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PIN multipurpose diode with GaN/BGaN/GaN structure and preparation method thereof

A multi-purpose, diode technology, used in semiconductor/solid-state device manufacturing, coating, gaseous chemical plating, etc. The effect of reducing parasitic capacitance, reducing the concentration of two-dimensional electron gas, and efficiently modulating carrier lifetime

Pending Publication Date: 2022-08-02
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] refer to figure 1 , the current PIN microwave diodes are usually GaN (GaAs)-based diodes, in which the N-type layer 2 and P-type layer 4 are made of GaN (GaAs) materials, and there is a high concentration of two-dimensional electron gas at the AlGaN / GaN interface due to polarization. , which has a great impact on the carrier lifetime; while the polarization intensity at the BGaN / GaN heterojunction interface is very weak, so the two-dimensional electron gas concentration is also low; the intrinsic layer 3 is made of AlGaN (AlGaAs) material, and the AlGaN material It is difficult to control the carrier lifetime, and it is difficult to meet the multi-purpose requirements such as fast recovery and microwave switching

Method used

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  • PIN multipurpose diode with GaN/BGaN/GaN structure and preparation method thereof
  • PIN multipurpose diode with GaN/BGaN/GaN structure and preparation method thereof
  • PIN multipurpose diode with GaN/BGaN/GaN structure and preparation method thereof

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preparation example Construction

[0026] like figure 2 As shown, a preparation method of a PIN multi-purpose diode with a GaN / BGaN / GaN structure provided by the present invention includes:

[0027] Step 1: Obtain GaN substrate 1;

[0028] Step 2: growing an N-type layer 2 of Si-doped GaN on the GaN substrate 1 using an MOCVD process;

[0029] Among them, the thickness of the N-type layer 2 is 50-300 nm; the process conditions for growing the N-type layer of Si-doped GaN with a thickness of 200 nm are: temperature 1000 ° C, pressure 300 Torr, gallium source flow 100 sccm, Si source flow 50 sccm, ammonia flow 20000 sccm , the hydrogen flow rate is 40000sccm.

[0030] Step 3: growing a BGaN intrinsic layer 3 with adjustable B content on the N-type layer 2 of GaN using MOCVD process;

[0031] Wherein, the content of B is adjusted in the range of 10%-30%, and the thickness of the BGaN intrinsic layer 3 is 30-200 nm. The process conditions for the grown BGaN intrinsic layer 3 are: temperature 1000° C., pressure...

Embodiment 1

[0041] step 1, as image 3 As shown in the neutron diagram a, 200nm Si-doped GaN was grown on a GaN substrate by MOCVD process. The process conditions are: temperature 1000℃, pressure 300Torr, gallium source flow rate 100sccm, Si source flow rate 50sccm, ammonia gas flow rate 20000sccm, hydrogen gas flow rate Flow 40000sccm;

[0042] step 2, as image 3 As shown in neutron diagram b, a 100nm BGaN intrinsic layer was grown on the GaN N-type layer using MOCVD process, where the B content was 15%, and the process conditions were: temperature 1000°C, pressure 300Torr, gallium source flow 80sccm, B source flow 30sccm, ammonia flow 20000sccm, hydrogen flow 40000sccm

[0043] step 3, as image 3 As shown in neutron diagram c, 200nm Mg-doped GaN was grown on the BGaN intrinsic layer by MOCVD process. The process conditions were: temperature 1000℃, pressure 300Torr, gallium source flow rate 100sccm, Mg source flow rate 500sccm, ammonia gas flow rate 20000sccm, Hydrogen flow 40000sc...

Embodiment 2

[0048] step 1, as image 3 As shown in the neutron diagram a, 200nm Si-doped GaN was grown on a GaN substrate by MOCVD process. The process conditions are: temperature 1000℃, pressure 300Torr, gallium source flow rate 100sccm, Si source flow rate 50sccm, ammonia gas flow rate 20000sccm, hydrogen gas flow rate Flow 40000sccm;

[0049] step 2, as image 3 As shown in the neutron diagram b, a 100nm BGaN intrinsic layer was grown on the GaN N-type layer using the MOCVD process, where the B content was 20%, and the process conditions were: temperature 1000 ° C, pressure 300 Torr, gallium source flow 80sccm, B source flow 40sccm, ammonia flow 20000sccm, hydrogen flow 40000sccm

[0050] step 3, as image 3 As shown in neutron diagram c, 200nm Mg-doped GaN was grown on the BGaN intrinsic layer by MOCVD process. The process conditions were: temperature 1000℃, pressure 300Torr, gallium source flow rate 100sccm, Mg source flow rate 500sccm, ammonia gas flow rate 20000sccm, Hydrogen f...

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Abstract

According to the PIN multipurpose diode of the GaN / BGaN / GaN structure and the preparation method of the PIN multipurpose diode, the BGaN intrinsic layer 3 with the adjustable B content grows on the GaN N-type layer 2 through the MOCVD technology, the service life of carriers of the intrinsic layer is efficiently modulated, and the multiple requirements of fast recovery, microwave switches and the like are met. Meanwhile, the concentration of two-dimensional electron gas at the BGaN / GaN heterojunction is reduced, and the parasitic capacitance of the device can be reduced.

Description

Technical field [0001] The invention belongs to the field of semiconductor technology, and specifically relates to a PIN multi-purpose diode with a GaN / BGaN / GaN structure and a preparation method thereof. Background technique [0002] Semiconductor devices are indispensable devices in fields such as military radar and communications, and pin diodes, as the core devices, have received widespread attention. As a representative of the third generation semiconductor, GaN has broad application prospects in various new semiconductor devices due to its large bandgap, high dielectric constant and large electron mobility. PIN diodes have exerted their advantages of high frequency and high power in radio frequency and microwave applications. GaN-based PIN diodes have huge development potential in applications such as fast recovery, microwave switches, and microwave limiters. [0003] refer to figure 1 , Current PIN microwave diodes are usually GaN (GaAs)-based diodes, in which N-typ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/329H01L21/205H01L29/20H01L29/207H01L29/868C23C16/30
CPCH01L21/02389H01L21/0254H01L21/0262H01L21/02584H01L29/2003H01L29/207H01L29/66204H01L29/868C23C16/303
Inventor 朱家铎尚蔚许晟瑞党魁张金风张进成郝跃
Owner XIDIAN UNIV
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