Metal oxide thin film transistor device, manufacturing method thereof and display panel

Abstract

The invention provides a metal oxide thin film transistor device, a manufacturing method thereof and a display panel, and relates to the technical field of semiconductors. A nitrogen-silicon layer, a grid electrode, a grid dielectric layer covering the grid electrode and a metal oxide layer at least covering the grid dielectric layer are prepared on one side of a substrate in sequence, so that a partial region, in contact with the nitrogen-silicon layer, in the metal oxide layer is subjected to diffusion doping through hydrogen or fluorine contained in the nitrogen-silicon layer to be subjected to conductor treatment, and a source region and a drain region are formed; the partial region, which is in contact with the gate dielectric layer and is not conducted, in the metal oxide layer is a semiconductor region communicated with the source region and the drain region, and the gate, the source region and the drain region are located on the surface of the same nitrogen-silicon layer. Therefore, the thin film transistor device can realize lower stray capacitance and higher working frequency upper limit through the extremely simple self-aligned bottom gate structure, has the characteristic of simple preparation process, and can be used for preparing a display panel with high image display quality at low cost.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and in particular, to a metal oxide thin film transistor device, a method for manufacturing the same, and a display panel. Background technique [0002] With the continuous development of science and technology, metal oxides such as amorphous indium gallium zinc oxide (a-IGZO), indium tin zinc oxide (ITZO) or rare earth doped indium zinc oxide (Ln-IZO), etc. ) as a channel material, a metal oxide thin film transistor (TFT) is widely used because of its high mobility, extremely small off-state current, large-area uniform preparation, good stability and compatibility with low-temperature processes. In the display panel, it is used to construct the switching element of the driving pixel unit of the display panel. [0003] For metal oxide thin film transistors, the overlapping area of ​​source / drain and gate is positively correlated with the parasitic capacitance of the metal oxide ...

AI Technical Summary

Problems solved by technology

[0004] At present, metal oxide thin film transistors on the market usually cannot effectively maintain a balance between the size of parasitic capacitance and the complexity of transistor fabrication, and the preparation of metal oxide thin film transistors with small parasitic capacitance often requires a more complicated process. The production cost of the display panel with the metal oxide thin film transistor backplane is relatively high

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