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Silicon wafer, silicon wafer textured structure and preparation method of silicon wafer textured structure

A silicon wafer and suede technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of low fill factor, deformation of screen printing graphics, misalignment, etc., to overcome the low fill factor , It is beneficial to the printing alignment and the effect of increasing the surface area

Pending Publication Date: 2022-07-01
CSI CELLS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this process also cannot achieve high-concentration doping and low-concentration doping in partitions.
[0010] Moreover, when setting the electrodes in the high-concentration doped region, it is necessary to ensure the precise alignment of the electrode and the doped region, otherwise there will be defects such as inaccurate alignment between the electrode and the high-concentration doped region, and a low fill factor; and, as During the screen printing, the graphic screen of the screen printing will also be deformed, resulting in unavoidable misalignment defects

Method used

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  • Silicon wafer, silicon wafer textured structure and preparation method of silicon wafer textured structure

Examples

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Effect test

Embodiment 1

[0065] This embodiment provides a preparation method of a silicon wafer textured structure, and the preparation method includes the following steps:

[0066] (1) Under the condition of 70°C, the silicon wafer is subjected to anisotropic alkaline texturing treatment in alkaline solution for 400s, and the first silicon wafer is obtained after drying; in terms of mass percentage, the alkaline solution includes: 5% alkaline solution salt, 5% organic solvent, 5% tetramethylammonium hydroxide, 5% silicate, and the balance is water; the basic salt is potassium hydroxide, the organic solvent is isopropanol, so The silicate is sodium silicate;

[0067] (2) Screen-printing nanometer metal particle slurry in the electrode setting area of ​​the first silicon wafer obtained in step (1), and drying at 120° C. to obtain a second silicon wafer with a slurry layer thickness of 50 nm; The metal particle slurry is composed of water-soluble gold nanoparticles with a mass ratio of 70:3:20, an org...

Embodiment 2

[0071] This embodiment provides a preparation method of a silicon wafer textured structure, and the preparation method includes the following steps:

[0072] (1) Under the condition of 60°C, anisotropic alkali texturing treatment is performed on the silicon wafer in alkaline solution for 500s, and the first silicon wafer is obtained after drying; in terms of mass percentage, the alkaline solution includes: 3% alkaline solution salt, 3% organic solvent, 8% tetramethylammonium hydroxide, 8% silicate, the balance is water; the basic salt is sodium hydroxide, the organic solvent is absolute ethanol, so The silicate is potassium silicate;

[0073] (2) Screen-printing nanometer metal particle slurry in the electrode setting area of ​​the first silicon wafer obtained in step (1), and drying at 80°C to obtain a second silicon wafer with a slurry layer thickness of 40 nm; The metal particle slurry is composed of water-soluble nano silver particles with a mass ratio of 80:2:15, an orga...

Embodiment 3

[0077] This embodiment provides a preparation method of a silicon wafer textured structure, and the preparation method includes the following steps:

[0078] (1) Under the condition of 80°C, anisotropic alkali texturing treatment is performed on the silicon wafer in alkaline solution for 300s, and the first silicon wafer is obtained after drying; in terms of mass percentage, the alkaline solution includes: 8% alkaline Salt, 8% organic solvent, 3% tetramethylammonium hydroxide, 3% silicate, the balance is water; the basic salt is potassium hydroxide, the organic solvent is absolute ethanol, so The silicate is sodium silicate;

[0079](2) Screen-printing nano-metal particle paste in the electrode setting area of ​​the first silicon wafer obtained in step (1), and drying at 160° C. to obtain a second silicon wafer with a paste layer thickness of 80 nm; The metal particle slurry is composed of water-soluble nano-copper particles with a mass ratio of 60:4:25, an organic binder and...

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Abstract

The invention provides a silicon wafer, a silicon wafer textured structure and a preparation method thereof, and the preparation method comprises the following steps: (1) carrying out the anisotropic alkali texturing of the silicon wafer in an alkali solution, and drying the silicon wafer to obtain a first silicon wafer; (2) nano metal particle slurry is subjected to silk-screen printing in the electrode arrangement area of the first silicon wafer obtained in the step (1), and a second silicon wafer is obtained after drying; and (3) sequentially carrying out acid etching treatment and acid pickling treatment on the second silicon wafer obtained in the step (2), and drying to complete the preparation of the silicon wafer textured structure. The nano metal particles are arranged in the electrode arrangement area through silk-screen printing, then the nanoscale hole suede is obtained through acid etching treatment, high-concentration doping is conveniently achieved in the electrode arrangement area, and low-concentration doping is conveniently achieved in the non-electrode arrangement area; moreover, a screen printing plate used for silk-screen printing is the same as a screen printing plate used for arranging an electrode grid line, so that an electrode accurately corresponds to a high-concentration doped region, and the filling factor of the battery is ensured.

Description

technical field [0001] The invention belongs to the technical field of new energy, and relates to a method for processing silicon wafers, in particular to a silicon wafer, a textured structure of the silicon wafer and a preparation method thereof. Background technique [0002] Solar energy is sought after worldwide because of its cleanness, environmental protection and inexhaustible supply, and is considered to be the first of the most important new energy sources in the 21st century. In the field of solar photovoltaics, crystalline silicon solar cells have high conversion efficiency and simple sources of raw materials, and are still the main force in the solar cell industry. [0003] In traditional silicon solar cells, the diffusion concentration needs to be adapted to the requirements of the printed electrodes. Usually, the diffusion requires a higher doping concentration. At a higher doping concentration, the carrier recombination rate on the surface of the silicon wafer ...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0236
CPCH01L31/02363H01L31/1804
Inventor 叶晓亚周思洁曹芳邹帅王栩生
Owner CSI CELLS CO LTD
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