/04C22C1/04H01L35/20
CPCC22C12/00B22F3/14B22F9/04B22F2999/00C22C1/047H10N10/854B22F2202/06
Inventor 朱铁军李艾燃付晨光
Owner ZHEJIANG UNIV
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